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2020 – today
- 2024
[c5]S. Ghosh, A. Kruv, Quentin Smets, Tom Schram, D. J. Leech, T. Ding, V. Turkani, Benjamin Groven, A. Dangel, G. Probst, Thomas Uhrmann, Markus Wimplinger, Inge Asselberghs, Cesar J. Lockhart de la Rosa, Steven Brems, Gouri Sankar Kar:
EOT Scaling Via 300mm MX2 Dry Transfer - Steps Toward a Manufacturable Process Development and Device Integration. VLSI Technology and Circuits 2024: 1-2- 2023
- [c4]Souvik Ghosh
, Quentin Smets, S. Banerjee, Tom Schram, Koen Kennes, R. Verheyen, P. Kumar, M.-E. Boulon, Benjamin Groven, H. M. Silva, Shreya Kundu, Daire Cott, Dennis Lin, P. Favia, T. Nuytten, A. Phommahaxay, Inge Asselberghs, C. De La Rosa, Gouri Sankar Kar, Steven Brems:
Integration of epitaxial monolayer MX₂ channels on 300mm wafers via Collective-Die-To-Wafer (CoD2W) transfer. VLSI Technology and Circuits 2023: 1-2 - [c3]Shreya Kundu, D. H. van Doip, Tom Schram, Quentin Smets, S. Banerjee, Benjamin Groven, Daire Cott, Stefan Decoster, P. Bezard, F. Lazzarino, K. Banerjee, Souvik Ghosh, J. F. de Mamelfe, Pierre Morin, Cesar J. Lockhart de la Rosa, Inge Asselberghs, Gouri Sankar Kar:
Towards low damage and fab-compatible top-contacts in MX2 transistors using a combined synchronous pulse atomic layer etch and wet-chemical etch approach. VLSI Technology and Circuits 2023: 1-2 - 2021
- [c2]Dennis Lin, Xiangyu Wu, Vivek Mootheri, Daire Cott, Benjamin Groven, Pierre Morin, Inge Asselberghs, Iuliana P. Radu:
On MX2-based metal-oxide-semiconductor device capacitance-voltage characteristics and dual-gate operation. DRC 2021: 1-2
2010 – 2019
- 2017
- [c1]Tom Schram, Quentin Smets, Benjamin Groven, M. H. Heyne, E. Kunnen, A. Thiam, Katia Devriendt, Annelies Delabie, Dennis Lin, M. Lux, Daniele Chiappe, I. Asselberghs, S. Brus, Cedric Huyghebaert, S. Sayan, A. Juncker, Matty Caymax, Iuliana P. Radu:
WS2 transistors on 300 mm wafers with BEOL compatibility. ESSDERC 2017: 212-215
Coauthor Index
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