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ORCIDMing Qiao
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- Qiao Ming Lin
- Qiao-ming Pan
- Qiao Ming Peng
- Ming-Yang Qiao
- Qiaoming Zhu (aka: Qiao-Ming Zhu)
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2020 – today
- 2024
[j9]Yixun Jiang
, Qingfeng Kong, Ming Qiao, Yin Guo, Yuxi Tang, Xinxin Liu, Sen Zhang, Bo Zhang:
A novel SPICE model of shorted-anode lateral insulated-gate bipolar transistor. Microelectron. J. 150: 106268 (2024)- 2023
- [j8]Yixun Jiang, Ming Qiao, Yin Guo, Zuquan Zheng, Lijun Shen, Xinxin Liu, Sen Zhang, Zhaoji Li, Bo Zhang:
A physics-based compact model of shield gate trench MOSFET. Microelectron. J. 131: 105669 (2023) - [j7]Dong Fang, Wenliang Liu, Ming Qiao, Xingrui Long, Zhao Qi, Bo Zhang:
An ultralow specific on-resistance bidirectional trench power MOSFET with RESURF stepped oxide. Microelectron. J. 132: 105693 (2023) - 2022
- [j6]Dong Fang, Guang Yang, Ming Qiao, Kui Xiao, Xiangyu Yang, Zheng Bian, Bo Zhang:
Split-gate trench metal-oxide-semiconductor field effect transistor with an inverted L-shaped source region. Microelectron. J. 130: 105616 (2022) - [j5]Ming Qiao, Tao Ma, Shida Dong, Zhengkang Wang, Shuhao Zhang, Zhaoji Li, Bo Zhang:
A low gate charge field-plate trench MOSFET with hollow split gate structure. Microelectron. J. 130: 105627 (2022) - [c3]Langtao Chen, Xin Zhou, Ying Wang, Ying Kong, Rubin Xie, Ling Peng, Yantu Mo, Ming Qiao, Bo Zhang:
Study on Single Event Burnout Effect for 18V LDMOS Based on 0.18µm Process Technology. APCCAS 2022: 588-591 - 2021
- [j4]Zhengkang Wang, Ming Qiao, Zhaoji Li, Bo Zhang:
Mechanisms and characteristics of a low-loss split gate trench MOSFET with shield layer. Microelectron. J. 118: 105310 (2021)
2010 – 2019
- 2016
- [c2]Xuejing Shi, Gang Huang, Ming Qiao, Bingnan Wang:
Geographical Situation Monitoring Applications Based on MiniSAR. GRMSE (1) 2016: 350-355 - 2015
- [c1]Xin Zhou, Ming Qiao, Yang Li, Zhaoji Li, Bo Zhang:
Effect of field implantation on off- and on-state characteristics for thin layer SOI field P-channel LDMOS. ASICON 2015: 1-4 - 2014
- [j3]Ming Qiao, Xin Zhang, Shuai Wen, Bo Zhang, Zhaoji Li:
A review of HVI technology. Microelectron. Reliab. 54(12): 2704-2716 (2014) - 2013
- [j2]Lingli Jiang, Hang Fan, Ming Qiao, Bo Zhang, Zhaoji Li:
ESD characterization of a 190V LIGBT SOI ESD power clamp structure for plasma display panel applications. Microelectron. Reliab. 53(5): 687-693 (2013) - 2010
- [j1]Jiazhong Xu, Ming Qiao, Xinying Wang:
Control system design and analysis of FRP pipe thread-grinding machine. Int. J. Comput. Appl. Technol. 39(4): 177-186 (2010)
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