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ORCIDMicroelectronics Reliability, Volume 67
Volume 67, December 2016
- Márta Rencz:
To the Special section constructed from the selected papers of Thermal investigations of integrated circuits and systems, THERMINIC'15. 1 - Samson Melamed
, Naoya Watanabe, Shunsuke Nemoto, Haruo Shimamoto, Katsuya Kikuchi, Masahiro Aoyagi:
Impact of thinning stacked dies on the thermal resistance of bump-bonded three-dimensional integrated circuits. 2-8 - Mariusz Zubert, Tomasz Raszkowski, Agnieszka Samson, Marcin Janicki, Andrzej Napieralski:
The distributed thermal model of fin field effect transistor. 9-14 - Gilbert De Mey, Tomasz Torzewicz, Piotr Kawka, Andrzej Czerwoniec, Marcin Janicki, Andrzej Napieralski:
Analysis of nonlinear heat exchange phenomena in natural convection cooled electronic systems. 15-20 - Gábor Takács, Péter G. Szabó, György Bognár:
Enhanced thermal characterization method of microscale heatsink structures. 21-28 - E. Liu, Alexander Hanss, Maximilian Schmid, Gordon Elger:
The influence of the phosphor layer as heat source and up-stream thermal masses on the thermal characterization by transient thermal analysis of modern wafer level high power LEDs. 29-37 - Vincenzo d'Alessandro, Alessandro Magnani, Lorenzo Codecasa, Niccolò Rinaldi, Klaus Aufinger:
Advanced thermal simulation of SiGe: C HBTs including back-end-of-line. 38-45 - Lázár Jani, András Poppe:
Multilevel logic and thermal co-simulation. 46-53 - Eric Monier-Vinard, Brice Rogié, Cheikh Tidiane Dia, Valentin Bissuel, Najib Laraqi, Olivier Daniel, Marie-Cécile Kotelon, Aben-Ibrahim Fahad:
Experimental characterization of the predictive thermal behaviour model of a surface-mounted soft magnetic composite inductor. 54-63
- Maike Taddiken, Nico Hellwege, Nils Heidmann, Dagmar Peters-Drolshagen, Steffen Paul:
Analysis of aging effects - From transistor to system level. 64-73 - Basel Halak, Vasileios Tenentes, Daniele Rossi:
The impact of BTI aging on the reliability of level shifters in nano-scale CMOS technology. 74-81 - Omnia Samy, Hamdy Abdelhamid, Yehea Ismail, Abdelhalim Zekry:
A 2D compact model for lightly doped DG MOSFETs (P-DGFETs) including negative bias temperature instability (NBTI) and short channel effects (SCEs). 82-88 - Wenqi Zhang, Tzuo-Li Wang, Yan-hua Huang, Tsu-Ting Cheng, Shih-Yao Chen, Yiying Li, Chun-Hsiang Hsu, Chih-Jui Lai, Wen-Kuan Yeh, Yilin Yang:
Influence of fin number on hot-carrier injection stress induced degradation in bulk FinFETs. 89-93 - Inseok Jang, Wan-Ho Kim, Sie-Wook Jeon, Hyeon Kim, Jae-Pil Kim:
Enhancement of light-emitting diode reliability using silicone microsphere in encapsulant. 94-98 - Peterson R. Agostinho, Odair Lelis Goncalez, Gilson I. Wirth:
Rail to rail radiation hardened operational amplifier in standard CMOS technology with standard layout techniques. 99-103 - Haohao Zhang, Jinshun Bi, Haibin Wang, Hongyang Hu, Jin Li, Lanlong Ji, Ming Liu:
Study of total ionizing dose induced read bit errors in magneto-resistive random access memory. 104-110 - Stoyan Stoyanov, Chris Bailey, Georgios Tourloukis:
Similarity approach for reducing qualification tests of electronic components. 111-119 - Ming-Yi Tsai, C. H. Lin, K. F. Chuang, Y. H. Chang, C. T. Wu, S. C. Hu:
Failure and stress analysis of through-aluminum-nitride-via substrates during thermal reliability tests for high power LED applications. 120-128 - Junjie Shen, Pengfei Chen, Lei Su, Tielin Shi, Zirong Tang, Guanglan Liao:
X-ray inspection of TSV defects with self-organizing map network and Otsu algorithm. 129-134 - Ee-Hua Wong, J. Chrisp, C. S. Selvanayagam, S. K. W. Seah:
Constitutive modeling of solder alloys for drop-impact applications. 135-142 - Kyungbae Park, Donghyuk Yun, Sanghyeon Baeg:
Statistical distributions of row-hammering induced failures in DDR3 components. 143-149 - Andres F. Gomez, Felipe Lavratti, Guilherme Medeiros Machado, M. Sartori, Letícia Maria Veiras Bolzani, Víctor H. Champac, Fabian Vargas:
Effectiveness of a hardware-based approach to detect resistive-open defects in SRAM cells under process variations. 150-158 - Weiliang Wang, Karim Khan, Xingye Zhang, Haiming Qin, Jun Jiang, Lijing Miao, Kemin Jiang, Pengjun Wang, Mingzhi Dai, Junhao Chu:
Corrigendum to "A subgap density of states modeling for the transient characteristics in oxide-based thin-film transistors" [Microelectron. Reliab. 60 (2016) 67-69]. 159
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