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2020 – today
- 2021
[j14]Ana Ruiz
, Carlos Couso, Natalia Seoane, Marc Porti, Antonio J. García-Loureiro, Montserrat Nafría:
Methodology for the Simulation of the Variability of MOSFETs With Polycrystalline High-k Dielectrics Using CAFM Input Data. IEEE Access 9: 90568-90576 (2021)
2010 – 2019
- 2018
- [c3]Enrique Barajas, Xavier Aragonès, Diego Mateo, Francesc Moll, Antonio Rubio, Javier Martín-Martínez, Rosana Rodríguez, Marc Porti, Montserrat Nafría, Rafael Castro-López, Elisenda Roca, Francisco V. Fernández:
Analysis of Body Bias and RTN-Induced Frequency Shift of Low Voltage Ring Oscillators in FDSOI Technology. PATMOS 2018: 82-87 - 2015
- [c2]V. Velayudhan, Javier Martín-Martínez, Marc Porti, Carlos Couso, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, Carlos Marquez, Francisco Gámiz:
Threshold voltage and on-current Variability related to interface traps spatial distribution. ESSDERC 2015: 230-233 - [c1]Violaine Iglesias, Marc Porti, Carlos Couso, Q. Wu, S. Claramunt, Montserrat Nafría, Enrique Miranda, Neus Domingo, Gennadi Bersuker, Aaron Cordes:
Threading dislocations in III-V semiconductors: Analysis of electrical conduction. IRPS 2015: 4 - 2013
- [j13]Albin Bayerl, Mario Lanza, Lidia Aguilera, Marc Porti, Montserrat Nafría, Xavier Aymerich, Stefan De Gendt:
Nanoscale and device level electrical behavior of annealed ALD Hf-based gate oxide stacks grown with different precursors. Microelectron. Reliab. 53(6): 867-871 (2013) - 2012
- [j12]Violaine Iglesias, Mario Lanza, Albin Bayerl, Marc Porti, Montserrat Nafría, Xavier Aymerich, Lifeng Liu, Jinfeng Kang, Gennadi Bersuker, Kai Zhang, Ziyong Shen:
Nanoscale observations of resistive switching high and low conductivity states on TiN/HfO2/Pt structures. Microelectron. Reliab. 52(9-10): 2110-2114 (2012) - 2010
- [j11]Mario Lanza, Marc Porti, Montserrat Nafría, Xavier Aymerich, E. Whittaker, B. Hamilton:
UHV CAFM characterization of high-k dielectrics: Effect of the technique resolution on the pre- and post-breakdown electrical measurements. Microelectron. Reliab. 50(9-11): 1312-1315 (2010)
2000 – 2009
- 2009
- [j10]Mario Lanza, Marc Porti, Montserrat Nafría, Xavier Aymerich, G. Ghidini, A. Sebastiani:
Trapped charge and stress induced leakage current (SILC) in tunnel SiO2 layers of de-processed MOS non-volatile memory devices observed at the nanoscale. Microelectron. Reliab. 49(9-11): 1188-1191 (2009) - 2008
- [j9]W. Polspoel, Wilfried Vandervorst, Lidia Aguilera, Marc Porti, Montserrat Nafría, Xavier Aymerich:
Nanometer-scale leakage measurements in high vacuum on de-processed high-k capacitors. Microelectron. Reliab. 48(8-9): 1521-1524 (2008) - 2007
- [j8]Mario Lanza, Marc Porti, Montserrat Nafría, Guenther Benstetter, Werner Frammelsberger, Heiko Ranzinger, E. Lodermeier, G. Jaschke:
Influence of the manufacturing process on the electrical properties of thin (k stacks observed with CAFM. Microelectron. Reliab. 47(9-11): 1424-1428 (2007) - 2005
- [j7]Lidia Aguilera, Marc Porti, Montserrat Nafría, Xavier Aymerich:
Pre- and post-BD electrical conduction of stressed HfO2/SiO2 MOS gate stacks observed at the nanoscale. Microelectron. Reliab. 45(9-11): 1390-1393 (2005) - 2004
- [j6]Marc Porti, S. Meli, Montserrat Nafría, Xavier Aymerich:
Standard and C-AFM tests to study the post-BD gate oxide conduction of MOS devices after current limited stresses. Microelectron. Reliab. 44(9-11): 1523-1528 (2004) - 2003
- [j5]Marc Porti, S. Meli, Montserrat Nafría, Xavier Aymerich:
Pre-breakdown noise in electrically stressed thin SiO2 layers of MOS devices observed with C-AFM. Microelectron. Reliab. 43(8): 1203-1209 (2003) - [j4]Marc Porti, Montserrat Nafría, Xavier Aymerich:
Oxide conductivity increase during the progressive-breakdown of SiO2 gate oxides observed with C-AFM. Microelectron. Reliab. 43(9-11): 1501-1505 (2003) - 2001
- [j3]Rosana Rodríguez, Marc Porti, Montserrat Nafría, Xavier Aymerich:
Influence of a low field with opposite polarity to the stress on the degradation of 4.5 nm thick SiO2 films. Microelectron. Reliab. 41(7): 1011-1013 (2001) - [j2]Marc Porti, X. Blasco, Montserrat Nafría, Xavier Aymerich, Alexander Olbrich, Bernd Ebersberger:
Local current fluctuations before and after breakdown of thin SiO2 films observed with conductive atomic force microscope. Microelectron. Reliab. 41(7): 1041-1044 (2001) - [j1]Daniel Hill, X. Blasco, Marc Porti, Montserrat Nafría, Xavier Aymerich:
Characterising the surface roughness of AFM grown SiO2 on Si. Microelectron. Reliab. 41(7): 1077-1079 (2001)
Coauthor Index
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