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A 143.2–168.8-GHz signal source with 5.6 dBm peak output power in a 130-nm SiGe BiCMOS process

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Acknowledgements

This work was supported by National Natural Science Foundation of China (Grant Nos. 61701114, 61941103), National Key Research and Development Program (Grant No. 2018YFB1801602), Scientific Research Foundation of Graduate School of Southeast University (Grant No. YBJJ1811), and China Scholarship Council (CSC).

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Authors and Affiliations

  1. State Key Laboratory of Millimeter Waves, Southeast University, Nanjing, 210096, China

    Peigen Zhou, Jixin Chen, Pinpin Yan, Zhigang Peng, Debin Hou, Zhe Chen & Wei Hong

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  1. Peigen Zhou
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  2. Jixin Chen
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  3. Pinpin Yan
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  4. Zhigang Peng
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  5. Debin Hou
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  6. Zhe Chen
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  7. Wei Hong
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Corresponding authors

Correspondence to Jixin Chen or Pinpin Yan.

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Zhou, P., Chen, J., Yan, P. et al. A 143.2–168.8-GHz signal source with 5.6 dBm peak output power in a 130-nm SiGe BiCMOS process. Sci. China Inf. Sci. 63, 229402 (2020). https://doi.org/10.1007/s11432-019-2732-1

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  • DOI: https://doi.org/10.1007/s11432-019-2732-1

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