IEICE Trans - Accurate Extraction of the Trap Depth from RTS Noise Data by Including Poly Depletion Effect and Surface Potential Variation in MOSFETs

Accurate Extraction of the Trap Depth from RTS Noise Data by Including Poly Depletion Effect and Surface Potential Variation in MOSFETs

Hochul LEE
Youngchang YOON
Seongjae CHO
Hyungcheol SHIN

Publication
IEICE TRANSACTIONS on Electronics   Vol.E90-C    No.5    pp.968-972
Publication Date: 2007/05/01
Online ISSN: 1745-1353
DOI: 10.1093/ietele/e90-c.5.968
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Ultra-Thin Gate Insulators
Keyword: 
trap depth,  RTN,  time constants,  poly gate depletion effect,  surface potential variation,  

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Summary: 
Accurate extraction of the trap position in the oxide in deep-submicron MOSFET by RTN measurement has been investigated both theoretically and experimentally. The conventional equation based on the ratio of emission time and capture time ignores two effects, that is, the poly gate depletion effect and surface potential variation in strong inversion regime. In this paper, by including both of the two effects, we have derived a new equation which gives us more accurate information of the trap depth from the interface and the trap energy. With experimental result, we compare the trap depth obtained from the new equation and that of the conventional method.