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2020 – today
- 2024
[c1]Michele Ammendola, Giuseppe Massimiliano De Luca, Francesca Vescio, Nicola de'Angelis, Valeria Zuccalà, Andrea Balla, Umberto Bracale, Ludovica Guerriero, Giovanni Laracca, Vinicio Mosca
, Domenico Spoletini, Monica Ortenzi, Diego Cuccurullo, Mario Testini, Giuseppe Navarra, Gabriele Anania, Pietro Mascagni, Silvia Curcio, Giuseppe Currò, Mohanad Al Ansari:
Avatar Surgeon, Digital Pathology and Telementoring: SICE New Technology and Training Research Group Experience. XR (2) 2024: 360-368
2010 – 2019
- 2011
- [j15]Giovanni Busatto, D. Bisello, Giuseppe Currò, Piero Giubilato, Francesco Iannuzzo, S. Mattiazzo, D. Pantano, Annunziata Sanseverino, L. Silvestrin, M. Tessaro, Francesco Velardi, Jeffery Wyss:
A new test methodology for an exhaustive study of single-event-effects on power MOSFETs. Microelectron. Reliab. 51(9-11): 1995-1998 (2011) - 2010
- [j14]Giovanni Busatto, Giuseppe Currò, Francesco Iannuzzo, Alberto Porzio, Annunziata Sanseverino, Francesco Velardi:
Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET. Microelectron. Reliab. 50(9-11): 1842-1847 (2010)
2000 – 2009
- 2009
- [j13]Giovanni Busatto, Giuseppe Currò, Francesco Iannuzzo, Alberto Porzio, Annunziata Sanseverino, Francesco Velardi:
Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions. Microelectron. Reliab. 49(9-11): 1033-1037 (2009) - 2008
- [j12]Giovanni Busatto, Giuseppe Currò, Francesco Iannuzzo, Alberto Porzio, Annunziata Sanseverino, Francesco Velardi:
Experimental evidence of "latent gate oxide damages" in medium voltage power MOSFET as a result of heavy ions exposure. Microelectron. Reliab. 48(8-9): 1306-1309 (2008) - 2007
- [j11]Giuseppe Currò, Marco Camalleri, Denise Calì, Francesca Monforte, Fortunato Neri:
Carrier trapping in thin N2O-grown oxynitride/oxide di-layer for PowerMOSFET devices. Microelectron. Reliab. 47(4-5): 798-801 (2007) - [j10]Giacomo Barletta, Giuseppe Currò:
Evaluation of the generation mechanisms at surface and in the bulk of the silicon by current transient technique. Microelectron. Reliab. 47(4-5): 810-814 (2007) - [j9]Alessandra Cascio, Giuseppe Currò, A. Cavagnoli:
Total ionizing dose reliability of thin SiO2 in PowerMOSFET devices. Microelectron. Reliab. 47(4-5): 815-818 (2007) - [j8]Giuseppe Currò, Marco Camalleri, Denise Calì, Francesca Monforte, Fortunato Neri:
Interface states and traps in thin N2O-grown oxynitride/oxide di-layer for PowerMOSFET devices. Microelectron. Reliab. 47(4-5): 819-821 (2007) - [j7]Francesca Monforte, Marco Camalleri, Denise Calì, Giuseppe Currò, Enza Fazio, Fortunato Neri:
Nitrogen bonding configurations near the oxynitride/silicon interface after oxynitridation in N2O ambient of a thin SiO2 gate. Microelectron. Reliab. 47(4-5): 822-824 (2007) - 2006
- [j6]Giovanni Busatto, Francesco Iannuzzo, Alberto Porzio, Annunziata Sanseverino, Francesco Velardi, Giuseppe Currò:
Experimental study of power MOSFET's gate damage in radiation environment. Microelectron. Reliab. 46(9-11): 1854-1857 (2006) - 2005
- [j5]Giacomo Barletta, Giuseppe Currò:
Junction leakage current degradation under high temperature reverse-bias stress induced by band-defect-band tunnelling in power VDMOS. Microelectron. Reliab. 45(5-6): 994-999 (2005) - [j4]Giovanni Busatto, Alberto Porzio, Francesco Velardi, Francesco Iannuzzo, Annunziata Sanseverino, Giuseppe Currò:
Experimental and Numerical investigation about SEB/SEGR of Power MOSFET. Microelectron. Reliab. 45(9-11): 1711-1716 (2005) - 2004
- [j3]Francesco Velardi, Francesco Iannuzzo, Giovanni Busatto, Alberto Porzio, Annunziata Sanseverino, Giuseppe Currò, Alessandra Cascio, Ferruccio Frisina:
The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure. Microelectron. Reliab. 44(9-11): 1407-1411 (2004) - 2003
- [j2]Francesco Velardi, Francesco Iannuzzo, Giovanni Busatto, Jeffery Wyss, Annunziata Sanseverino, A. Candelori, Giuseppe Currò, Alessandra Cascio, Ferruccio Frisina:
Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment. Microelectron. Reliab. 43(9-11): 1847-1851 (2003) - 2002
- [j1]Giuseppe Currò, R. Greco, Antonino Scandurra:
Growth process and chemical characterization of an ultrathin phosphate film grafted onto Al-alloy metallization surfaces relevant to microelectronic devices reliability. Microelectron. Reliab. 42(9-11): 1659-1662 (2002)
Coauthor Index
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