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ORCIDM. Rafik
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2020 – today
- 2022
[c8]M. Arabi, X. Federspiel, Florian Cacho, M. Rafik, S. Blonkowski, Xavier Garros, G. Guibaudo:
Frequency dependant gate oxide TDDB model. IRPS 2022: 25-1
2010 – 2019
- 2019
- [c7]Cheikh Diouf, N. Guitard, M. Rafik, J. J. Martinez, X. Federspiel, Alain Bravaix
, D. Muller, David Roy:
Process Optimization for HCI Improvement in I/O Analog Devices. IRPS 2019: 1-6 - [c6]A. P. Nguyen, Xavier Garros, M. Rafik, Florian Cacho, David Roy, Xavier Federspiel, Fred Gaillard:
Impact of Passive & Active Load Gate Impedance on Breakdown Hardness in 28nm FDSOI Technology. IRPS 2019: 1-5 - 2018
- [j4]D. Nouguier, X. Federspiel, Gérard Ghibaudo, M. Rafik, David Roy:
New NBTI models for degradation and relaxation kinetics valid over extended temperature and stress/recovery ranges. Microelectron. Reliab. 87: 106-112 (2018) - [c5]M. Arabi, A. Cros, X. Federspiel, Cheikh Ndiaye, Vincent Huard, M. Rafik:
Modeling self-heating effects in advanced CMOS nodes. IRPS 2018: 3-1 - [c4]M. Rafik, A. P. Nguyen, Xavier Garros, M. Arabi, X. Federspiel, Cheikh Diouf:
AC TDDB extensive study for an enlargement of its impact and benefit on circuit lifetime assessment. IRPS 2018: 4 - [c3]Xavier Garros, Alexandre Subirats, Gilles Reimbold, Fred Gaillard, Cheikh Diouf, X. Federspiel, Vincent Huard, M. Rafik:
A new method for quickly evaluating reversible and permanent components of the BTI degradation. IRPS 2018: 6-1 - 2015
- [c2]Guillaume Besnard, Xavier Garros, Alexandre Subirats, François Andrieu, X. Federspiel, M. Rafik, Walter Schwarzenbach, Gilles Reimbold, Olivier Faynot, Sorin Cristoloveanu:
Performance and reliability of strained SOI transistors for advanced planar FDSOI technology. IRPS 2015: 2 - [c1]A. Bezza, M. Rafik, David Roy, X. Federspiel, P. Mora, Cheikh Diouf, Vincent Huard, Gérard Ghibaudo:
Physical understanding of low frequency degradation of NMOS TDDB in High-k metal gate stack-based technology. Implication on lifetime assessment. IRPS 2015: 5 - 2011
- [j3]Franck Arnaud, L. Pinzelli, C. Gallon, M. Rafik, P. Mora, Frédéric Boeuf:
Challenges and opportunity in performance, variability and reliability in sub-45 nm CMOS technologies. Microelectron. Reliab. 51(9-11): 1508-1514 (2011) - 2010
- [j2]L. Gerrer, M. Rafik, G. Ribes, Gérard Ghibaudo, E. Vincent:
Unified soft breakdown MOSFETs compact model: From experiments to circuit simulation. Microelectron. Reliab. 50(9-11): 1259-1262 (2010)
2000 – 2009
- 2009
- [j1]Xavier Garros, Mikaël Cassé, M. Rafik, Claire Fenouillet-Béranger, Gilles Reimbold, François Martin, Claudia Wiemer, F. Boulanger:
Process dependence of BTI reliability in advanced HK MG stacks. Microelectron. Reliab. 49(9-11): 982-988 (2009)
Coauthor Index
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