Abstract
A novel built-in voltage sensor circuit has been developed in 90-nm CMOS technology to characterize temporal and physical locations of ion hits. The sensing circuit only has 8 transistors, with very small area and power overhead. Simulations and laser experimental results illustrate the effectiveness of the sensing circuit. The sensors can be implemented in grid formation to systematically detect the ion hits in real time.
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Acknowledgment
The authors would like to thank CMC Microsystems for providing the EDA tools and fabrication services.
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Responsible Editor: K. Saluja
This work was supported in part by Natural Sciences and Engineering Research Council (NSERC), DTRA, CMC Microsystems Inc., and Cisco Systems Inc.
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Zhang, Z., Ren, Y., Chen, L. et al. A Bulk Built-In Voltage Sensor to Detect Physical Location of Single-Event Transients. J Electron Test 29, 249–253 (2013). https://doi.org/10.1007/s10836-013-5364-1
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DOI: https://doi.org/10.1007/s10836-013-5364-1