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ORCIDBCICTS 2021: Monterey, CA, USA
- IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2021, Monterey, CA, USA, December 5-8, 2021. IEEE 2021, ISBN 978-1-6654-3990-9
- Ajay Shanbhag, Sruthi M. P
, Farid Medjdoub, Anjan Chakravorty, Nandita DasGupta, Amitava DasGupta:
Optimized Buffer Stack with Carbon-Doping for Performance Improvement of GaN HEMTs. 1-4 - Bart Moeneclaey, Michiel Verplaetse, Hannes Ramon, Nishant Singh, Haolin Li, Joris Van Kerrebrouck, Xin Yin, Guy Torfs:
A 6-bit 56-GSa/s DAC in 55 nm SiGe BiCMOS. 1-4 - Moon-Kyu Cho, Ickhyun Song, Nelson E. Lourenco, Adilson S. Cardoso, Christopher T. Coen, William B. Hunter, Douglas R. Denison, John D. Cressler:
A S/C/X/Ku-band, 4-Tap, Digitally Controllable Analog FIR Filter with Reconfigurable Bandwidth and RF Filtering Profile. 1-4 - José Pedro, João Gomes, Luis C. Nunes:
Electro-Thermal and Trapping Characterization of AlGaN/GaN RF Power HEMTs. 1-6 - Mohammed Iftekhar, Sergiy Gudyriev, Johann-Christoph Scheytt:
Reference-less Bang-bang CDR with Enhanced Frequency Acquisition Range Using Static and Modulated Integral Branch Offset Currents. 1-4 - Xuanyi Dong, Andreas Weisshaar:
Compact Design of Passive Networks in RF and Millimeter-Wave Integrated Circuits (invited). 1-4 - Nil Davy, Virginie Nodjiadjim, Muriel Riet, Colin Mismer, Marina Deng, Chhandak Mukherjee, Jérémie Renaudier, Cristell Maneux:
0.4-μm InP/InGaAs DHBT with a 380-GHz ${f_{T}}$, > 600-GHz $f_{\max}$ and BVCE0 > 4.5 V. 1-4 - Peter J. Zampardi:
From Transistor Parameters to PA Circuit Performance (Invited). 1-7 - David E. Root, Jianjun Xu, Masaya Iwamoto:
Thermal Resistance Formulation and Analysis of III-V FETs Based on DC Electrical Data. 1-4 - Mark J. W. Rodwell, Ali A. Farid, Ahmed S. H. Ahmed, Munkyo Seo, Utku Soylu, Amirreza Alizadeh, Navid Hosseinzadeh:
100-300GHz Wireless: ICs, Arrays, and Systems. 1-4 - Dimitris P. Ioannou, Uppili S. Raghunathan, Dave Brochu, Adam W. DiVergilio, Vibhor Jain, John J. Pekarik:
Physics of Hot Carrier Degradation Under Off-State Mode Operation in High Performance NPN SiGe HBTs. 1-4 - John J. Pekarik, Vibhor Jain, Crystal Kenney, Judson Holt, Shweta Khokale, Sudesh Saroop, Jeffrey B. Johnson, Kenneth J. Stein, Viorel Ontalus, Christopher Durcan, Mona Nafari, Tayel Nesheiwat, Sangameshwar Saudari, Elahe Yarmoghaddam, Saloni Chaurasia, Alvin J. Joseph:
SiGe HBTs with ${f_{T}/f_{\max}\, \sim\, 375/510GHz}$ Integrated in 45nm PDSOI CMOS. 1-4 - Matteo Meneghini, Nicola Modolo, Arianna Nardo, Carlo De Santi, Andrea Minetto, Luca Sayadi, Christian Koller, Sebastien Sicre, Gerhard Prechtl, Gaudenzio Meneghesso, Enrico Zanoni:
Charge Trapping in GaN Power Transistors: Challenges and Perspectives. 1-4 - Nivedhita Venkatesan, Jeong-Sun Moon, Patrick Fay:
Electric Field Engineering in Graded-Channel GaN-Based HEMTs. 1-4 - Ajay Raman, Vibhor Jain, Elanchezhian Veeramani, Beng Woon Lim, Uppili S. Raghunathan, Yves Ngu, Alvin Joseph:
Analysis of the Factors Limiting the RF Breakdown Voltage in SiGe HBTs for Wi-Fi PA Applications. 1-4 - Mark D. Hickle, Kevin Grout, Curtis Grens, Gregory M. Flewelling, Steven Eugene Turner:
A Single-Chip 25.3-28.0 GHz SiGe BiCMOS PLL with -134 dBc/Hz Phase Noise at 10 MHz Offset and -96 dBc Reference Spurs. 1-4 - Noriaki Tawa, Paolo Enrico de Falco, Ohgami Kazuya, Taylor W. Barton, Tomoya Kaneko:
A 3.5-GHz 350-W Black-Box Doherty Amplifier Design Method Without Using Transistor Models. 1-4 - Minoru Fujishima:
Advances in Terahertz CMOS for 6G. 1-4 - Frédéric Boeuf, Cyrille Barrera, Ismael Charlet, Michele Calvo, Antonio Fincato, Stéphane Monfray, Sylvain Guerber, Sebastien Cremer, Nathalie Vulliet, Jean Francois Carpentier, Luca Maggi, Daivid Fowler, Christophe Jany, Patrick Le Maitre, Maurin Douix, Régis Orobtchouk, Delphine Marris-Morini, Laurent Vivien:
Silicon Photonics Platform from Datacom to Sensing Applications. 1-8 - Hector Andrade, Aaron Maharry, Luis A. Valenzuela, Navid Hosseinzadeh, Clint Schow, James F. Buckwalter:
An 8.2-pJ/bit, 56 Gb/s Traveling-wave Modulator Driver with Large Reverse Terminations. 1-4 - Romain Hersent, Tom K. Johansen, Virginie Nodjiadjim, Filipe Jorge, Bernadette Duval, Fabrice Blache, Muriel Riet, Colin Mismer, Agnieszka Konczykowska:
Design, Modelling and Characterization of a 3-Vppd 90-GBaud Over-110-GHz-Bandwidth Linear Driver in 0.5-μm InP DHBTs for Optical Communications. 1-4 - Jerome Cheron, Rob D. Jones, Richard A. Chamberlin, Dylan F. Williams, Miguel E. Urteaga, Kassiopeia A. Smith, Nicholas R. Jungwirth, Bryan T. L. Bosworth, Christian J. Long, Nathan D. Orloff, Peter H. Aaen, Ari D. Feldman:
High-Gain 500-GHz InP HBT Power Amplifiers. 1-4 - Vikas Shilimkar, Kevin Kim:
RF LDMOS Transistor Plastic Immunity Enhancement in Power Amplifier Module for 5G Applications. 1-4 - Marina Deng, Chhandak Mukherjee, Nil Davy, Virginie Nodjiadjim, Muriel Riet, Colin Mismer, Jérémie Renaudier, Magali De Matos, Cristell Maneux:
InP DHBT Characterization up to 500 GHz and Compact Model Validation Towards THz Circuit Design. 1-4 - Shamima Afroz, Timothy Vasen, Brian Novak, Ken A. Nagamatsu, Patrick Shea, Sam Wanis, Robert S. Howell, Josephine Chang:
Frequency Performance Improvements for SLCFET Amplifier Through Device Scaling. 1-4 - Jerome T. Mlack, Nick Edwards, Brian Novak, Annaliese Drechsler, Jordan Merkel, Timothy Vasen, Daniel J. Hannan, Paul Brabant, Ishan Wathuthanthri, Justin Parke, Sam Wanis, Robert S. Howell, Ken A. Nagamatsu:
Yield and Scaling Improvements in Next-Generation 2.5 THz SLCFET Devices to Enable Ultra-wideband DC-110GHz Switch MMICs. 1-4 - Boli Peng, Sven Mothes, Manojkumar Annamalai, Michael Schröter:
Evaluation of Stacked-CNTFET Structures for High-performance Applications. 1-4 - Harrison P. Lee, Jeffrey W. Teng, Nelson Sepúlveda-Ramos, John D. Cressler:
Dynamic Behavior of Breakdown Mechanisms in SiGe HBTs. 1-4 - Philipp Thomas, Markus Grözing, Manfred Berroth:
Analog Demultiplexer Operating at up to 200 GS/s Using Four Time Interleaved Switched Emitter Followers with a 50% Duty Cycle Clock. 1-4 - Ivan Berdalovic, Mirko Poljak, Tomislav Suligoj:
Comparison of Transport Properties in Enhancement-mode GaN HEMT Structures Using an Advanced Modeling Framework. 1-4 - Christoph Weimer, Paulius Sakalas, Markus Müller, Gerhard G. Fischer, Michael Schröter:
An Experimental Load-Pull Based Large-Signal RF Reliability Study of SiGe HBTs. 1-4 - Sascha Breun, Albert-Marcel Schrotz, Marco Dietz, Vadim Issakov, Robert Weigel:
A 268-325 GHz 5.2 dBm Psat Frequency Doubler Using Transformer-Based Mode Separation in SiGe BiCMOS Technology. 1-4 - Oguz Kazan, Gabriel M. Rebeiz:
A 10-130 GHz Distributed Power Amplifier Achieving 2.6 THz GBW with Peak 13.1 dBm Output P1dB for Ultra-Wideband Applications in 90nm SiGe HBT Technology. 1-4 - Sébastien Fregonese, Chhandak Mukherjee, Holger Rücker, Pascal Chevalier, Gerhard Fischer, Didier Céli, Marina Deng, Marine Couret, François Marc, Cristell Maneux, Thomas Zimmer:
Electro-Thermal Limitations and Device Degradation of SiGe HBTs with Emphasis on Circuit Performance. 1-7 - Michael Litchfield, Douglas Dugas:
10W and 30W, 32-37 GHz, Ka-Band GaN MMIC Power Amplifiers on SiC. 1-4 - Yingying Yang, Bin Li, Brian Johnson, Hal Banbrook:
A Novel Method to Determine Transistor Geometry for PA Design. 1-4 - Teruo Jyo, Munehiko Nagatani, Miwa Mutoh, Yuta Shiratori, Hitoshi Wakita, Hiroyuki Takahashi:
An Over 130-GHz-Bandwidth InP-DHBT Baseband Amplifier Module. 1-4 - Zhixing Zhao, Steffen Lehmann, Wei Lun Oo, Amit Kumar Sahoo, Shafi Syed, Quang Huy Le, Dang Khoa Huynh, Talha Chohan, Dirk Utess, Dominik Kleimaier, Maciej Wiatr, Sabine Kolodinski, Jerome Mazurier, Jan Hoentschel, Andreas Knorr, Ned Cahoon, Stefan Kneitz:
22FDSOI device towards RF and mmWave applications. 1-6 - Mohammad Sotoodeh, Ryohei Urata, Xiang Zhou, Lieven Verslegers, Hong Liu:
Modulator Technologies for Intra-Datacenter Optical Interconnects Beyond 1Tbps. 1-5 - Sruthi M. P, Ajay Shanbhag, Anjan Chakravorty, Nandita DasGupta, Amitava DasGupta:
Physics based Compact Model for Drain Current in Fin-Shaped GaN MIS-HEMTs. 1-4 - Peter Magnée, Domine Leenaerts, Mark P. van der Heijden, Thanh Viet Dinh, Ivan To, Ihor Brunets:
The future of SiGe BiCMOS: bipolar amplifiers for high-performance millimeter-wave applications. 1-7 - Tie Sun, John Rogers, Mike Rogers, Ian Dedic, Mahdi Parvizi, Ying Zhao, Li Chen, Long Chen, Ricardo Aroca:
Silicon Photonic Mach-Zehnder Modulator Driver for 800+Gb/s Optical Links. 1-5 - S. Phillips, Ed Preisler, J. Zheng, S. Chaudhry, M. Racanelli, Markus Müller, Michael Schröter, W. McArthur, D. Howard:
Advances in foundry SiGe HBT BiCMOS processes through modeling and device scaling for ultra-high speed applications. 1-5 - Bo Zhao, Chris Sanabria, Terry Hon:
A 2-Stage C-Band 130W GaN MMIC Power Amplifier in an Overmold QFN Package. 1-4 - Markus Müller, Michael Schröter, Christoph Jungemann, Christoph Weimer:
Augmented Drift-Diffusion Transport for the Simulation of Advanced SiGe HBTs. 1-4 - Andrea Alù:
Opportunities for Millemeter-Wave Wireless Technologies Using Metasurfaces. 1-4 - Dongsheng Brian Ma, Dong Yan, Lixiong Du:
Active Conducted EMI Suppression in GaN Switching Power Circuits. 1-6 - Josip Zilak, Zeljko Osrecki, Marko Koricic, Filip Bogdanovic, Tomislav Suligoj:
Potential of High-Voltage Single-Emitter RESURF Horizontal Current Bipolar Transistor for RF Circuits. 1-4 - Justin Romstadt, Hakan Papurcu, Ahmad Zaben, Steffen Hansen, Klaus Aufinger, Nils Pohl:
Comparison on spectral purity of two SiGe D-Band frequency octuplers in MIMO radar MMICs. 1-4 - Tobias Tannert, Markus Grözing, Manfred Berroth, Christian Schmidt, Jung Han Choi, Christoph Caspar, Jonathan Schostak, Volker Jungnickel, Ronald Freund, Holger Rücker:
Analog 2: 1 Multiplexer with over 110 GHz Bandwidth in SiGe BiCMOS Technology. 1-4 - Ali A. Farid, Ahmed S. H. Ahmed, Aditya Dhananjay, Panagiotis Skrimponis, Sundeep Rangan, Mark J. W. Rodwell:
135GHz CMOS / LTCC MIMO Receiver Array Tile Modules. 1-4 - Adel Fatemi, Gerhard Kahmen, Andrea Malignaggi:
A Multi-mode Linear Optical Modulator Driver Circuit in 130 nm SiGe BiCMOS Technology. 1-4 - Tong Liu, Yuanming Zhu, Anil Korkmaz, Siamak Delshadpour, Samuel Palermo:
A 40Gb/s Linear Redriver with Multi-Band Equalization in 130nm SiGe BiCMOS. 1-4 - Sujan Sarkar, Ramdas P. Khade, Nandita DasGupta, Amitava DasGupta:
A Simple Technique to Estimate Surface Traps from DC Transfer Characteristics of GaN-Based HEMT. 1-4 - Anthony E. Parker:
GaN and GaAs HEMT Channel Current Model for Nonlinear Microwave and RF Applications. 1-8 - Kathleen Muhonen, Evan Grund, Robert Ashton:
High-Speed TLP and ESD Characterization of ICs. 1-6 - Anton N. Atanasov, Waqam H. R. A. Mukhtar Ahmad, Mark S. Oude Alink, Frank E. van Vliet:
A Simple and Efficient Procedure for Identifying the Compressing Stage in Two-Stage Amplifiers. 1-4
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