Abstract
This paper presents a novel sense amplifier for Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM), named Separated Pre-discharging Sense Amplifier (SPDSA). By inverting the pre-charging path of Separated Pre-charging Sense Amplifier (SPCSA) to a pre-discharging path, a couple of inverters that used to transfer the voltage can be eliminated, and thus the area overhead of SPCSA is reduced. We develop a compact magnetoresistance model for MTJ to perform hybrid CMOS/magnetic HSPICE simulations. Based on 45 nm CMOS technology, simulation results exhibit that compared with SPCSA, SPDSA can reduce the power consumption by 35.6% and improve the read reliability by 29%.
This work is supported by the Research and Development of Supercomputer Processors (2015ZX01028-101).
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Similar content being viewed by others
References
Ryu, J.W., Kwon, K.W.: A reliable 2T2MTJ nonvolatile static gain cell STT-MRAM with self-referencing sensing circuits for embedded memory application. IEEE Trans. Magn. 52, 1–10 (2016)
Kang, W., Zhang, L., Zhao, W., Klein, J.-O., Zhang, Y., Ravelosona, D., Chappert, C.: Yield and reliability improvement techniques for emerging nonvolatile STT-MRAM. IEEE J. Emerg. Sel. Top. Circ. Syst. 5, 28–39 (2015)
Lee, H., Alzate, J.G., Dorrance, R., Cai, X.Q., Markovic, D., Amiri, P.K., Wang, K.L.: Design of a fast and low-power sense amplifier and writing circuit for high-speed MRAM. IEEE Trans. Magn. 51, 1–7 (2015)
Kang, W., Zhang, L., Klein, J.-O., Zhang, Y., Ravelosona, D., Zhao, W.: Reconfigurable codesign of STT-MRAM under process variations in deeply scaled technology. IEEE Trans. Electron. Devices. 62, 1769–1777 (2015)
Zhao, W., Chappert, C., Javerliac, V., Noziere, J.-P.: High speed, high stability and low power sensing amplifier for MTJ/CMOS hybrid logic circuits. IEEE Trans. Magn. 45, 3784–3787 (2009)
Kang, W., Deng, E., Klein, J.-O., Zhang, Y., Zhang, Y., Chappert, C., Ravelosona, D., Zhao, W.: Separated precharge sensing amplifier for deep submicrometer MTJ/CMOS hybrid logic circuits. IEEE Trans. Magn. 50, 1–5 (2014)
Umeki, Y., Yanagida, K., Yoshimoto, S., Izumi, S., Yoshimoto, M., Kawaguchi, H., Tsunoda, K., Sugii, T.: A 0.38-V operating STT-MRAM with process variation tolerant sense amplifier. In: 9th IEEE Asian Solid-State Circuits Conference (A-SSCC), Singapore, pp. 249–252. IEEE (2013)
Author information
Authors and Affiliations
Corresponding author
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2016 Springer Nature Singapore Pte Ltd.
About this paper
Cite this paper
Li, H., Zhao, Z., Deng, Q., Li, P., Tang, H., Qu, L. (2016). A Novel Separated Pre-discharging Sense Amplifier for STT-MRAM. In: Xu, W., Xiao, L., Li, J., Zhang, C., Zhu, Z. (eds) Computer Engineering and Technology. NCCET 2016. Communications in Computer and Information Science, vol 666. Springer, Singapore. https://doi.org/10.1007/978-981-10-3159-5_20
Download citation
DOI: https://doi.org/10.1007/978-981-10-3159-5_20
Published:
Publisher Name: Springer, Singapore
Print ISBN: 978-981-10-3158-8
Online ISBN: 978-981-10-3159-5
eBook Packages: Computer ScienceComputer Science (R0)
