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ORCIDEddy Simoen
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2020 – today
- 2021
[j21]Carlos H. S. Coelho
, João Antonio Martino, Marcello Bellodi, Eddy Simoen, Anabela Veloso, Paula Ghedini Der Agopian:
Analysis of zero-temperature coefficient behavior on vertically stacked double nanosheet nMOS devices. Microelectron. J. 117: 105277 (2021)- [c7]Hao Chang, Longda Zhou, Hong Yang, Zhigang Ji, Qianqian Liu, Eddy Simoen, Huaxiang Yin, Wenwu Wang:
Comparative Study on the Energy Distribution of Defects under HCD and NBTI in Short Channel p-FinFETs. IRPS 2021: 1-5 - [c6]Abhitosh Vais, Brent Hsu, Olga Syshchyk, Hao Yu, AliReza Alian, Yves Mols, Komal Vondkar Kodandarama, Bernardette Kunert, Niamh Waldron, Eddy Simoen, Nadine Collaert:
A defect characterization technique for the sidewall surface of Nano-ridge and Nanowire based Logic and RF technologies. IRPS 2021: 1-5 - [c5]Longda Zhou, Zhaohao Zhang, Hong Yang, Zhigang Ji, Qianqian Liu, Qingzhu Zhang, Eddy Simoen, Huaxiang Yin, Jun Luo, Anyan Du, Chao Zhao, Wenwu Wang:
A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps Under DC/ AC NBTI Stress/Recovery Condition in Si p-FinFETs. IRPS 2021: 1-7
2010 – 2019
- 2019
- [j20]Prabhat Kumar Dubey, Brajesh Kumar Kaushik, Eddy Simoen:
Analytical modelling and device design optimisation of epitaxial layer-based III-V tunnel FET. IET Circuits Devices Syst. 13(6): 763-770 (2019) - [c4]Eddy Simoen, Alberto Vinicius Oliveira, Anabela Veloso, Adrian Vaisman Chasin, Romain Ritzenthaler, Hans Mertens, Naoto Horiguchi, Cor Claeys:
Impact of Device Architecture and Gate Stack Processing on the Low-Frequency Noise of Silicon Nanowire Transistors. ASICON 2019: 1-4 - 2014
- [j19]Maria Glória Caño de Andrade, João Antonio Martino, Marc Aoulaiche, Nadine Collaert, Eddy Simoen, Cor Claeys:
Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation. Microelectron. Reliab. 54(11): 2349-2354 (2014) - 2013
- [j18]N. Lukyanchikova, N. Garbar, Valeriya Kudina, A. Smolanka, Eddy Simoen, Cor Claeys:
Drain currents and their excess noise in triple gate bulk p-channel FinFETs of different geometry. Microelectron. Reliab. 53(3): 394-399 (2013) - [c3]Marc Aoulaiche, Eddy Simoen, Romain Ritzenthaler, Tom Schram, Hiroaki Arimura, Moonju Cho, Thomas Kauerauf, Guido Groeseneken, Naoto Horiguchi, Aaron Thean, Antonio Federico, Felice Crupi, Alessio Spessot, Christian Caillat, Pierre Fazan, Hyuokju Na, Y. Son, K. B. Noh:
Impact of Al2O3 position on performances and reliability in high-k metal gated DRAM periphery transistors. ESSDERC 2013: 190-193 - 2012
- [j17]Valeria Kilchytska, Joaquín Alvarado, S. Put, Nadine Collaert, Eddy Simoen, Cor Claeys, Otilia Militaru, Guy Berger, Denis Flandre:
High-energy neutrons effect on strained and non-strained SOI MuGFETs and planar MOSFETs. Microelectron. Reliab. 52(1): 118-123 (2012) - [j16]Renan Trevisoli Doria, João Antonio Martino, Eddy Simoen, Cor Claeys, Marcelo Antonio Pavanello:
An analytic method to compute the stress dependence on the dimensions and its influence in the characteristics of triple gate devices. Microelectron. Reliab. 52(3): 519-524 (2012) - [j15]Nuria Ayala, Javier Martín-Martínez, Rosana Rodríguez, M. B. González, Montserrat Nafría, Xavier Aymerich, Eddy Simoen:
Characterization and SPICE modeling of the CHC related time-dependent variability in strained and unstrained pMOSFETs. Microelectron. Reliab. 52(9-10): 1924-1927 (2012) - [c2]Tommaso Romeo, Luigi Pantisano, Eddy Simoen, Raymond Krom, Mitsuhiro Togo, N. Horiguchi, Jérôme Mitard, Aaron Thean, Guido Groeseneken, Cor Claeys, Felice Crupi:
Low-frequency noise assessment of the transport mechanisms in SiGe channel bulk FinFETs. ESSDERC 2012: 330-333 - [c1]Eddy Simoen, Marc Aoulaiche, Anabela Veloso, M. Jurczak, Cor Claeys, L. Mendes Almeida, Maria Glória Caño de Andrade, A. Luque Rodriguez, J. A. Jimenez Tejada, Christian Caillat, Pierre Fazan:
On the correlation between the retention time of FBRAM and the low-frequency noise of UTBOX SOI nMOSFETs. ESSDERC 2012: 338-341 - 2010
- [j14]Javier Martín-Martínez, Esteve Amat, M. B. González, P. Verheyen, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, Eddy Simoen:
SPICE modelling of hot-carrier degradation in Si1-xGex S/D and HfSiON based pMOS transistors. Microelectron. Reliab. 50(9-11): 1263-1266 (2010)
2000 – 2009
- 2007
- [j13]Paula Ghedini Der Agopian, João Antonio Martino, Eddy Simoen, Cor Claeys:
Study of the linear kink effect in PD SOI nMOSFETs. Microelectron. J. 38(1): 114-119 (2007) - [j12]Paolo Srinivasan, Felice Crupi, Eddy Simoen, Paolo Magnone, Calogero Pace, Durga Misra, Cor Claeys:
Interfacial layer quality effects on low-frequency noise (1/f) in p-MOSFETs with advanced gate stacks. Microelectron. Reliab. 47(4-5): 501-504 (2007) - [j11]Kerem Akarvardar, Abdelkarim Mercha, Eddy Simoen, Vaidyanathan Subramanian, Cor Claeys, Pierre Gentil, Sorin Cristoloveanu:
High-temperature performance of state-of-the-art triple-gate transistors. Microelectron. Reliab. 47(12): 2065-2069 (2007) - 2006
- [j10]Paula Ghedini Der Agopian, João Antonio Martino, Eddy Simoen, Cor Claeys:
Impact of the twin-gate structure on the linear kink effect in PD SOI nMOSFETS. Microelectron. J. 37(8): 681-685 (2006) - [j9]L. M. Camillo, João Antonio Martino, Eddy Simoen, Cor Claeys:
The temperature mobility degradation influence on the zero temperature coefficient of partially and fully depleted SOI MOSFETs. Microelectron. J. 37(9): 952-957 (2006) - [j8]Joan Marc Rafí, Eddy Simoen, Kiyoteru Hayama, Abdelkarim Mercha, Francesca Campabadal, Hidenori Ohyama, Cor Claeys:
Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs. Microelectron. Reliab. 46(9-11): 1657-1663 (2006) - [j7]Kiyoteru Hayama, Kenichiro Takakura, K. Shigaki, Hidenori Ohyama, Joan Marc Rafí, Abdelkarim Mercha, Eddy Simoen, Cor Claeys:
Impact on the back gate degradation in partially depleted SOI n-MOSFETs by 2-MeV electron irradiation. Microelectron. Reliab. 46(9-11): 1731-1735 (2006) - 2005
- [j6]Kiyoteru Hayama, Kenichiro Takakura, Hidenori Ohyama, S. Kuboyama, S. Matsuda, Joan Marc Rafí, Abdelkarim Mercha, Eddy Simoen, Cor Claeys:
Radiation source dependence of performance degradation in thin gate oxide fully-depleted SOI n-MOSFETs. Microelectron. Reliab. 45(9-11): 1376-1381 (2005) - 2004
- [j5]Kiyoteru Hayama, Kenichiro Takakura, Hidenori Ohyama, Abdelkarim Mercha, Eddy Simoen, Cor Claeys, Joan Marc Rafí, Michael Kokkoris:
Degradation of electrical performance and floating body effect in ultra thin gate oxide FD-SOI n-MOSFETs by 7.5-MeV proton irradiation. Microelectron. Reliab. 44(9-11): 1721-1726 (2004) - 2001
- [j4]Hidenori Ohyama, Eddy Simoen, S. Kuroda, Cor Claeys, Y. Takami, T. Hakata, K. Kobayashi, M. Nakabayashi, Hiromi Sunaga:
Degradation and recovery of AlGaAs/GaAs p-HEMT irradiated by high-energy particle. Microelectron. Reliab. 41(1): 79-85 (2001) - [j3]M. Nakabayashi, Hidenori Ohyama, Eddy Simoen, M. Ikegami, Cor Claeys, K. Kobayashi, M. Yoneoka, K. Miyahara:
Reliability of polycrystalline silicon thin film resistors. Microelectron. Reliab. 41(9-10): 1341-1346 (2001) - [j2]Hidenori Ohyama, M. Nakabayashi, Eddy Simoen, Cor Claeys, T. Tanaka, T. Hirao, S. Onada, K. Kobayashi:
Radiation damages of polycrystalline silicon films and npn Si transistors by high-energy particle irradiation. Microelectron. Reliab. 41(9-10): 1443-1448 (2001) - [j1]M. Da Rold, Eddy Simoen, Sofie Mertens, Marc Schaekers, G. Badenes, Stefaan Decoutere:
Impact of gate oxide nitridation process on 1/f noise in 0.18 mum CMOS. Microelectron. Reliab. 41(12): 1933-1938 (2001)
Coauthor Index
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