2.2um BSI CMOS image sensor with two layer photo-detector

H. Sasaki; A. Mochizuki; Y. Sugiura; R. Hasumi; K. Eda; Y. Egawa; H. Yamashita; K. Honda; T. Ohguro; H. S. Momose; H. Ootani; Y. Toyoshima; T. Asami

doi:10.1117/12.2077122

13 March 2015 2.2um BSI CMOS image sensor with two layer photo-detector

H. Sasaki, A. Mochizuki, Y. Sugiura, R. Hasumi, K. Eda, Y. Egawa, H. Yamashita, K. Honda, T. Ohguro, H. S. Momose, H. Ootani, Y. Toyoshima, T. Asami

Author Affiliations +

Proceedings Volume 9403, Image Sensors and Imaging Systems 2015; 940302 (2015) https://doi.org/10.1117/12.2077122
Event: SPIE/IS&T Electronic Imaging, 2015, San Francisco, California, United States

Abstract

Back Side Illumination (BSI) CMOS image sensors with two-layer photo detectors (2LPDs) have been fabricated and evaluated. The test pixel array has green pixels (2.2um x 2.2um) and a magenta pixel (2.2um x 4.4um). The green pixel has a single-layer photo detector (1LPD). The magenta pixel has a 2LPD and a vertical charge transfer (VCT) path to contact a back side photo detector. The 2LPD and the VCT were implemented by high-energy ion implantation from the circuit side. Measured spectral response curves from the 2LPDs fitted well with those estimated based on light-absorption theory for Silicon detectors. Our measurement results show that the keys to realize the 2LPD in BSI are; (1) the reduction of crosstalk to the VCT from adjacent pixels and (2) controlling the backside photo detector thickness variance to reduce color signal variations.

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H. Sasaki, A. Mochizuki, Y. Sugiura, R. Hasumi, K. Eda, Y. Egawa, H. Yamashita, K. Honda, T. Ohguro, H. S. Momose, H. Ootani, Y. Toyoshima, and T. Asami "2.2um BSI CMOS image sensor with two layer photo-detector", Proc. SPIE 9403, Image Sensors and Imaging Systems 2015, 940302 (13 March 2015); https://doi.org/10.1117/12.2077122

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