Abstract
In this paper, a 15.5 W Si-LDMOS balanced power amplifier (PA) technique operating in the 2.620–2.690 GHz frequency band for LTE systems is presented. The amplifier was designed using large signal Si-LDMOS models, which demonstrated saturation P1dB of 41 dBm and 53% PAE. The AM-AM and AM-PM measured data of the balanced amplifier is extracted and embedded in the device under test (DUT) based on IEEE 802.16 OFDM WLAN Transceiver system. A simple linear model was design for behavioral modelling of memory-less baseband digital pre-distorter. The nonlinearity of the balanced amplifier has been compensated using the Simulink version R2011a.
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This work was partially supported by Yorkshire Innovation Fund, Research Development Project (RDP) from United Kingdom; and Nigerian Communications Commission, Abuja, Nigeria.
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Mohammed, B.A. et al. (2017). A 15.5 W Si-LDMOS Balanced Power Amplifier with 53% Ultimate PAE for High Speed LTE. In: Otung, I., Pillai, P., Eleftherakis, G., Giambene, G. (eds) Wireless and Satellite Systems. WiSATS 2016. Lecture Notes of the Institute for Computer Sciences, Social Informatics and Telecommunications Engineering, vol 186. Springer, Cham. https://doi.org/10.1007/978-3-319-53850-1_19
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DOI: https://doi.org/10.1007/978-3-319-53850-1_19
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