Abstract
In this study, we investigate heavy ion irradiation effects on commercial 650 V p-GaN normally-off HEMTs. Ge and Cl ions are used to irradiate the GaN devices in the experiments. Ge and Cl ion beam irradiation have little impact on the output characteristics of GaN devices. After heavy ion irradiation, the leakage currents between source and drain electrodes increase significantly under off-state, decreasing the breakdown voltage (BVDS) sharply. Additionally, Ge and Cl ion irradiation have little effect on the trap states under the gate electrode; thus, the gate leakage currents increase slightly. Many line-shaped crystal defects extending from the surface to the GaN buffer layer can be captured using a transmission electron microscope after Ge/Cl ion irradiation. The buffer layers of the irradiated devices were damaged, and the leakage path was generated in the buffer layer. Defect percolation process in buffer layer is the dominant factor of irradiated high-voltage GaN device failure.
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Acknowledgements
This work was supported by the National Natural Science Foundation of China (Grant No. 62074122). Key-Area Research and Development Program of Guangdong Province (Grant No. 2020B010174001), and National Key Science and Technology Special Project (Grant No. 2019ZX01001101-010).
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Wu, Y., Zhang, J., Zhao, S. et al. Investigation of heavy ion irradiation effects on 650-V p-GaN normally-off HEMTs. Sci. China Inf. Sci. 65, 182404 (2022). https://doi.org/10.1007/s11432-021-3305-2
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DOI: https://doi.org/10.1007/s11432-021-3305-2