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Modeling long term memory effects in microwave power amplifiers for system level simulations

Modélisation des Effets de Mémoire à Long Terme Dans les Amplificateurs de Puissance Microondes Pour la Simulation Système

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Abstract

Accurate and dynamic behavioral models of SSPAS become of prime importance in system level analysis and design of modern communication and detection systems. This paper describes a new method to characterize and reproduce nonlinear memory effects in behavioral models ofSspas. We highlight, in a first section, the detailed mathematical development, whose the starting point is the Volterra series expansion, and ends to the nonlinear impulse response notion. The new model extraction relies on envelope transient simulations or time-domain measurements of complex envelopes at externDut reference accesses. This modeling technique is simple and enables a good prediction of nonlinear memory effects and especially long term memory effects and nonlinear transient behaviors. Simulations and measurements based extractions of this model are presented through significant amplifier examples.

Résumé

Les modèles comportementaux dynamiques précis d’amplificateurs de puissance deviennent de première importance dans l’analyse et la conception de systèmes de détection et de communication modernes. Ce papier décrit une nouvelle méthode pour caractériser et reproduire les effets de mémoire non linéaires dans les amplificateurs de puissance. Nous présentons dans une première section un développement mathématique détaillé dont le point de départ est le développement en séries de Volterra et qui se conclut par la notion de réponse impulsionnelle non linéaire. L’extraction du nouveau modèle repose sur des simulations en transitoire d’enveloppe ou des mesures dans le domaine temporel des enveloppes complexes présentes aux accès du dispositif sous test (Dst). Cette technique de modélisation est simple et permet une bonne prédiction des effets de mémoire non linéaires et notamment des effets de mémoire à long terme et des comportements transitoires non linéaires. Des extractions de ce modèle basées sur des simulations et des mesures expérimentales sont présentées aux travers d’exemples d’amplificateurs significatifs.

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  1. IRCOM-CNRS Institute, University of Limoges, 123 av. Albert Thomas, 87060, Limoges, France

    Arnaud Soury & Edouard Ngoya

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  1. Arnaud Soury
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  2. Edouard Ngoya
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Soury, A., Ngoya, E. Modeling long term memory effects in microwave power amplifiers for system level simulations. Ann. Télécommun. 60, 1488–1506 (2005). https://doi.org/10.1007/BF03219859

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