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2020 – today
- 2021
[c10]Andrea Redaelli
, Anna Gandolfo, Giulia Samanni, Enrico Gomiero, Elisa Petroni, Luca Scotti, Andrea Lippiello, Paolo Mattavelli, J. Jasse, D. Codegoni, A. Serafini, Rossella Ranica, Christian Boccaccio, Jury Sandrini, R. Berthelon, J. C. Grenier, Olivier Weber, David Turgis, A. Valery, S. Del Medico, V. Caubet, J. P. Reynard, Didier Dutartre, L. Favennec, Antonino Conte, Fabio Disegni, M. De Tomasi, A. Ventre, Matteo Baldo, Daniele Ielmini, Alfonso Maurelli, P. Ferreira, Franck Arnaud, F. Piazza, Paolo Cappelletti, Roberto Annunziata, R. Gonella:
Improving Ge-rich GST ePCM reliability through BEOL engineering. ESSDERC 2021: 231-234
2010 – 2019
- 2018
- [c9]Reda Boumchedda, Jean-Philippe Noel, Bastien Giraud, Adam Makosiej, Marco Antonio Rios, Eduardo Esmanhotto, Emilien Bourde-Cicé, Mathis Bellet, David Turgis, Edith Beigné:
Energy-Efficient 4T SRAM Bitcell with 2T Read-Port for Ultra-Low-Voltage Operations in 28 nm 3D Monolithic CoolCubeTM Technology. NANOARCH 2018: 131-137 - 2017
- [j2]Anuj Grover, G. S. Visweswaran, Chittoor R. Parthasarathy, Mohammad Daud, David Turgis, Bastien Giraud, Jean-Philippe Noel, Ivan Miro Panades, Guillaume Moritz, Edith Beigné, Philippe Flatresse, Promod Kumar, Shamsi Azmi:
A 32 kb 0.35-1.2 V, 50 MHz-2.5 GHz Bit-Interleaved SRAM With 8 T SRAM Cell and Data Dependent Write Assist in 28-nm UTBB-FDSOI CMOS. IEEE Trans. Circuits Syst. I Regul. Pap. 64-I(9): 2438-2447 (2017) - [j1]Reda Boumchedda, Jean-Philippe Noel, Bastien Giraud, Kaya Can Akyel, Melanie Brocard, David Turgis, Edith Beigné:
High-Density 4T SRAM Bitcell in 14-nm 3-D CoolCube Technology Exploiting Assist Techniques. IEEE Trans. Very Large Scale Integr. Syst. 25(8): 2296-2306 (2017) - 2016
- [c8]Lorenzo Ciampolini, Jean-Christophe Lafont, Faress Tissafi Drissi, Jean-Paul Morin, David Turgis, Xavier Jonsson, Cyril Desclèves, Joseph Nguyen:
Efficient yield estimation through generalized importance sampling with application to NBL-assisted SRAM bitcells. ICCAD 2016: 89 - [c7]Joseph Nguyen, David Turgis, David Bonciani, Brice Lhomme, Yann Carminati, Olivier Callen, Guillaume Guirleo, Lorenzo Ciampolini, Gérard Ghibaudo:
RAPIDO Testing and Modeling of Assisted Write and Read Operations for SRAMs. NATW 2016: 28-33 - [c6]Rossella Ranica, Nicolas Planes, Vincent Huard, Olivier Weber, Daniel Noblet, Damien Croain, Fabien Giner, Sylvie Naudet, P. Mergault, S. Ibars, A. Villaret, Maryline Parra, Sébastien Haendler, M. Quoirin, Florian Cacho, C. Julien, F. Terrier, Lorenzo Ciampolini, David Turgis, Christophe Lecocq, Franck Arnaud:
28nm FDSOI technology sub-0.6V SRAM Vmin assessment for ultra low voltage applications. VLSI Circuits 2016: 1-2 - 2015
- [c5]Anuj Grover, Promod Kumar, Mohammad Daud, G. S. Visweswaran, Chittoor R. Parthasarathy, Jean-Philippe Noel, David Turgis, Bastien Giraud, Guillaume Moritz:
Low Standby Power Capacitively Coupled Sense Amplifier for wide voltage range operation of dual rail SRAMs. ICICDT 2015: 1-4 - 2014
- [c4]Kaya Can Akyel, Lorenzo Ciampolini, Olivier Thomas, David Turgis, Gérard Ghibaudo:
Impact of Random Telegraph Signals on 6T high-density SRAM in 28nm UTBB FD-SOI. ESSDERC 2014: 94-97 - [c3]Robin Wilson, Edith Beigné, Philippe Flatresse, Alexandre Valentian, Fady Abouzeid, Thomas Benoist, Christian Bernard, Sebastien Bernard, Olivier Billoint, Sylvain Clerc, Bastien Giraud, Anuj Grover, Julien Le Coz, Ivan Miro Panades, Jean-Philippe Noël, Bertrand Pelloux-Prayer, Philippe Roche, Olivier Thomas, Yvain Thonnart, David Turgis, Fabien Clermidy, Philippe Magarshack:
27.1 A 460MHz at 397mV, 2.6GHz at 1.3V, 32b VLIW DSP, embedding FMAX tracking. ISSCC 2014: 452-453 - 2013
- [c2]Guillaume Moritz, Bastien Giraud, Jean-Philippe Noel, David Turgis, Anuj Grover:
Optimization of a voltage sense amplifier operating in ultra wide voltage range with back bias design techniques in 28nm UTBB FD-SOI technology. ICICDT 2013: 53-56 - 2012
- [c1]Anis Feki, Bruno Allard, David Turgis, Jean-Christophe Lafont, Lorenzo Ciampolini:
Proposal of a new ultra low leakage 10T sub threshold SRAM bitcell. ISOCC 2012: 470-474
Coauthor Index
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