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ORCIDPeter Moens
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2020 – today
- 2024
[c17]Alberto Marcuzzi, M. Avramenko, Carlo De Santi
, Peter Moens, F. Geenen, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini:
Charge Trapping in SiC MOSFETs under Constant Gate Current Stress: Analysis Based on Charge Pumping Measurements. IRPS 2024: 1-5- [c16]Peter Moens, F. Geenen, M. Avramenko, G. Gomez-Garcia, Kevin Matocha:
On the Intrinsic and Extrinsic Reliability Challenges of SiC MOSFETs. IRPS 2024: 1-7 - [c15]M. Avramenko, L. De Schepper, J.-F. Cano, F. Geenen, Peter Moens, Alberto Marcuzzi, Carlo De Santi, Matteo Meneghini:
Threshold Voltage Drift and Recovery of SiC Trench MOSFETs During TDDB Stress. IRPS 2024: 54 - 2023
- [c14]Peter Moens, F. Geenen, L. De Schepper, JF Cano, J. Lettens, S. Maslougkas, J. Franchi, Martin Domeij:
The Concept of Safe Operating Area for Gate Dielectrics: the SiC/SiO2 Case Study. IRPS 2023: 1-5 - 2022
- [c13]Fabrizio Masin, Carlo De Santi, Arno Stockman, J. Lettens, F. Geenen, Gaudenzio Meneghesso, Enrico Zanoni, Peter Moens, Matteo Meneghini:
Analysis and Modeling of Vth Shift in 4H-SiC MOSFETs at Room and Cryogenic-Temperature. IRPS 2022: 5 - 2020
- [c12]Fabrizio Masin, Matteo Meneghini, Eleonora Canato, Alessandro Barbato, Carlo De Santi, Arno Stockman, Abhishek Banerjee, Peter Moens, Enrico Zanoni, Gaudenzio Meneghesso:
Charge Trapping and Stability of E-Mode p-gate GaN HEMTs Under Soft- and Hard- Switching Conditions. IRPS 2020: 1-4
2010 – 2019
- 2019
- [c11]Eleonora Canato, Fabrizio Masin, Matteo Borga, Enrico Zanoni, Matteo Meneghini, Gaudenzio Meneghesso, Arno Stockman, Abhishek Banerjee, Peter Moens:
µs-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate. IRPS 2019: 1-6 - [c10]Peter Moens, Arno Stockman:
A Physical-Statistical Approach to AlGaN/GaN HEMT Reliability. IRPS 2019: 1-6 - [c9]Alaleh Tajalli, Eleonora Canato, Arianna Nardo, Matteo Meneghini, Arno Stockman, Peter Moens, Enrico Zanoni, Gaudenzio Meneghesso:
Impact of Sidewall Etching on the Dynamic Performance of GaN-on-Si E-Mode Transistors. IRPS 2019: 1-6 - 2018
- [j13]Alaleh Tajalli, Eleonora Canato, Arianna Nardo, Matteo Meneghini, Arno Stockman, Peter Moens, Enrico Zanoni, Gaudenzio Meneghesso:
Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors. Microelectron. Reliab. 88-90: 572-576 (2018) - [c8]Arno Stockman, Eleonora Canato, Alaleh Tajalli, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, Peter Moens, Benoit Bakeroot:
On the origin of the leakage current in p-gate AlGaN/GaN HEMTs. IRPS 2018: 4 - 2017
- [j12]Alaleh Tajalli, Matteo Meneghini, Isabella Rossetto, Peter Moens, Abhishek Banerjee, Enrico Zanoni, Gaudenzio Meneghesso:
Field and hot electron-induced degradation in GaN-based power MIS-HEMTs. Microelectron. Reliab. 76-77: 282-286 (2017) - [c7]Arno Stockman, Michael J. Uren, Alaleh Tajalli, Matteo Meneghini, Benoit Bakeroot, Peter Moens:
Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron. ESSDERC 2017: 130-133 - 2015
- [c6]Peter Moens, Abhishek Banerjee, P. Coppens, Aurore Constant, Piet Vanmeerbeek, Z. Li, F. Declercq, L. De Schepper, H. De Vleeschouwer, C. Liu, B. Padmanabhan, W. Jeon, J. Guo, A. Salih, Marnix Tack:
Technology and design of GaN power devices. ESSDERC 2015: 64-67 - [c5]Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni, Piet Vanmeerbeek, Peter Moens:
Trapping induced parasitic effects in GaN-HEMT for power switching applications. ICICDT 2015: 1-4 - [c4]Matteo Meneghini, Riccardo Silvestri, Stefano Dalcanale, Davide Bisi, Enrico Zanoni, Gaudenzio Meneghesso, Piet Vanmeerbeek, Abhishek Banerjee, Peter Moens:
Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors. IRPS 2015: 2 - 2012
- [j11]Abel Fontserè, Amador Pérez-Tomás, Philippe Godignon, José Millán, Herbert De Vleeschouwer, John M. Parsey, Peter Moens:
Wafer scale and reliability investigation of thin HfO2·AlGaN/GaN MIS-HEMTs. Microelectron. Reliab. 52(9-10): 2220-2223 (2012) - [j10]Ana Villamor-Baliarda, Piet Vanmeerbeek, Michele Riccio, Vincenzo d'Alessandro, Andrea Irace, Jaume Roig, David Flores, Peter Moens:
Influence of charge balance on the robustness of trench-based super junction diodes. Microelectron. Reliab. 52(9-10): 2409-2413 (2012) - [c3]Abel Fontserè, Amador Pérez-Tomás, Philippe Godignon, José Millán, J. M. Parsey, Peter Moens:
High voltage low Ron in-situ SiN/Al0.35GaN0.65/GaN-on-Si power HEMTs operation up to 300°C. ESSDERC 2012: 306-309 - 2011
- [j9]Ana Villamor-Baliarda, Piet Vanmeerbeek, Jaume Roig, Peter Moens, David Flores:
Electric field unbalance for robust floating ring termination. Microelectron. Reliab. 51(9-11): 1959-1963 (2011) - 2010
- [j8]R. Charavel, Jaume Roig, S. Mouhoubi, P. Gassot, Filip Bauwens, Piet Vanmeerbeek, B. Desoete, Peter Moens, Eddy De Backer:
Next generation of Deep Trench Isolation for Smart Power technologies with 120 V high-voltage devices. Microelectron. Reliab. 50(9-11): 1758-1762 (2010)
2000 – 2009
- 2008
- [j7]Peter Moens, Geert Van den Bosch:
Reliability assessment of integrated power transistors: Lateral DMOS versus vertical DMOS. Microelectron. Reliab. 48(8-9): 1300-1305 (2008) - [j6]Jaume Roig, B. Desoete, Filip Bauwens, F. Lovadina, Peter Moens:
Thermal resistance assessment in multi-trenched power devices. Microelectron. Reliab. 48(8-9): 1479-1484 (2008) - [c2]Marnix Tack, Peter Moens, Renaud Gillon, Johan Janssens, Stefan Van Roeyen, Jan Sevenhans:
Next Generation Smart Power Technologies - Challenges and Innovations Enabling Complex SoC Integration. ISSCC 2008: 296-297 - 2007
- [j5]K. Reynders, Peter Moens:
Integration of an SCR in an active clamp. Microelectron. Reliab. 47(7): 1054-1059 (2007) - [j4]R. Moonen, Piet Vanmeerbeek, G. Lekens, Ward De Ceuninck, Peter Moens, J. Boutsen:
Lifetime modeling of intrinsic gate oxide breakdown at high temperature. Microelectron. Reliab. 47(9-11): 1389-1393 (2007) - [j3]Peter Coppens, G. Jenicot, Herman Casier, F. De Pestel, F. Depuydt, N. Martens, Peter Moens:
TLP Characterization of large gate width devices. Microelectron. Reliab. 47(9-11): 1462-1467 (2007) - 2004
- [j2]Stefano Aresu, Ward De Ceuninck, Geert Van den Bosch, Guido Groeseneken, Peter Moens, Jean Manca, D. Wojciechowski, P. Gassot:
Evidence for source side injection hot carrier effects on lateral DMOS transistors. Microelectron. Reliab. 44(9-11): 1621-1624 (2004) - [j1]Filip Bauwens, Peter Moens:
Locating hot carrier injection in n-type DeMOS transistors by Charge Pumping and 2D device simulations. Microelectron. Reliab. 44(9-11): 1625-1629 (2004) - [c1]Herman Casier, Peter Moens, Koen Appeltans:
Technology considerations for automotive. ESSCIRC 2004: 37-41
Coauthor Index
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