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Tzung-Yu Wu

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2010 – 2019

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2017
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  - https://dblp.org/rec/journals/mr/LiCCHLGCWHCY17
Yan-Lin Li, Kuei-Shu Chang-Liao, Yu-Wei Chang, Tse-Jung Huang, Chen-Chien Li, Zhao-Chen Gu, Po-Yen Chen, Tzung-Yu Wu, Jiayi Huang, Fu-Chuan Chu, Shih-Han Yi:
Improved reliability characteristics of Ge MOS devices by capping Hf or Zr on interfacial layer. Microelectron. Reliab. 79: 136-139 (2017)

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