Abstract
TCAD simulation of electronic device has always been the basic approach to understand solid state electronics and to frame road-map for the evolution of future technology. Design of devices on these materials require better understanding of the physical insights to the internals of the device structure. In such a scenario, TCAD tool can help to visualize internal dynamics of carriers and fields in the device structure, thus helping to improve them further. Device structures are evolving continuously leading to an increase in complexity of computation of simulation. There is an increasing challenge to these simulators to improvise compact device models, whereby generating precise results. The responsibility of TCAD designers is ever increasing to develop improved solvers featuring better predictive capabilities. In this work, an effort has been made to compare the performance of an FEM based proposed simulator with conventional available device simulator. A simple pn junction diode is designed in both the simulators and a comparison of different electrical properties has been done by incorporating similar models and exactly same material parameters.
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Ray, A., Kumar, G., Bordoloi, S., Sinha, D.K., Agarwal, P., Trivedi, G. (2017). FEM Based Device Simulator for High Voltage Devices. In: Kaushik, B., Dasgupta, S., Singh, V. (eds) VLSI Design and Test. VDAT 2017. Communications in Computer and Information Science, vol 711. Springer, Singapore. https://doi.org/10.1007/978-981-10-7470-7_14
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DOI: https://doi.org/10.1007/978-981-10-7470-7_14
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