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A Q-band CMOS LNA exploiting transformer feedback and noise-cancelling

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Abstract

In this paper, a Q-band CMOS low noise amplifier (LNA) exploiting transformer positive-negative feedback and noise cancelling is presented. The proposed low noise amplifier consists of a positive transformer feedback to achieve noise-reduction and a negative transformer feedback to obtain high reverse isolation and stability. The noise cancellation technique is applied in this LNA to achieve a low noise figure. This LNA has been fabricated by standard commercial 90 nm CMOS. According to measurements, this proposed LNA achieves a peak gain of 11.5 dB, a noise figure of 6.5 dB and an input P1dB of −12 dBm. It consumes 11.5 mA from a 1.2 V supply occupying the area of 0.6×0.7 mm2.

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Authors and Affiliations

  1. School of Economic Information Engineering, Southwestern University of Finance and Economics, Chengdu, 611130, China

    Jing Wu

  2. School of Electronic Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, China

    ZhengDong Jiang, Kai Yi, Kai Kang, YiMing Yu & Le-Wei Joshua Li

  3. State Key Laboratory of Millimeter Waves, Southeast University, Nanjing, 211189, China

    JiXin Chen

  4. Institute of Microelectronics, Tsinghua University, Beijing, 100084, China

    Lei Zhang

  5. Key Laboratory of RF Circuits and Systems, Hangzhou Dianzi University, Hangzhou, 310018, China

    Jun Liu

Authors
  1. Jing Wu
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  2. ZhengDong Jiang
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  3. Kai Yi
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  4. Kai Kang
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  5. YiMing Yu
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  6. JiXin Chen
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  7. Lei Zhang
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  8. Jun Liu
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  9. Le-Wei Joshua Li
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Corresponding author

Correspondence to Kai Kang.

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Wu, J., Jiang, Z., Yi, K. et al. A Q-band CMOS LNA exploiting transformer feedback and noise-cancelling. Sci. China Inf. Sci. 58, 1–10 (2015). https://doi.org/10.1007/s11432-014-5249-7

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  • DOI: https://doi.org/10.1007/s11432-014-5249-7

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