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ORCIDEnrico Sangiorgi
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2020 – today
- 2024
[c7]M. Millesimo, Claudio Fiegna, Benoit Bakeroot, Matteo Borga, Niels Posthuma, Stefaan Decoutere, Enrico Sangiorgi, Andrea Natale Tallarico:
Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate. IRPS 2024: 1-6- 2022
- [c6]M. Millesimo
, Benoit Bakeroot, Matteo Borga, Niels Posthuma, Stefaan Decoutere, Enrico Sangiorgi, Claudio Fiegna, Andrea Natale Tallarico:
Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition. IRPS 2022: 10 - 2020
- [c5]Andrea Natale Tallarico, Susanna Reggiani, Riccardo Depetro, Giuseppe Croce, Enrico Sangiorgi, Claudio Fiegna:
Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors. IRPS 2020: 1-5
2010 – 2019
- 2019
- [c4]Davide Cornigli, Andrea Natale Tallarico, Susanna Reggiani, Claudio Fiegna, Enrico Sangiorgi, Luis Sanchez, Carlos Valdivieso, Giuseppe Consentino, Felice Crupi:
Characterization and Modeling of BTI in SiC MOSFETs. ESSDERC 2019: 82-85 - [c3]Federico Giuliano, Riccardo Depetro, Giuseppe Croce, Andrea Natale Tallarico, Susanna Reggiani, Antonio Gnudi, Enrico Sangiorgi, Claudio Fiegna, Mattia Rossetti, Antonio Molfese, Stefano Manzini:
TCAD predictions of hot-electron injection in p-type LDMOS transistors. ESSDERC 2019: 86-89 - [c2]Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Benoit Bakeroot, Andrea Natale Tallarico, Enrico Sangiorgi, Claudio Fiegna, J. Zheng, X. Ma, Matteo Borga, Elena Fabris, Matteo Meneghini, Enrico Zanoni, Gaudenzio Meneghesso, Juraj Priesol, Alexander Satka:
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability. IRPS 2019: 1-10 - 2018
- [j12]Susanna Reggiani, Mattia Rossetti, Antonio Gnudi, Andrea Natale Tallarico, Antonio Molfese, Stefano Manzini, Riccardo Depetro, Giuseppe Croce, Enrico Sangiorgi, Claudio Fiegna:
TCAD investigation on hot-electron injection in new-generation technologies. Microelectron. Reliab. 88-90: 1090-1093 (2018) - 2017
- [j11]Aldo Romani, Marco Tartagni, Enrico Sangiorgi:
Doing a Lot with a Little: Micropower Conversion and Management for Ambient-Powered Electronics. Computer 50(6): 41-49 (2017) - [j10]Andrea Natale Tallarico, Susanna Reggiani, Paolo Magnone, Giuseppe Croce, Riccardo Depetro, P. Gattari, Enrico Sangiorgi, Claudio Fiegna:
Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxide. Microelectron. Reliab. 76-77: 475-479 (2017) - [j9]Marco Crescentini, Michele Biondi, Aldo Romani, Marco Tartagni, Enrico Sangiorgi:
Optimum Design Rules for CMOS Hall Sensors. Sensors 17(4): 765 (2017) - 2013
- [j8]Muthupandian Cheralathan, Esteban Contreras, Joaquín Alvarado, Antonio Cerdeira, Giuseppe Iannaccone, Enrico Sangiorgi, Benjamín Iñíguez:
Implementation of nanoscale double-gate CMOS circuits using compact advanced transport models. Microelectron. J. 44(2): 80-85 (2013) - 2012
- [j7]Raffaele De Rose, Antonio Malomo, Paolo Magnone, Felice Crupi, Giorgio Cellere, Marco Martire, Diego Tonini, Enrico Sangiorgi:
A methodology to account for the finger interruptions in solar cell performance. Microelectron. Reliab. 52(9-10): 2500-2503 (2012)
2000 – 2009
- 2007
- [c1]Enrico Sangiorgi, Pierpaolo Palestri, David Esseni, Claudio Fiegna, Luca Selmi:
The Monte Carlo approach to transport modeling in deca-nanometer MOSFETs. ESSCIRC 2007: 48-57
1990 – 1999
- 1993
- [j6]Antonio Abramo, Franco Venturi, Enrico Sangiorgi, Jack M. Higman, Bruno Riccò:
A numerical method to compute isotropic band models from anisotropic semiconductor band structures. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 12(9): 1327-1336 (1993) - 1991
- [j5]Franco Venturi, Enrico Sangiorgi, Rossella Brunetti, Wolfgang Quade, Carlo Jacoboni, Bruno Riccò:
Monte Carlo simulations of high energy electrons and holes in Si-n-MOSFET's. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 10(10): 1276-1286 (1991) - 1990
- [j4]Enrico Sangiorgi:
Latch-up in CMOS circuits: A review. Eur. Trans. Telecommun. 1(3): 337-349 (1990)
1980 – 1989
- 1989
- [j3]Franco Venturi, R. Kent Smith, Enrico Sangiorgi, Mark R. Pinto, Bruno Riccò:
A general purpose device simulator coupling Poisson and Monte Carlo transport with applications to deep submicron MOSFETs. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 8(4): 360-369 (1989) - 1988
- [j2]Enrico Sangiorgi, Bruno Riccò, Franco Venturi:
MOS2: an efficient MOnte Carlo Simulator for MOS devices. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 7(2): 259-271 (1988) - 1985
- [j1]Enrico Sangiorgi, Mark R. Pinto, Stanley E. Swirhun, Robert W. Dutton:
Two-Dimensional Numerical Analysis of Latchup in a VLSI CMOS Technology. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 4(4): 561-574 (1985)
Coauthor Index
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