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ORCIDJosé Millán
Person information
Other persons with a similar name
- J. Manuel López-Millan (aka: José Manuel López-Millan)
- José M. Ohno Millán
- José Miguel Villalón Millán
![[0000-0002-8546-7130]](https://dblp.org/img/orcid-mark.12x12.png "0000-0002-8546-7130")
(aka: José Villalón) — University of Castilla-La Mancha, Albacete, Spain - José del R. Millán
- Jose M. Millán
- Jose Antonio Jimenez Millan
- Jose A. Millan-Romera
- Jose Andres Millan-Romera
- José Antonio Ruiz-Millán
- Jose Luis Millan Villegas
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2010 – 2019
- 2016
[j15]Viorel Banu, Victor Soler, Josep Montserrat, José Millán, Philippe Godignon:
Power cycling analysis method for high-voltage SiC diodes. Microelectron. Reliab. 64: 429-433 (2016)- 2015
- [j14]Mihaela Alexandru, Viorel Banu, Xavier Jordà, Josep Montserrat, Miquel Vellvehí, Dominique Tournier, José Millán, Philippe Godignon:
SiC Integrated Circuit Control Electronics for High-Temperature Operation. IEEE Trans. Ind. Electron. 62(5): 3182-3191 (2015) - [c5]Victor Soler, Maxime Berthou, Andrei Mihaila, Josep Montserrat, Philippe Godignon, José Rebollo, José Millán:
Experimental analysis of planar edge terminations for high voltage 4H-SiC devices. ESSDERC 2015: 68-71 - 2014
- [c4]Matthieu Florentin, José Millán, Philippe Godignon, Mihaela Alexandru, Aurore Constant, Bernd Schmidt:
A positive impact of low proton irradiation energy on oxynitride gate 4H-SiC MOSFETs. ESSDERC 2014: 150-153 - 2013
- [c3]Viorel Banu, Philippe Godignon, Mihaela Alexandru, Miquel Vellvehí, Xavier Jordà, José Millán:
High temperature-low temperature coefficient analog voltage reference integrated circuit implemented with SiC MESFETs. ESSCIRC 2013: 427-430 - [c2]Mihaela Alexandru, Viorel Banu, Philippe Godignon, Miquel Vellvehí, José Millán:
4H-SiC MESFET specially designed and fabricated for high temperature integrated circuits. ESSDERC 2013: 103-106 - 2012
- [j13]Abel Fontserè, Amador Pérez-Tomás, Philippe Godignon, José Millán, Herbert De Vleeschouwer, John M. Parsey, Peter Moens:
Wafer scale and reliability investigation of thin HfO2·AlGaN/GaN MIS-HEMTs. Microelectron. Reliab. 52(9-10): 2220-2223 (2012) - [j12]Viorel Banu, Philippe Godignon, Xavier Perpiñà, Xavier Jordà, José Millán:
Enhanced power cycling capability of SiC Schottky diodes using press pack contacts. Microelectron. Reliab. 52(9-10): 2250-2255 (2012) - [c1]Abel Fontserè, Amador Pérez-Tomás, Philippe Godignon, José Millán, J. M. Parsey, Peter Moens:
High voltage low Ron in-situ SiN/Al0.35GaN0.65/GaN-on-Si power HEMTs operation up to 300°C. ESSDERC 2012: 306-309
2000 – 2009
- 2008
- [j11]Viorel Banu, Pierre Brosselard, Xavier Jordà, Josep Montserrat, Philippe Godignon, José Millán:
Behaviour of 1.2 kV SiC JBS diodes under repetitive high power stress. Microelectron. Reliab. 48(8-9): 1444-1448 (2008) - 2007
- [j10]José Millán:
Wide band-gap power semiconductor devices. IET Circuits Devices Syst. 1(5): 372-379 (2007) - [j9]X. Perpiñà, M. Piton, Michel Mermet-Guyennet, Xavier Jordà, José Millán:
Local thermal cycles determination in thermosyphon-cooled traction IGBT modules reproducing mission profiles. Microelectron. Reliab. 47(9-11): 1701-1706 (2007) - [j8]X. Perpiñà, Alberto Castellazzi, M. Piton, Michel Mermet-Guyennet, José Millán:
Failure-relevant abnormal events in power inverters considering measured IGBT module temperature inhomogeneities. Microelectron. Reliab. 47(9-11): 1784-1789 (2007) - [j7]Miquel Vellvehí, Xavier Jordà, Philippe Godignon, Carles Ferrer, José Millán:
Coupled electro-thermal simulation of a DC/DC converter. Microelectron. Reliab. 47(12): 2114-2121 (2007) - 2006
- [j6]X. Perpiñà, Jean-François Serviere, J. Saiz, Davide Barlini, Michel Mermet-Guyennet, José Millán:
Temperature measurement on series resistance and devices in power packs based on on-state voltage drop monitoring at high current. Microelectron. Reliab. 46(9-11): 1834-1839 (2006) - 2004
- [j5]Jaume Roig, David Flores, Salvador Hidalgo, José Rebollo, José Millán:
Thin-film silicon-on-sapphire LDMOS structures for RF power amplifier applications. Microelectron. J. 35(3): 291-297 (2004) - [j4]Amador Pérez-Tomás, Xavier Jordà, Philippe Godignon, Jose Luis Gálvez, Miquel Vellvehí, José Millán:
IGBT gate driver IC with full-bridge output stage using a modified standard CMOS process. Microelectron. J. 35(8): 659-666 (2004) - [j3]Xavier Perpiñà, Xavier Jordà, N. Mestres, Miquel Vellvehí, Philippe Godignon, José Millán:
Self-heating experimental study of 600V PT-IGBTs under low dissipation energies. Microelectron. J. 35(10): 841-847 (2004) - 2002
- [j2]Jaume Roig, David Flores, Miquel Vellvehí, José Rebollo, José Millán:
Reduction of self-heating effect on SOIM devices. Microelectron. Reliab. 42(1): 61-66 (2002) - 2001
- [j1]Marian Badila, Philippe Godignon, José Millán, S. Berberich, Gheorghe Brezeanu:
The electron irradiation effects on silicon gate dioxide used for power MOS devices. Microelectron. Reliab. 41(7): 1015-1018 (2001)
Coauthor Index
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