Design of Ultra-Low Power High-Q Single Ended Active Inductors for IF BPF of Receiver Frontend Using 130 nm BiCMOS Technology | Wireless Personal Communications Skip to main content
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Design of Ultra-Low Power High-Q Single Ended Active Inductors for IF BPF of Receiver Frontend Using 130 nm BiCMOS Technology

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Abstract

In this work, performance of conventional gyrator-C based active inductor is studied and two designs of single-ended active inductors based on modified gyrator-C topology employing SiGe HBTs are proposed using 130 nm BiCMOS technology which provides high quality factor with low-power consumption. The performance in terms of inductive bandwidth, S11, noise figure, quality factor and power consumption have been compared and the tradeoff between performance parameters are discussed. In the proposed work, first design of active inductor produces high value of inductive bandwidth (271 MHz–3.7 GHz) with moderate value of quality factor (437), whereas second design produces moderate range of inductive bandwidth (182 MHz–2.3 GHz) with high quality factor (6014). The proposed active inductors are used in second order LC band pass filter and the performance metrics of filter in terms of 1 dB compression point (− 18.88 and  − 18.55), IIP3 (− 14.68 and  − 9.02) and passband gain is investigated. The study suggests that proposed designs of active inductors are suitable candidate for high performance, low power RF applications with nearly 1 GHz bandwidth.

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References

  1. Ou, J. (2016). Design considerations of CMOS active inductor for low power applications. In IEEE Dallas Circuits and Systems Conference (pp. 1–4). IEEE, https://doi.org/10.1109/DCAS.2016.7791121

  2. Sy, C. H., Bosse, S., Barth, S., & Harison, S. R. (2015). Design of a differential diplexer based on integrated active inductors with 0.25 µm SiGeC process. In 2015 European Microwave Conference (EuMC) (pp. 893–896). IEEE, https://doi.org/10.1109/EuMC.2015.7345908

  3. Atef, M., & Abd-Elrahman, D. (2014). 2.5 Gbit/s compact transimpedance amplifier using active inductor in 130nm CMOS technology. In International Conference on Mixed Design of Integrated Circuits and Systems (pp. 103–107). IEEE, https://doi.org/10.1109/MIXDES.2014.6872165

  4. Ma, L., Wang, Z. G., Xu, J., & Amin, N. M. (2017). A high-linearity wideband common-gate LNA with a differential active inductor. IEEE Transactions on Circuits and Systems II: Express Briefs, 64(4), 402–406. https://doi.org/10.1109/TCSII.2016.2572201

    Article  Google Scholar 

  5. Kia, H. B., & A’ain, A. K. (2014). A wide tuning range voltage controlled oscillator with a high tunable active inductor. Wireless Personal Communications, 79(1), 31–41. https://doi.org/10.1007/s11277-014-1839-3

    Article  Google Scholar 

  6. Huang, G., & Kim, B.-S. (2008). Programmable active inductor-based wideband VCO/QVCO design. IET Microwaves, Antennas and Propagation, 2(8), 830–838. https://doi.org/10.1049/iet-map:20070340

    Article  Google Scholar 

  7. Ben Hammadi, A., Mhiri, M., Haddad, F., Saad, S., & Besbes, K. (2016). A 1.82–4.44 GHz reconfigurable bandpass filter based on tunable active inductor. In International Design and Test Workshop (Vol. 0, pp. 254–259). IEEE Computer Society. https://doi.org/10.1109/IDT.2016.7843050

  8. Xiao, H., Schaumann, R., Daasch, W. R., Wong, P. K., & Pejcinovic, B. (2004). A radio-frequency CMOS active inductor and its application in designing high-Q filters. In 2004 IEEE International Symposium on Circuits and Systems (pp. 197–200). IEEE. https://doi.org/10.1109/ISCAS.2004.1328974

  9. Krishnamurthy, S. V., El-Sankary, K., & El-Masry, E. (2010). Noise-cancelling CMOS active inductor and its application in RF band-pass filter design. International Journal of Microwave Science and Technology, 2010, 1–8. https://doi.org/10.1155/2010/980957

    Article  Google Scholar 

  10. Manjula, J., & Malarvizhi, S. (2014). Performance analysis of a low power low noise tunable band pass filter for multiband RF front end. Journal of Semiconductors, 35(3), 035001. https://doi.org/10.1088/1674-4926/35/3/035001

    Article  Google Scholar 

  11. Heydarzadeh, S., & Torkzadeh, P. (2013). 1 GHz CMOS band-pass filter design using an active inductor and capacitor. American Journal of Electrical and Electronic Engineering, 1(3), 37–41. https://doi.org/10.12691/ajeee-1-3-1

    Article  Google Scholar 

  12. Liang, K. H., Ho, C.-C., Kuo, C. W., & Chan, Y. J. (2005). CMOS RF band-pass filter design using the high quality active inductor. IEICE Transactions on Electronics, 88, 2372–2375. https://doi.org/10.1093/ietele/e88-c.12.2372

    Article  Google Scholar 

  13. Choi, Y. W., & Luong, H. C. (2001). A high-Q and wide-dynamic-range 70 MHz CMOS bandpass filter for wireless receivers. IEEE Transactions on Circuits and Systems II: Analog and Digital Signal Processing, 48(5), 433–440. https://doi.org/10.1109/82.938353

    Article  Google Scholar 

  14. Yue, Wu., Ding, X., Ismail, M., & Olsson, H. (2003). RF bandpass filter design based on CMOS active inductors. IEEE Transactions on Circuits and Systems II: Analog and Digital Signal Processing, 50(12), 942–949. https://doi.org/10.1109/TCSII.2003.820235

    Article  Google Scholar 

  15. Selvathi, D., & Pown, M. (2015). Design of Band Pass Filter using active inductor for RF receiver front-end. In International Conference on Communication and Network Technologies (Vol. 2015-March, pp. 296–301). IEEE, https://doi.org/10.1109/CNT.2014.7062773

  16. Sachan, D., Goswami, M., & Misra, P. K. (2018). A high-Q floating active inductor using 130 nm BiCMOS technology and its application in IF band pass filter. Analog Integrated Circuits and Signal Processing. https://doi.org/10.1007/s10470-018-1196-3

    Article  Google Scholar 

  17. Kostack, R., Naeini, A., Stockinger, H., Bronner, A., & Ellinger, F. (2017). A direct RF sampling receiver using continuous-time band-pass sigma-delta ADC with active inductor in CMOS. In IEEE MTT-S Latin America Microwave Conference (pp. 1–4). IEEE, https://doi.org/10.1109/LAMC.2016.7851261

  18. Li, C., Gong, F., & Wang, P. (2010). Analysis and design of a high-Q differential active inductor with wide tuning range. IET Circuits Devices and Systems, 4(6), 486. https://doi.org/10.1049/iet-cds.2010.0011

    Article  Google Scholar 

  19. Thanachayanont, A., & Payne, A. (1996). VHF CMOS integrated active inductor. Electronics Letters, 32(11), 999–1000. https://doi.org/10.1049/el:19960669

    Article  Google Scholar 

  20. Akbari-Dilmaghani, R., Payne, A., & Toumazou, C. (1998). High Q RF CMOS differential active inductor. Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems, 3, 157–160. https://doi.org/10.1109/icecs.1998.813957

    Article  Google Scholar 

  21. Thanachayanont, A. (2002). CMOS transistor-only active inductor for IF/RF applications. In International Conference on Industrial Technology (Vol. 2, pp. 1209–1212). IEEE, https://doi.org/10.1109/ICIT.2002.1189346

  22. Yuan, F. (2008). CMOS Active Inductors and Transformers. Springer. https://doi.org/10.1007/978-0-387-76479-5

    Book  Google Scholar 

  23. Hsiao, C.-C., Kuo, C.-W., Ho, C.-C., & Chan, Y.-J. (2002). Improved quality-factor of 0.18-um CMOS active inductor by a feedback resistance design. IEEE Microwave and Wireless Components Letters, 12(12), 467–469. https://doi.org/10.1109/LMWC.2002.805931

    Article  Google Scholar 

  24. Crols, J., & Steyaert, M. S. J. (1998). Low-IF topologies for high-performance analog front ends of fully integrated receivers. IEEE Transactions on Circuits and Systems II: Analog and Digital Signal Processing, 45(3), 269–282. https://doi.org/10.1109/82.664233

    Article  Google Scholar 

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  1. Department of Electronics and Communication Engineering, Indian Institute of Information Technology, Allahabad, India

    Divyesh Sachan, Manish Goswami & Prasanna Kumar Misra

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  1. Divyesh Sachan
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  2. Manish Goswami
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Sachan, D., Goswami, M. & Misra, P.K. Design of Ultra-Low Power High-Q Single Ended Active Inductors for IF BPF of Receiver Frontend Using 130 nm BiCMOS Technology. Wireless Pers Commun 120, 649–663 (2021). https://doi.org/10.1007/s11277-021-08483-3

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