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2020 – today
- 2023
[c5]Woongrae Kim, Chulmoon Jung, Seong Nyuh Yoo, Duckhwa Hong, Jeongjin Hwang, Jungmin Yoon, Oh-Yong Jung, Joonwoo Choi, Sanga Hyun, Mankeun Kang, Sangho Lee, Dohong Kim, Sanghyun Ku, Donhyun Choi, Nogeun Joo, Sangwoo Yoon, Junseok Noh, Byeongyong Go, Cheolhoe Kim, Sunil Hwang, Mihyun Hwang, Seol-Min Yi, Hyungmin Kim, Sanghyuk Heo, Yeonsu Jang, Kyoungchul Jang, Shinho Chu, Yoonna Oh, Kwidong Kim, Junghyun Kim, Soohwan Kim, Jeongtae Hwang, Sangil Park, Junphyo Lee, In-Chul Jeong, Joohwan Cho, Jonghwan Kim:
A 1.1V 16Gb DDR5 DRAM with Probabilistic-Aggressor Tracking, Refresh-Management Functionality, Per-Row Hammer Tracking, a Multi-Step Precharge, and Core-Bias Modulation for Security and Reliability Enhancement. ISSCC 2023: 414-415
2010 – 2019
- 2018
- [b1]Woongrae Kim:
Design and test methodologies with statistical analysis for reliable memory and processor implementations. Georgia Institute of Technology, Atlanta, GA, USA, 2018 - 2017
- [c4]Woongrae Kim, Taizhi Liu, Linda Milor
:
On-line monitoring of system health using on-chip SRAMs as a wearout sensor. IOLTS 2017: 253-258 - 2016
- [j2]Woongrae Kim, Chang-Chih Chen, Dae Hyun Kim, Linda Milor:
Built-In Self-Test Methodology With Statistical Analysis for Electrical Diagnosis of Wearout in a Static Random Access Memory Array. IEEE Trans. Very Large Scale Integr. Syst. 24(7): 2521-2534 (2016) - 2015
- [j1]Taizhi Liu, Chang-Chih Chen, Woongrae Kim, Linda Milor:
Comprehensive reliability and aging analysis on SRAMs within microprocessor systems. Microelectron. Reliab. 55(9-10): 1290-1296 (2015) - [c3]Woongrae Kim, Chang-Chih Chen, Taizhi Liu, Soonyoung Cha, Linda Milor:
Estimation of remaining life using embedded SRAM for wearout parameter extraction. IWASI 2015: 243-248 - [c2]Woongrae Kim, Chang-Chih Chen, Soonyoung Cha, Linda Milor:
MBIST and statistical hypothesis test for time dependent dielectric breakdowns due to GOBD vs. BTDDB in an SRAM array. VTS 2015: 1-6 - 2014
- [c1]Woongrae Kim, Linda Milor:
Built-in self test methodology for diagnosis of backend wearout mechanisms in SRAM cells. VTS 2014: 1-6
Coauthor Index
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