STM Study on Adsorption Structures of Cs on the As-Terminated GaAs(001) (2×4) Surface by Alternating Supply of Cs and O2

Masayuki HIRAO; Daichi YAMANAKA; Takanori YAZAKI; Jun OSAKO; Hokuto IIJIMA; Takao SHIOKAWA; Hikota AKIMOTO; Takashi MEGURO

doi:10.1587/transele.E99.C.376

Special Section on Progress towards System Nanotechnology

STM Study on Adsorption Structures of Cs on the As-Terminated GaAs(001) (2×4) Surface by Alternating Supply of Cs and O₂

Masayuki HIRAO, Daichi YAMANAKA, Takanori YAZAKI, Jun OSAKO, Hokuto IIJIMA, Takao SHIOKAWA, Hikota AKIMOTO, Takashi MEGURO

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Keywords: work function, gallium arsenide, negative electron, affinity, photoemission, photocathode, scanning tunneling microscope

JOURNAL RESTRICTED ACCESS

2016 Volume E99.C Issue 3 Pages 376-380

DOI https://doi.org/10.1587/transele.E99.C.376

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Abstract

Negative electron affinity (NEA) surfaces can be formed by alternating supply of alkali metals (e.g. Cs, Rb, K) and oxygen on semiconductor surfaces. We have studied adsorption structures of Cs on an As-terminated (2×4) (001) GaAs surface using scanning tunneling microscopy (STM). We found that the initial adsorption of Cs atoms occurs around the step sites in the form of Cs clusters and that the size of clusters is reduced by successive exposure to O₂, indicating that As-terminated (2×4) surfaces are relatively stable compared to Ga-terminated surfaces and are not broken by the Cs clusters adsorption.

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