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ORCIDDennis Lin
This is just a disambiguation page, and is not intended to be the bibliography of an actual person. Any publication listed on this page has not been assigned to an actual author yet. If you know the true author of one of the publications listed below, you are welcome to contact us.
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2020 – today
- 2023
[c11]L. Panarella, Ben Kaczer, Quentin Smets, Devin Verreck, Tom Schram, Daire Cott, Dennis Lin, Stanislav Tyaginov, I. Asselberghs, Cesar J. Lockhart de la Rosa, Gouri Sankar Kar, Valeri Afanas'ev:
Impact of gate stack processing on the hysteresis of 300 mm integrated WS2 FETs. IRPS 2023: 1-6- [c10]Souvik Ghosh
, Quentin Smets, S. Banerjee, Tom Schram, K. Kennes, R. Verheyen, P. Kumar, M.-E. Boulon, Benjamin Groven, H. M. Silva, Shreya Kundu, Daire Cott, Dennis Lin, P. Favia, T. Nuytten, A. Phommahaxay, Inge Asselberghs, C. De La Rosa, Gouri Sankar Kar, Steven Brems:
Integration of epitaxial monolayer MX₂ channels on 300mm wafers via Collective-Die-To-Wafer (CoD2W) transfer. VLSI Technology and Circuits 2023: 1-2 - 2021
- [c9]Dennis Lin, Xiangyu Wu, Vivek Mootheri, Daire Cott, Benjamin Groven, Pierre Morin, Inge Asselberghs, Iuliana P. Radu:
On MX2-based metal-oxide-semiconductor device capacitance-voltage characteristics and dual-gate operation. DRC 2021: 1-2
2010 – 2019
- 2019
- [c8]Yashwanth Balaji, Quentin Smets, Dennis Lin, I. Asselberghs, Iuliana P. Radu, Guido Groeseneken:
Tunnel FETs using Phosphorene/ReS2 heterostructures. DRC 2019: 113-114 - 2018
- [c7]Giovanni V. Resta, Jorge Romero Gonzalez, Yashwanth Balaji, Tarun Agarwal, Dennis Lin, Francky Catthoor, Iuliana P. Radu, Giovanni De Micheli, Pierre-Emmanuel Gaillardon:
Towards high-performance polarity-controllable FETs with 2D materials. DATE 2018: 637-641 - [c6]Giovanni V. Resta, Yashwanth Balaji, Dennis Lin, Iuliana P. Radu, Francky Catthoor, Pierre-Emmanuel Gaillardon, Giovanni De Micheli:
Doping-free complementary inverter enabled by 2D WSe2 electrostatically-doped reconfigurable transistors. DRC 2018: 1-2 - 2017
- [c5]Yashwanth Balaji, Quentin Smets, Cesar J. Lockhart de la Rosa, Anh Khoa Augustin Lu, Daniele Chiappe, Tarun Agarwal, Dennis Lin, Cedric Huyghebaert, Iuliana P. Radu, Dan Mocuta, Guido Groeseneken:
Tunneling transistors based on MoS2/MoTe2 Van der Waals heterostructures. ESSDERC 2017: 106-109 - [c4]Tom Schram, Quentin Smets, Benjamin Groven, M. H. Heyne, E. Kunnen, A. Thiam, Katia Devriendt, Annelies Delabie, Dennis Lin, M. Lux, Daniele Chiappe, I. Asselberghs, S. Brus, Cedric Huyghebaert, S. Sayan, A. Juncker, Matty Caymax, Iuliana P. Radu:
WS2 transistors on 300 mm wafers with BEOL compatibility. ESSDERC 2017: 212-215 - 2016
- [c3]Nadine Collaert, AliReza Alian, Hiroaki Arimura, Geert Boccardi, Geert Eneman, Jacopo Franco, Tsvetan Ivanov, Dennis Lin, Jérôme Mitard, S. Ramesh, R. Rooyackers, Marc Schaekers, A. Sibaya-Hernandez, S. Sioncke, Quentin Smets, Abhitosh Vais, A. Vandooren, Anabela Veloso, Anne S. Verhulst, Devin Verreck, Niamh Waldron, Amey Walke, Liesbeth Witters, H. Yu, X. Zhou, Aaron Voon-Yew Thean:
Beyond-Si materials and devices for more Moore and more than Moore applications. ICICDT 2016: 1-5 - 2015
- [j2]David M. Steinberg, Dennis Lin:
Construction of Orthogonal Nearly Latin Hypercubes. Qual. Reliab. Eng. Int. 31(8): 1397-1406 (2015) - [c2]Abhitosh Vais, Koen Martens, Jacopo Franco, Dennis Lin, AliReza Alian, Philippe Roussel, S. Sioncke, Nadine Collaert, Aaron Thean, Marc M. Heyns, Guido Groeseneken, Kristin De Meyer:
The relationship between border traps characterized by AC admittance and BTI in III-V MOS devices. IRPS 2015: 5 - 2014
- [j1]Chunmeng Dou, Dennis Lin, Abhitosh Vais, Tsvetan Ivanov, Han-Ping Chen, Koen Martens, Kuniyuki Kakushima, Hiroshi Iwai, Yuan Taur, Aaron Thean, Guido Groeseneken:
Determination of energy and spatial distribution of oxide border traps in In0.53Ga0.47As MOS capacitors from capacitance-voltage characteristics measured at various temperatures. Microelectron. Reliab. 54(4): 746-754 (2014)
2000 – 2009
- 2002
- [c1]S. L. Lung, Dennis Lin, S. S. Chen, Gary Weng, C. L. Liu, S. C. Lai, C. W. Tsai, T. B. Wu, Rich Liu:
Modularized low temperature LNO/PZT/LNO ferroelectric capacitor-over-interconnect (COI) FeRAM for advanced SOC (ASOC) application. CICC 2002: 479-482
Coauthor Index
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