Microelectronics Reliability, Volume 46

Volume 46, Number 1, January 2006

Invited Papers

• 
  Vincent Huard, Mickael Denais, C. R. Parthasarathy:
  NBTI degradation: From physical mechanisms to modelling. 1-23
• 
  Yeong-Chang Chou, Denise Leung, Ronald Grundbacher, Richard Lai, Quin Kan, P. H. Liu, David Eng, Thomas R. Block, Aaron K. Oki:
  Gate metal interdiffusion induced degradation in space-qualified GaAs PHEMTs. 24-40
• 
  J. D. Wu, P. J. Zheng, C. W. Lee, S. C. Hung, J. J. Lee:
  A study in flip-chip UBM/bump reliability with effects of SnPb solder composition. 41-52
• 
  Michael G. Pecht, Yuliang Deng:
  Electronic device encapsulation using red phosphorus flame retardants. 53-62
• 
  Marty Agostinelli, Shing Lau, Sangwoo Pae, Phil Marzolf, Harish Muthali, Steve Jacobs:
  PMOS NBTI-induced circuit mismatch in advanced technologies. 63-68

Research Papers

• 
  S. Chatterjee, Yue Kuo, J. Lu, J.-Y. Tewg, P. Majhi:
  Electrical reliability aspects of HfO₂ high-k gate dielectrics with TaN metal gate electrodes under constant voltage stress. 69-76
• 
  Bradford L. Hunter, Brian K. Butka:
  Damped transient power clamps for improved ESD protection of CMOS. 77-85
• 
  Hamid R. Zarandi, Seyed Ghassem Miremadi:
  A fault-tolerant cache architecture based on binary set partitioning. 86-99
• 
  Hyong Tae Kim, Chang Seop Song, Hae Jeong Yang:
  Algorithm for automatic alignment in 2D space by object transformation. 100-108
• 
  Jaroslaw Legierski, Boguslaw Wiecek, Gilbert De Mey:
  Measurements and simulations of transient characteristics of heat pipes. 109-115
• 
  Zoran Radivojevic, Ivan Kassamakov, Markku Oinonen, H. Saarikko, Henri Seppänen, Pasi Vihinen:
  Transient IR imaging of light and flexible microelectronic devices. 116-123
• 
  Amir Rajabzadeh, Seyed Ghassem Miremadi:
  Transient detection in COTS processors using software approach. 124-133
• 
  Marion K. Matters-Kammerer, U. Mackens, Klaus Reimann, Rainer Pietig, D. Hennings, B. Schreinemacher, R. Mauczok, S. Gruhlke, C. Martiny:
  Material properties and RF applications of high k and ferrite LTCC ceramics. 134-143
• 
  Tanja Braun, Karl-Friedrich Becker, Mathias Koch, Volker Bader, Rolf Aschenbrenner, Herbert Reichl:
  High-temperature reliability of Flip Chip assemblies. 144-154
• 
  K. M. Chen, D. S. Jiang, N. H. Kao, J. Y. Lai:
  Effects of underfill materials on the reliability of low-K flip-chip packaging. 155-163

Research Notes

• 
  Yao Zhao, Mingzhen Xu, Changhua Tan:
  Effect of reverse substrate bias on ultra-thin gate oxide n-MOSFET degradation under different stress modes. 164-168
• 
  Alina Caddemi, Giovanni Crupi, Nicola Donato:
  Temperature effects on DC and small signal RF performance of AlGaAs/GaAs HEMTs. 169-173
• 
  Bjorn Vermeersch, Gilbert De Mey:
  Thermal impedance plots of micro-scaled devices. 174-177
• 
  J. F. Luo, Yuan Ji, T. X. Zhong, Y. Q. Zhang, J. Z. Wang, J. P. Liu, N. H. Niu, J. Han, X. Guo, G. D. Shen:
  EBSD measurements of elastic strain fields in a GaN/sapphire structure. 178-182
• 
  Jung-Hyuk Koh, Tae-geun Kim:
  Reliability of Pb(Mg, Nb)O₃-Pb(Zr, Ti)O₃ multilayer ceramic piezoelectric actuators by Weibull method. 183-188
• 
  Andrzej Szymanski, Ewa Kurjata-Pfitzner:
  Effects of package and process variation on 2.4GHz analog integrated circuits. 189-193

Book Reviews

• 
  Mile K. Stojcev:
  Stephen Brown Zvonko Vranesic, Fundamental of Digital Logic with Verilog Design, McGraw Hill, Boston, 2004, Hardcover, pp 844, plus XX, ISBN 0-07-121359-7. 194-195
• 
  Mile K. Stojcev:
  John P. Hayes, Computer Architecture and Organization, Third ed., McGraw-Hill Book Company, Inc., Boston, 1988, Softcover, pp 604, plus XIV, ISBN 0-07-115997-5. 196-197
• 
  Mile K. Stojcev:
  S. Sutherland, S. Davidman and P. Flake, System Verilog for Design: A Guide to Using System Verilog for Hardware Design and Modeling Hardcover, Kluwer Academic Publishers, Norwell, MA (2004) ISBN 1-4020-7530-8 pp 374, plus XXVIII, euro 119. 198-199

Volume 46, Numbers 2-4, February-April 2006

Invited Papers

• 
  Sasan Naseh, M. Jamal Deen, Chih-Hung Chen:
  Hot-carrier reliability of submicron NMOSFETs and integrated NMOS low noise amplifiers. 201-212
• 
  Chao-Kun Hu, Lynne M. Gignac, R. Rosenberg:
  Electromigration of Cu/low dielectric constant interconnects. 213-231
• 
  Fen Chen, J. Gill, Dave Harmon, T. Sullivan, A. Strong, B. Li, H. Rathore, Daniel C. Edelstein:
  Determination of the thermal conductivity of composite low-k dielectrics for advanced interconnect structures. 232-243
• 
  S. Manian Ramkumar, Reza Ghaffarian, Arun Varanasi:
  Lead-free 0201 manufacturing, assembly and reliability test results. 244-262
• 
  Mitsuo Fukuda:
  Optical source reliability in recent optical fiber transmission systems and consumer electronics. 263-269
• 
  James H. Stathis, Sufi Zafar:
  The negative bias temperature instability in MOS devices: A review. 270-286

Research Papers

• 
  M. Ossaimee, Khaled Kirah, W. Fikry, A. Girgis, O. A. Omar:
  Simplified quantitative stress-induced leakage current (SILC) model for MOS devices. 287-292
• 
  Alexander Zemliak, Roque De La Cruz:
  Numerical analysis of a double avalanche region IMPATT diode on the basis of nonlinear model. 293-300
• 
  Kun-Hsien Lin, Ming-Dou Ker:
  Electrostatic discharge protection scheme without leakage current path for CMOS IC operating in power-down-mode condition on a system board. 301-310
• 
  Argyrios T. Hatzopoulos, Dimitrios H. Tassis, N. Arpatzanis, C. A. Dimitriadis, G. Kamarinos:
  Effects of hot carriers in offset gated polysilicon thin-film transistors. 311-316
• 
  A. M. Albadri, Ronald D. Schrimpf, Kenneth F. Galloway, D. Greg Walker:
  Single event burnout in power diodes: Mechanisms and models. 317-325
• 
  Mohammadreza Keimasi, Sanka Ganesan, Michael G. Pecht:
  Low temperature electrical measurements of silicon bipolar monolithic microwave integrated circuit (MMIC) amplifiers. 326-334
• 
  K. M. Chen, B. C. Wu, K. H. Tang, F. Y. Cheng, N. H. Kao, J. Y. Lai:
  An investigation into the effects of probing and wire bonding stress on the reliability of BOAC. 335-342
• 
  C. Pramanik, Tarikul Islam, Hiranmay Saha:
  Temperature compensation of piezoresistive micro-machined porous silicon pressure sensor by ANN. 343-351
• 
  Andrzej Dziedzic, Andrzej Kolek, Waleed Ehrhardt, Heiko Thust:
  Advanced electrical and stability characterization of untrimmed and variously trimmed thick-film and LTCC resistors. 352-359
• 
  Sanka Ganesan, Michael G. Pecht, Sharon Ling:
  Use of high temperature operating life data to mitigate risks in long-duration space applications that deploy commercial-grade plastic encapsulated semiconductor devices. 360-366
• 
  Mohd Khairuddin Md Arshad, Ibrahim Ahmad, Azman Jalar, Ghazali Omar:
  The surface characteristics of under bump metallurgy (UBM) in electroless nickel immersion gold (ENIG) deposition. 367-379
• 
  Jamil A. Wakil:
  Thermal performance impacts of heat spreading lids on flip chip packages: With and without heat sinks. 380-385
• 
  Yi-Ming Jen, Ying-Lung Wu, Chih-Kai Fang:
  Impact of the number of chips on the reliability of the solder balls for wire-bonded stacked-chip ball grid array packages. 386-399
• 
  Daniel N. Donahoe, Michael G. Pecht, Isabel K. Lloyd, Sanka Ganesan:
  Moisture induced degradation of multilayer ceramic capacitors. 400-408
• 
  Y. L. Zhang, D. X. Q. Shi, Wei Zhou:
  Reliability study of underfill/chip interface under accelerated temperature cycling (ATC) loading. 409-420
• 
  Amy S. Fleischer, Ute Troppenz, Michael Hamacher, Werner John:
  Thermal analysis of bond layer influence on performance of an all-active vertically coupled, microring resonating laser. 421-431
• 
  Periannan Arulvanan, Zhaowei Zhong, Xunqing Shi:
  Effects of process conditions on reliability, microstructure evolution and failure modes of SnAgCu solder joints. 432-439
• 
  Kuo-Ming Chen, Kuo-Hsiung Houng, Kuo-Ning Chiang:
  Thermal resistance analysis and validation of flip chip PBGA packages. 440-448
• 
  Cheng-Li Chuang, Jong-Ning Aoh, Rong-Fong Din:
  Oxidation of copper pads and its influence on the quality of Au/Cu bonds during thermosonic wire bonding process. 449-458
• 
  YoungBae Kim, Hiroshi Noguchi, Masazumi Amagai:
  Vibration fatigue reliability of BGA-IC package with Pb-free solder and Pb-Sn solder. 459-466
• 
  Sarangapani Murali, Narasimalu Srikanth, Charles J. Vath III:
  Effect of wire diameter on the thermosonic bond reliability. 467-475
• 
  Ming-Yi Tsai, W. C. Chiang, T. M. Liu, G. H. Hsu:
  Thermal deformation measurements and predictions of MAP-BGA electronic packages. 476-486
• 
  Changsoo Jang, Seongyoung Han, Hangyu Kim, Sayoon Kang:
  A numerical failure analysis on lead breakage issues of ultra fine pitch flip chip-on-flex and tape carrier packages during chip/film assembly process. 487-495
• 
  Michael C. Larson, Melody A. Verges, Xia Liu:
  Residual compression in area array packages induced by underfill shrinkage. 496-502
• 
  Jongwoo Park, John Osenbach:
  Processability and reliability of epoxy adhesive used in microelectronic devices linked to effects of degree of cure and damp heat aging. 503-511
• 
  Se Young Yang, Young-Doo Jeon, Soon-Bok Lee, Kyung-Wook Paik:
  Solder reflow process induced residual warpage measurement and its influence on reliability of flip-chip electronic packages. 512-522
• 
  Chih-Tang Peng, Chia-Tai Kuo, Kuo-Ning Chiang, Terry Ku, Kenny Chang:
  Experimental characterization and mechanical behavior analysis of intermetallic compounds of Sn-3.5Ag lead-free solder bump with Ti/Cu/Ni UBM on copper chip. 523-534
• 
  Jong-Woong Kim, Dae-Gon Kim, Seung-Boo Jung:
  Evaluation of displacement rate effect in shear test of Sn-3Ag-0.5Cu solder bump for flip chip application. 535-542
• 
  C. D. Breach, F. Wulff, C. W. Tok:
  An unusual mechanical failure mode in gold ballbonds at 50mum pitch due to degradation at the Au-Au₄Al interface during ageing in air at 175degreeC. 543-557
• 
  Yuqi Wang, K. H. Low, John H. L. Pang, Kay Hiang Hoon, F. X. Che, Y. S. Yong:
  Modeling and simulation for a drop-impact analysis of multi-layered printed circuit boards. 558-573
• 
  Yan Qi, Rex Lam, Hamid R. Ghorbani, Polina Snugovsky, Jan K. Spelt:
  Temperature profile effects in accelerated thermal cycling of SnPb and Pb-free solder joints. 574-588
• 
  Woon-Seong Kwon, Suk-Jin Ham, Kyung-Wook Paik:
  Deformation mechanism and its effect on electrical conductivity of ACF flip chip package under thermal cycling condition: An experimental study. 589-599
• 
  Fei Su, Kerm Sin Chian, Sung Yi:
  An optical characterization technique for hygroscopic expansion of polymers and plastic packages. 600-609
• 
  Lei Han, Fuliang Wang, Wenhu Xu, Jue Zhong:
  Bondability window and power input for wire bonding. 610-615
• 
  W. Dauksher, P. Marcoux, G. Castleman:
  A methodology for the calculation of stress migration in die-level interconnects. 616-625
• 
  Chang-Lin Yeh, Yi-Shao Lai:
  Support excitation scheme for transient analysis of JEDEC board-level drop test. 626-636

Research Notes

• 
  Li Chen, O. J. Guy, D. Doneddu, S. G. J. Batcup, S. P. Wilks, P. A. Mawby, T. Bouchet, F. Torregrosa:
  Report on 4H-SiC JTE Schottky diodes. 637-640
• 
  V. S. Pershenkov, A. D. Tremasov, V. V. Belyakov, A. U. Razvalyaev, V. S. Mochkin:
  X-ray ion mobility spectrometer. 641-644
• 
  Yi-Shao Lai, Ping-Feng Yang, Chang-Lin Yeh:
  Experimental studies of board-level reliability of chip-scale packages subjected to JEDEC drop test condition. 645-650

Book Reviews

• 
  Mile K. Stojcev:
  Sachin Sapatnekar, Timing, Kluwer Academic Publishers, Hardcover, ISBN 1-4020-7671-1, pp 294, plus IX. 651-652
• 
  Mile K. Stojcev:
  Low Power Electronics Design, Christian Pignet, Editor, CRC Press, Boca Raton, 2005, Hardcover, pp 854, plus 18, ISBN 0-8493-1941-2. 653-654

Volume 46, Numbers 5-6, May-June 2006

Special Section: EOS / ESD Symposium 2004

• 
  Natarajan Mahadeva Iyer:
  Introduction to special section on selected papers from EOS/ESD Symposium 2004. 655
• 
  Charvaka Duvvury, Robert Steinhoff, Gianluca Boselli, Vijay Reddy, Hans Kunz, Steve Marum, Roger Cline:
  Gate oxide failures due to anomalous stress from HBM ESD testers. 656-665
• 
  M. Etherton, Ning Qu, J. Willemen, Wolfgang Wilkening, S. Mettler, Mariano Dissegna, R. Stella, L. Zullino, A. Andreini, Horst A. Gieser:
  Study of CDM specific effects for a smart power input protection structure. 666-676
• 
  Bart Keppens, Markus P. J. Mergens, Cong Son Trinh, Christian C. Russ, Benjamin Van Camp, Koen G. Verhaege:
  ESD protection solutions for high voltage technologies. 677-688
• 
  Krzysztof Domanski, B. Póltorak, S. Bargstädt-Franke, Wolfgang Stadler, Waclaw Bala:
  Physical fundamentals of external transient latch-up and corrective actions. 689-701
• 
  Steven Thijs, M. Natarajan Iyer, Dimitri Linten, Wutthinan Jeamsaksiri, T. Daenen, Robin Degraeve, Andries J. Scholten, Stefaan Decoutere, Guido Groeseneken:
  Implementation of plug-and-play ESD protection in 5.5GHz 90nm RF CMOS LNAs - Concepts, constraints and solutions. 702-712

Introductory Invited Paper

• 
  Ranbir Singh:
  Reliability and performance limitations in SiC power devices. 713-730

Research Papers

• 
  Francisco J. García-Sánchez, Adelmo Ortiz-Conde, Juan Muci:
  Understanding threshold voltage in undoped-body MOSFETs: An appraisal of various criteria. 731-742
• 
  Maciej Wolborski, Mietek Bakowski, Armando Ortiz, Viljami Pore, Adolf Schöner, Mikko Ritala, Markku Leskelä, Anders Hallén:
  Characterisation of the Al₂O₃ films deposited by ultrasonic spray pyrolysis and atomic layer deposition methods for passivation of 4H-SiC devices. 743-755
• 
  Takayoshi Katahira, Ilkka Kartio, Hiroshi Segawa, Michimasa Takahashi, Katsumi Sagisaka:
  Vertically high-density interconnection for mobile application. 756-762
• 
  M. Y. Pan, Manoj Gupta, Andrew A. O. Tay, Kripesh Vaidyanathan:
  Development of bulk nanostructured copper with superior hardness for use as an interconnect material in electronic packaging. 763-767
• 
  Oliver Aubel, Eberhard Bugiel, Dietmar Krüger, Wolfgang Hasse, Martina Hommel:
  Investigation of the influence of thermal treatment on interconnect-barrier interfaces in copper metallization systems. 768-773
• 
  Xu Chen, Jun Zhang, Chunlei Jiao, Yanmin Liu:
  Effects of different bonding parameters on the electrical performance and peeling strengths of ACF interconnection. 774-785
• 
  Yannick Guhel, Bertrand Boudart, E. Delos, Marianne Germain, Z. Bougrioua:
  Comparative studies of Pt and Ir schottky contacts on undoped Al_0.36Ga_0.64N. 786-793
• 
  Amy S. Fleischer, Li-Hsin Chang, Barry C. Johnson:
  The effect of die attach voiding on the thermal resistance of chip level packages. 794-804
• 
  Zunxian Yang, Ying Yu, Xinxin Li, Haifei Bao:
  Nano-mechanical electro-thermal probe array used for high-density storage based on NEMS technology. 805-810
• 
  Guang-Ming Zhang, David M. Harvey, Derek R. Braden:
  Resolution improvement of acoustic microimaging by continuous wavelet transform for semiconductor inspection. 811-821
• 
  W. Dreyer, F. Duderstadt, S. Eichler, M. Jurisch:
  Stress analysis and bending tests for GaAs wafers. 822-835
• 
  Hoh Huey Jiun, Ibrahim Ahmad, Azman Jalar, Ghazali Omar:
  Effect of wafer thinning methods towards fracture strength and topography of silicon die. 836-845
• 
  Tong Fang, Michael D. Osterman, Michael G. Pecht:
  Statistical analysis of tin whisker growth. 846-849
• 
  M. Yamashita, K. Suganuma:
  Improvement in high-temperature degradation by isotropic conductive adhesives including Ag-Sn alloy fillers. 850-858
• 
  Yi-Shao Lai:
  On solution schemes for time-independent thermomechanical analysis for structures containing polymeric materials. 859-863
• 
  Bo Tao, Yiping Wu, Han Ding, You-Lun Xiong:
  A quantitative method of reliability estimation for surface mount solder joints based on heating factor Q_eta. 864-872
• 
  Hamid R. Ghorbani, Jan K. Spelt:
  Interfacial thermal stresses in solder joints of leadless chip resistors. 873-884
• 
  Chang-Lin Yeh, Yi-Shao Lai:
  Transient fracturing of solder joints subjected to displacement-controlled impact loads. 885-895
• 
  W.-M. Chen, Paul McCloskey, S. Cian O'Mathuna:
  Isothermal aging effects on the microstructure and solder bump shear strength of eutectic Sn37Pb and Sn3.5Ag solders. 896-904
• 
  Jeong-Won Yoon, Seung-Boo Jung:
  High temperature reliability and interfacial reaction of eutectic Sn-0.7Cu/Ni solder joints during isothermal aging. 905-914
• 
  Yi-Shao Lai, Chin-Li Kao:
  Characteristics of current crowding in flip-chip solder bumps. 915-922
• 
  Yasuyuki Morita, Kazuo Arakawa, Mitsugu Todo, Masayuki Kaneto:
  Experimental study on the thermo-mechanical effects of underfill and low-CTE substrate in a flip-chip device. 923-929
• 
  Ee-Hua Wong, Yiu-Wing Mai:
  New insights into board level drop impact. 930-938
• 
  Cher Ming Tan, Zhenghao Gan, Tai Chong Chai:
  Feasibility study of the application of voltage contrast to printed circuit board. 939-948
• 
  Adam Dabrowski, Rafal Dlugosz, Pawel Pawlowski:
  Integrated CMOS GSM baseband channel selecting filters realized using switched capacitor finite impulse response technique. 949-958
• 
  Amir Rajabzadeh, Seyed Ghassem Miremadi:
  CFCET: A hardware-based control flow checking technique in COTS processors using execution tracing. 959-972
• 
  Jing Lee:
  A reliability-driven placement procedure based on thermal-force model. 973-983
• 
  Jonathan Jilesen, F. S. Lien, H. Ahn:
  Investigation of increased performance of close series stacked tube axial fans due to inclusion of diffuser element. 984-993

Research Notes

• 
  Hichame Maanane, Mohamed Masmoudi, Jérôme Marcon, Mohamed Ali Belaïd, Karine Mourgues, C. Tolant, K. Ketata, Philippe Eudeline:
  Study of RF N^- LDMOS critical electrical parameter drifts after a thermal and electrical ageing in pulsed RF. 994-1000
• 
  Zhilin Sun, Weifeng Sun, Yangbo Yi, Longxing Shi:
  Study of the power capability of LDMOS and the improved methods. 1001-1005
• 
  H.-Y. Kang, Amy H. I. Lee:
  Critical dimension control in photolithography based on the yield by a simulation program. 1006-1012
• 
  Bruno Foucher, J. Tomas, F. Mounsi, M. Jeremias:
  Life margin assessment with Physics of Failure Tools application to BGA packages. 1013-1018
• 
  Krystyna Siekierska, Pawel Fras, Artur Kokoszka, Tomasz Kostienko, Norbert Lugowski, Dariusz Obrebski, Adam Pawlak, Piotr Penkala, Dariusz Stachanczyk, Marek Szlezak:
  Distributed collaborative design of IP components in the TRMS environment. 1019-1024

Book Review

• 
  Mile K. Stojcev:
  F. Mayer-Linderberg, Dedicated Digital Processors: Methods in Hardware/Software System Design, John Wiley & Sons, Ltd., Chichester (2004) ISBN 0-470-84444-2 Hardcover, pp 302, plus XI. 1025-1026

Volume 46, Number 7, July 2006

Research papers

• 
  Valeriu Filip, Hei Wong, D. Nicolaescu:
  Definition of curve fitting parameter to study tunneling and trapping of electrons in Si/ultra-thin SiO₂/metal structures. 1027-1034
• 
  S. E. Tyaginov, M. I. Vexler, A. F. Shulekin, I. V. Grekhov:
  The post-damage behavior of a MOS tunnel emitter transistor. 1035-1041
• 
  Shih-Hung Chen, Ming-Dou Ker:
  Failure analysis and solutions to overcome latchup failure event of a power controller IC in bulk CMOS technology. 1042-1049
• 
  A. Emre Yarimbiyik, Harry A. Schafft, Richard A. Allen, Mona E. Zaghloul, David L. Blackburn:
  Modeling and simulation of resistivity of nanometer scale copper. 1050-1057
• 
  Henry Y. Lu, Haluk Balkan, K. Y. Simon Ng:
  Microstructure evolution of the Sn-Ag-y%Cu interconnect. 1058-1070
• 
  Päivi H. Karjalainen, Eero Ristolainen:
  Balancing temperature dependence of on-wafer SOS inductors. 1071-1079
• 
  Kyung-Seob Kim, C. H. Yu, J. M. Yang:
  Tin whisker formation of lead-free plated leadframes. 1080-1086
• 
  Dae Whan Kim, Byung-Seon Kong:
  The effect of hygro-mechanical and thermo-mechanical stress on delamination of gold bump. 1087-1094
• 
  Miguel Ullán, Manuel Lozano, Mokhtar Chmeissani, G. Blanchot, Enric Cabruja, J. García, M. Maiorino, Ricardo Martínez, Giulio Pellegrini, Carles Puigdengoles:
  Test structure assembly for bump bond yield measurement on high density flip chip technologies. 1095-1100
• 
  Yong Ding, Jang-Kyo Kim, Pin Tong:
  Effects of bonding force on contact pressure and frictional energy in wire bonding. 1101-1112
• 
  M. Yamashita, K. Suganuma:
  Degradation by Sn diffusion applied to surface mounting with Ag-epoxy conductive adhesive with joining pressure. 1113-1118
• 
  Dong-Jun Lee, Hyo S. Lee:
  Major factors to the solder joint strength of ENIG layer in FC BGA package. 1119-1127
• 
  Xia Liu, Valmiki K. Sooklal, Melody A. Verges, Michael C. Larson:
  Experimental study and life prediction on high cycle vibration fatigue in BGA packages. 1128-1138
• 
  Chi-Hui Chien, Thaiping Chen, Yung-Chang Chen, Yii-Tay Chiou, Chi-Chang Hsieh, Yii-Der Wu:
  Stability of the warpage in a PBGA package subjected to hygro-thermal loading. 1139-1147
• 
  Hua Lu, Helen Shi, Ming Zhou:
  Thermally induced deformation of solder joints in real packages: Measurement and analysis. 1148-1159
• 
  Desmond Y. R. Chong, F. X. Che, John H. L. Pang, Kellin Ng, Jane Y. N. Tan, Patrick T. H. Low:
  Drop impact reliability testing for lead-free and lead-based soldered IC packages. 1160-1171
• 
  Chang-Lin Yeh, Yi-Shao Lai, Chin-Li Kao:
  Evaluation of board-level reliability of electronic packages under consecutive drops. 1172-1182
• 
  Y. H. Hung, M. L. Huang, C. H. Chang:
  Optimizing the controller IC for micro HDD process based on Taguchi methods. 1183-1188
• 
  Kuen-Suan Chen, Chin-Hsin Wang, H. T. Chen:
  A MAIC approach to TFT-LCD panel quality improvement. 1189-1198
• 
  Jianhui Xing, Hong Wang, Shiyuan Yang:
  Constructing IP cores' transparency paths for SoC test access using greedy search. 1199-1208

Research note

• 
  Li Chen, M. M. El-Gomati:
  Stabilized emission from micro-field emitter for electron microscopy. 1209-1213

Book review

• 
  Mile K. Stojcev:
  R. Jacob Baker, CMOS Circuit Design, Layout, and Simulation (second ed.), Wiley Interscience & IEEE Press (2005) ISBN 0-471-70055-X Hardcover, pp 1039, plus XXXIII. 1214-1215

Volume 46, Number 8, August 2006

Microelectronic Reliability : 2005 ROCS Workshop

• 
  Peter Ersland, Roberto Menozzi:
  Editorial. 1217
• 
  William J. Roesch:
  Historical review of compound semiconductor reliability. 1218-1227
• 
  Charles S. Whitman, Terri M. Gilbert, Ann M. Rahn, Jennifer A. Antonell:
  Determining factors affecting ESD failure voltage using DOE. 1228-1237
• 
  William J. Roesch:
  Compound semiconductor activation energy in humidity. 1238-1246
• 
  Sameer Singhal, T. Li, Apurva Chaudhari, Allen W. Hanson, Robert J. Therrien, Wayne Johnson, Walter Nagy, J. Marquart, Pradeep Rajagopal, John C. Roberts:
  Reliability of large periphery GaN-on-Si HFETs. 1247-1253
• 
  Shivarajiv Somisetty, Peter Ersland, Xinxing Yang, Jason Barrett:
  Reliability investigation and characterization of failure modes in Schottky diodes. 1254-1260
• 
  Charles S. Whitman:
  Reliability results of HBTs with an InGaP emitter. 1261-1271
• 
  Craig A. Gaw, Thomas Arnold, Robert Martin, Lisa Zhang, Dragan Zupac:
  Evaluation of SiGe: C HBT intrinsic reliability using conventional and step stress methodologies. 1272-1278
• 
  P. J. van der Wel, S. J. C. H. Theeuwen, J. A. Bielen, Y. Li, R. A. van den Heuvel, J. G. Gommans, F. van Rijs, P. Bron, H. J. F. Peuscher:
  Wear out failure mechanisms in aluminium and gold based LDMOS RF power applications. 1279-1284

Research Papers

• 
  Javier A. Salcedo, Juin J. Liou, Muhammad Yaqub Afridi, Allen R. Hefner:
  On-chip electrostatic discharge protection for CMOS gas sensor systems-on-a-chip (SoC). 1285-1294
• 
  Amit Kumta, Rusli, Chin-Che Tin, J. Ahn:
  Design of field-plate terminated 4H-SiC Schottky diodes using high-k dielectrics. 1295-1302
• 
  A. A. Dakhel:
  Study of dc conduction mechanisms in dysprosium-manganese oxide insulator thin films grown on Si substrates. 1303-1308
• 
  Hung Son Nguyen, Z. H. Gan, Zhe Chen, V. Chandrasekar, K. Prasad, S. G. Mhaisalkar, Ning Jiang:
  Reliability studies of barrier layers for Cu/PAE low-k interconnects. 1309-1314
• 
  Petar Ratchev, Serguei Stoukatch, Bart Swinnen:
  Mechanical reliability of Au and Cu wire bonds to Al, Ni/Au and Ni/Pd/Au capped Cu bond pads. 1315-1325
• 
  Ching-Yang Chen, Yung-Ching Chao, De-Shin Liu, Zhen-Wei Zhuang:
  Design of a novel chip on glass package solution for CMOS image sensor device. 1326-1334
• 
  T. Kangasvieri, Olli Nousiainen, Jussi Putaala, Risto Rautioaho, J. Vähäkangas:
  Reliability and RF performance of BGA solder joints with plastic-core solder balls in LTCC/PWB assemblies. 1335-1347
• 
  Hongtao Chen, C. Q. Wang, M. Y. Li:
  Numerical and experimental analysis of the Sn3.5Ag0.75Cu solder joint reliability under thermal cycling. 1348-1356
• 
  Yi-Shao Lai, Chin-Li Kao:
  Electrothermal coupling analysis of current crowding and Joule heating in flip-chip packages. 1357-1368
• 
  C. T. Pan, P. J. Cheng, C. K. Yen, C. C. Hsieh:
  Application of polyimide to bending-mode microactuators with Ni/Fe and Fe/Pt magnet. 1369-1381
• 
  Vanco B. Litovski, Miona Andrejevic, Mark Zwolinski:
  Analogue electronic circuit diagnosis based on ANNs. 1382-1391

Research Note

• 
  M. Y. Yan, King-Ning Tu, A. V. Vairagar, S. G. Mhaisalkar, Ahila Krishnamoorthy:
  A direct measurement of electromigration induced drift velocity in Cu dual damascene interconnects. 1392-1395

Book reviews

• 
  Mile K. Stojcev:
  Alfredo Benso, Paolo Prinetto, editors, Fault injection techniques and tools for embedded systems reliability and evaluation, Kluwer Academic Publishers, Boston, 2003. Hardcover, pp 241, plus XIV, ISBN 1-4020-7589-8. 1396-1397
• 
  Mile K. Stojcev:
  Sachin Sapatnekar, Timing, Kluwer Academic Publishers, Hardcover, pp 294, plus IX, ISBN 1-4020-7671-1. 1398-1399

Volume 46, Numbers 9-11, September-November 2006

Proceedings of the 17th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis. Wuppertal, Germany 3rd-6th October 2006

• 
  L. J. Balk, W. H. Gerling, E. Wolfgang:
  Editorial. 1401-1402

Keynote

• 
  A. J. van Roosmalen, G. Q. Zhang:
  Reliability challenges in the nanoelectronics era. 1403-1414

Best paper of Japanese RCJ Reliability Symposium

• 
  Hideaki Tsuchiya, Shinji Yokogawa:
  Electromigration lifetimes and void growth at low cumulative failure probability. 1415-1420

Topic A: Reliability for Transportation

• 
  Mogens Blanke, Jesper Sandberg Thomsen:
  Electrical steering of vehicles - fault-tolerant analysis and design. 1421-1432
• 
  M. Wagner, W. Unger, Wolfgang Wondrak:
  Part average analysis - A tool for reducing failure rates in automotive electronics. 1433-1438
• 
  P. Tanduo, Luca Cola, S. Testa, M. Menchise, A. Mervic:
  Read disturb in flash memories: reliability case. 1439-1444
• 
  Olivier Briat, Walid Lajnef, Jean-Michel Vinassa, Eric Woirgard:
  Power cycling tests for accelerated ageing of ultracapacitors. 1445-1450
• 
  Stéphane Charruau, Fabrice Guérin, Jesus Hernández Dominguez, Julie Berthon:
  Reliability estimation of aeronautic component by accelerated tests. 1451-1457
• 
  Liming Gao, Christian Burmer, Frank Siegelin:
  ATPG scan logic failure analysis: a case study of logic ICs - fault isolation, defect mechanism identification and yield improvement. 1458-1463

Topic B: Physical Modeling and Simulation for Reliability Prediction

• 
  C. R. Parthasarathy, Mickael Denais, Vincent Huard, G. Ribes, David Roy, Chloe Guérin, F. Perrier, E. Vincent, Alain Bravaix:
  Designing in reliability in advanced CMOS technologies. 1464-1471
• 
  R. L. J. M. Ubachs, Olaf van der Sluis, W. D. van Driel, G. Q. Zhang:
  Multiscale modelling of multilayer substrates. 1472-1477
• 
  Andrea Chimenton, Fernanda Irrera, Piero Olivo:
  Improving performance and reliability of NOR-Flash arrays by using pulsed operation. 1478-1481
• 
  Christophe Entringer, Philippe Flatresse, Philippe Galy, Florence Azaïs, Pascal Nouet:
  Electro-thermal short pulsed simulation for SOI technology. 1482-1485

Topic C: Advanced Failure Analysis: Defect Detection and Analysis

• 
  Christian Burmer, Siegfried Görlich:
  Failure analyses for debug and ramp-up of modern IC's. 1486-1497
• 
  Rudolf Schlangen, Peter Sadewater, Uwe Kerst, Christian Boit:
  Contact to contacts or silicide by use of backside FIB circuit edit allowing to approach every active circuit node. 1498-1503
• 
  Radu Ispasoiu, Tom Crawford, Brian Johnston, Chris Shaw, Steven Kasapi, Jason Goertz, Olivier Rinaudo, Peter Ouimet:
  Reduction of the acquisition time for CMOS time-resolved photon emission by optimized IR detection. 1504-1507
• 
  O. Breitenstein, Frank Altmann, Thorsten Riediger, D. Karg, V. Gottschalk:
  Lock-in thermal IR imaging using a solid immersion lens. 1508-1513
• 
  Alexandre Douin, Vincent Pouget, M. De Matos, Dean Lewis, Philippe Perdu, Pascal Fouillat:
  Time resolved imaging using synchronous picosecond Photoelectric Laser Stimulation. 1514-1519
• 
  Jean-Michel Rampnoux, H. Michel, M. Amine Salhi, Stéphane Grauby, Wilfrid Claeys, Stefan Dilhaire:
  Time gating imaging through thick silicon substrate: a new step towards backside characterisation. 1520-1524
• 
  Andreas Altes, Rainer Tilgner, W. Walter:
  Numerical evaluation of miniaturized resistive probe for quantitative thermal near-field microscopy of thermal conductivity. 1525-1529
• 
  S. Courtas, M. Grégoire, X. Federspiel, N. Bicaïs-Lépinay, C. Wyon:
  Electron BackScattered Diffraction (EBSD) use and applications in newest technologies development. 1530-1535
• 
  Marco Buzzo, Mauro Ciappa, Wolfgang Fichtner:
  Characterization of photonic devices by secondary electron potential contrast. 1536-1541
• 
  Yasunori Goto, Tomokatsu Higuchi:
  A 3D analysis technique for detecting trace metal contamination. 1542-1547
• 
  R. A. Nicholson, H. Suri:
  Physical-to-Logical Mapping of Emission Data using Place-and-Route. 1548-1553
• 
  Nicolas Rodriguez, Jérôme Adrian, Catherine Grosjean, Gérald Haller, Christophe Girardeaux, Alain Portavoce:
  Evaluation of scanning capacitance microscopy sample preparation by focused ion beam. 1554-1557
• 
  Zhongling Qian, Frank Siegelin, Birgit Tippelt, Stefan Müller:
  Localization and physical analysis of a complex SRAM failure in 90nm technology. 1558-1562
• 
  Fabien Essely, Frédéric Darracq, Vincent Pouget, Mustapha Remmach, Felix Beaudoin, Nicolas Guitard, Marise Bafleur, Philippe Perdu, André Touboul, Dean Lewis:
  Application of various optical techniques for ESD defect localization. 1563-1568
• 
  Christophe De Nardi, Romain Desplats, Philippe Perdu, Jean-Luc Gauffier, Christophe Guérin:
  Descrambling and data reading techniques for flash-EEPROM memories. Application to smart cards. 1569-1574
• 
  Masaru Sanada, Yutaka Yoshizawa:
  Fault diagnosis technology based on transistor behavior analysis for physical analysis. 1575-1580

Topic D: Failure Mechanisms in New Materials and Transistors

• 
  A. S. Oates, Shou-Chung Lee:
  Electromigration failure distributions of dual damascene Cu /low - k interconnects. 1581-1586
• 
  Heinrich Wolf, Horst A. Gieser, Detlef Bonfert, Markus Hauser:
  ESD Susceptibility of Submicron Air Gaps. 1587-1590
• 
  Michael Heer, Viktor Dubec, Sergey Bychikhin, Dionyz Pogany, Erich Gornik, M. Frank, A. Konrad, J. Schulz:
  Analysis of triggering behaviour of high voltage CMOS LDMOS clamps and SCRs during ESD induced latch-up. 1591-1596
• 
  David Alvarez, Michel J. Abou-Khalil, Christian Russ, Kiran V. Chatty, Robert Gauthier, D. Kontos, Junjun Li, Christopher Seguin, Ralph Halbach:
  Analysis of ESD failure mechanism in 65nm bulk CMOS ESD NMOSFETs with ESD implant. 1597-1602
• 
  T. Pompl, A. Kerber, M. Röhner, Martin Kerber:
  Gate voltage and oxide thickness dependence of progressive wear-out of ultra-thin gate oxides. 1603-1607
• 
  Raul Fernández, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, Ben Kaczer, Guido Groeseneken:
  FinFET and MOSFET preliminary comparison of gate oxide reliability. 1608-1611
• 
  Tze Wee Chen, Choshu Ito, William Loh, Robert W. Dutton:
  Post-breakdown leakage resistance and its dependence on device area. 1612-1616
• 
  Cora Salm, André J. Hof, Fred G. Kuper, Jurriaan Schmitz:
  Reduced temperature dependence of hot carrier degradation in deuterated nMOSFETs. 1617-1622
• 
  Gerald Lucovsky, H. Seo, L. B. Fleming, M. D. Ulrich, J. Lüning, Patrick Lysaght, Gennadi Bersuker:
  Intrinsic bonding defects in transition metal elemental oxides. 1623-1628
• 
  Detlef Bonfert, Horst A. Gieser, Heinrich Wolf, M. Frank, A. Konrad, J. Schulz:
  Transient-induced latch-up test setup for wafer-level and package-level. 1629-1633
• 
  J. T. Jang, Y. C. Kim, W. H. Bong, E. K. Kwon, B. J. Kwon, J. S. Jeon, H. G. Kim, I. H. Son:
  A new high-voltage tolerant I/O for improving ESD robustness. 1634-1637
• 
  Cher Ming Tan, Wei Li, Kok Tong Tan, Frankie Low:
  Development of highly accelerated electromigration test. 1638-1642
• 
  J. R. Lloyd, C. E. Murray, S. Ponoth, S. Cohen, E. Liniger:
  The effect of Cu diffusion on the TDDB behavior in a low-k interlevel dielectrics. 1643-1647
• 
  Michael Goroll, Werner Kanert, Reinhard Pufall:
  ESD protection structure qualification - a new approach for release for automotive applications. 1648-1651
• 
  Arijit Roy, Cher Ming Tan:
  Experimental investigation on the impact of stress free temperature on the electromigration performance of copper dual damascene submicron interconnect. 1652-1656
• 
  Joan Marc Rafí, Eddy Simoen, Kiyoteru Hayama, Abdelkarim Mercha, Francesca Campabadal, Hidenori Ohyama, Cor Claeys:
  Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs. 1657-1663
• 
  Kyoung-Sik Im, Jae-Hyok Ko, Suk-Jin Kim, Chan-Hee Jeon, Chang-Su Kim, Ki-Tae Lee, Han-Gu Kim, Il-Hun Son:
  Novel ESD strategy for high voltage non-volatile programming pin application. 1664-1668
• 
  Simone Gerardin, Alessio Griffoni, Andrea Cester, Alessandro Paccagnella, G. Ghidini:
  Degradation of static and dynamic behavior of CMOS inverters during constant and pulsed voltage stress. 1669-1672
• 
  Robin C. J. Wang, Chang-Chun Lee, L. D. Chen, Kenneth Wu, K. S. Chang-Liao:
  A study of Cu/Low-k stress-induced voiding at via bottom and its microstructure effect. 1673-1678
• 
  Cadmus A. Yuan, Willem D. van Driel, Richard B. R. van Silfhout, Olaf van der Sluis, Roy A. B. Engelen, Leo J. Ernst, Fred van Keulen, G. Q. Zhang:
  Delamination analysis of Cu/low-k technology subjected to chemical-mechanical polishing process conditions. 1679-1684

Topic E: Reliability of MEMS

• 
  Bernhard Wunderle, Bernd Michel:
  Progress in reliability research in the micro and nano region. 1685-1694
• 
  M. A. Exarchos, E. Papandreou, Patrick Pons, Mohamed Lamhamdi, George J. Papaioannou, Robert Plana:
  Charging of radiation induced defects in RF MEMS dielectric films. 1695-1699
• 
  Mohamed Lamhamdi, Jean Guastavino, Laurent Boudou, Y. Segui, Patrick Pons, Laurent Bouscayrol, Robert Plana:
  Charging-Effects in RF capacitive switches influence of insulating layers composition. 1700-1704
• 
  Cristiano Palego, Arnaud Pothier, Aurelian Crunteanu, Pierre Blondy:
  High power reliability aspects on RF MEMS varactor design. 1705-1710
• 
  Peter Jacob, Albert Kunz, Giovanni Nicoletti:
  Reliability and wearout characterisation of LEDs. 1711-1714
• 
  Mathieu Boutillier, Olivier Gauthier-Lafaye, S. Bonnefont, F. Lozes-Dupuy, F.-J. Vermersch, M. Krakowski, Olivier Gilard:
  Strong electron irradiation hardness of 852 nm Al-free laser diodes. 1715-1719
• 
  Matteo Meneghini, Simona Podda, A. Morelli, Ruggero Pintus, L. Trevisanello, Gaudenzio Meneghesso, Massimo Vanzi, Enrico Zanoni:
  High brightness GaN LEDs degradation during dc and pulsed stress. 1720-1724
• 
  A. Sozza, Arnaud Curutchet, Christian Dua, Nathalie Malbert, Nathalie Labat, André Touboul:
  AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements. 1725-1730
• 
  Kiyoteru Hayama, Kenichiro Takakura, K. Shigaki, Hidenori Ohyama, Joan Marc Rafí, Abdelkarim Mercha, Eddy Simoen, Cor Claeys:
  Impact on the back gate degradation in partially depleted SOI n-MOSFETs by 2-MeV electron irradiation. 1731-1735
• 
  Werner Bergbauer, Thomas Lutz, Werner Frammelsberger, Guenther Benstetter:
  Kelvin probe force microscopy - An appropriate tool for the electrical characterisation of LED heterostructures. 1736-1740
• 
  Aurelian Crunteanu, Arnaud Pothier, Pierre Blondy, Frederic Dumas-Bouchiat, C. Champeaux, A. Catherinot, P. Tristant, Olivier Vendier, Claude Drevon, Jean Louis Cazaux:
  Gamma radiation effects on RF MEMS capacitive switches. 1741-1746
• 
  A. V. Krivosheeva, V. L. Shaposhnikov, V. V. Lyskouski, V. E. Borisenko, F. Arnaud d'Avitaya, J.-L. Lazzari:
  Prospects on Mn-doped ZnGeP₂ for spintronics. 1747-1749
• 
  Francesca Danesin, Franco Zanon, Simone Gerardin, Fabiana Rampazzo, Gaudenzio Meneghesso, Enrico Zanoni, Alessandro Paccagnella:
  Degradation induced by 2-MeV alpha particles on AlGaN/GaN high electron mobility transistors. 1750-1753

Topic F: Reliability of High Power Semiconductors

• 
  Alberto Castellazzi, Mauro Ciappa, Wolfgang Fichtner, G. Lourdel, Michel Mermet-Guyennet:
  Compact modelling and analysis of power-sharing unbalances in IGBT-modules used in traction applications. 1754-1759
• 
  Paolo Cova, Nicola Delmonte, Roberto Menozzi:
  Thermal characterization and modeling of power hybrid converters for distributed power systems. 1760-1765
• 
  Laurent Dupont, Zoubir Khatir, Stéphane Lefebvre, S. Bontemps:
  Effects of metallization thickness of ceramic substrates on the reliability of power assemblies under high temperature cycling. 1766-1771
• 
  Davide Barlini, Mauro Ciappa, Alberto Castellazzi, Michel Mermet-Guyennet, Wolfgang Fichtner:
  New technique for the measurement of the static and of the transient junction temperature in IGBT devices under operating conditions. 1772-1777
• 
  Adel Benmansour, Stephane Azzopardi, Jean-Christophe Martin, Eric Woirgard:
  Failure mechanism of trench IGBT under short-circuit after turn-off. 1778-1783
• 
  Andrea Irace, Giovanni Breglio, Paolo Spirito, A. Bricconi, Diego Raffo, Luigi Merlin:
  Effect of a buffer layer in the epi-substrate region to boost the avalanche capability of a 100V Schottky diode. 1784-1789
• 
  Francesco Iannuzzo, Giovanni Busatto, Carmine Abbate:
  Investigation of MOSFET failure in soft-switching conditions. 1790-1794
• 
  G. Cassanelli, Giovanna Mura, Fausto Fantini, Massimo Vanzi, Bernard Plano:
  Failure Analysis-assisted FMEA. 1795-1799
• 
  Mohamed Ali Belaïd, K. Ketata, Mohamed Masmoudi, M. Gares, Hichame Maanane, Jérôme Marcon:
  Electrical parameters degradation of power RF LDMOS device after accelerated ageing tests. 1800-1805
• 
  M. Gares, Hichame Maanane, Mohamed Masmoudi, Pierre Bertram, Jérôme Marcon, Mohamed Ali Belaïd, Karine Mourgues, C. Tolant, Philippe Eudeline:
  Hot carrier reliability of RF N- LDMOS for S Band radar application. 1806-1811
• 
  Chuanzhao Yu, J. S. Yuan, Enjun Xiao:
  Dynamic voltage stress effects on nMOS varactor. 1812-1816
• 
  C. Moreau, P. Le Helleye, D. Ruelloux:
  A complete RF power technology assessment for military applications. 1817-1822
• 
  Guangyu Huang, Cher Ming Tan:
  Device level electrical-thermal-stress coupled-field modeling. 1823-1827
• 
  Danijel Dankovic, Ivica Manic, Snezana Djoric-Veljkovic, Vojkan Davidovic, Snezana Golubovic, Ninoslav Stojadinovic:
  NBT stress-induced degradation and lifetime estimation in p-channel power VDMOSFETs. 1828-1833
• 
  X. Perpiñà, Jean-François Serviere, J. Saiz, Davide Barlini, Michel Mermet-Guyennet, José Millán:
  Temperature measurement on series resistance and devices in power packs based on on-state voltage drop monitoring at high current. 1834-1839
• 
  Chuanzhao Yu, L. Jiang, Jiann-Shiun Yuan:
  Study of performance degradations in DC-DC converter due to hot carrier stress by simulation. 1840-1843
• 
  P. Zimprich, T. Licht, B. Weiss:
  A new method to characterize the thermomechanical response of multilayered structures in power electronics. 1844-1847
• 
  Carmine Abbate, Giovanni Busatto, Luigi Fratelli, Francesco Iannuzzo:
  The high frequency behaviour of high voltage and current IGBT modules. 1848-1853
• 
  Giovanni Busatto, Francesco Iannuzzo, Alberto Porzio, Annunziata Sanseverino, Francesco Velardi, Giuseppe Currò:
  Experimental study of power MOSFET's gate damage in radiation environment. 1854-1857
• 
  Jingchao Wang, Edgar Olthof, Wim Metselaar:
  Hot-carrier degradation analysis based on ring oscillators. 1858-1863
• 
  In Kyung Lee, Se Re Na Yun, Kyosun Kim, Chong-Gun Yu, Jong Tae Park:
  New experimental findings on hot-carrier-induced degradation in lateral DMOS transistors. 1864-1867

Topic G: Packaging and Assembly Reliability

• 
  R. Plieninger, M. Dittes, Klaus Pressel:
  Modern IC packaging trends and their reliability implications. 1868-1873
• 
  Ming-Chih Yew, C. Y. Chou, C. S. Huang, W. K. Yang, Kuo-Ning Chiang:
  The solder on rubber (SOR) interconnection design and its reliability assessment based on shear strength test and finite element analysis. 1874-1879
• 
  W. D. van Driel, Olaf van der Sluis, Dao-Guo Yang, R. L. J. M. Ubachs, C. Zenz, G. Aflenzer, G. Q. Zhang:
  Reliability modelling for packages in flexible end-products. 1880-1885
• 
  W. C. Maia Filho, M. Brizoux, Hélène Frémont, Yves Danto:
  Improved physical understanding of intermittent failure in continuous monitoring method. 1886-1891
• 
  H. C. Yeo, Ningqun Guo, Hejun Du, Weimin Huang, X. M. Jian:
  Characterisation of IC packaging interfaces and loading effects. 1892-1897
• 
  Toru Miyazaki, Tomoya Omata:
  Electromigration degradation mechanism for Pb-free flip-chip micro solder bumps. 1898-1903
• 
  Se Young Yang, Wang-Joo Lee, S. H. Jeong, S. J. Lee:
  Structural reliability assessment of multi-stack package (MSP) under high temperature storage (HTS) testing condition. 1904-1909
• 
  F. Patrick McCluskey, M. Dash, Z. Wang, D. Huff:
  Reliability of high temperature solder alternatives. 1910-1914
• 
  Shuang Yang, Ji Wu, Aristos Christou:
  Initial stage of silver electrochemical migration degradation. 1915-1921
• 
  Jean Augereau, Yves Ousten, Bruno Levrier, Laurent Béchou:
  Use of signal processing imaging for the study of a 3D package in harsh environment. 1922-1925
• 
  V. Krieger, Wolfgang Wondrak, A. Dehbi, W. Bartel, Yves Ousten, Bruno Levrier:
  Defect detection in multilayer ceramic capacitors. 1926-1931
• 
  Yasushi Yamada, Yoshikazu Takaku, Yuji Yagi, Y. Nishibe, Ikuo Ohnuma, Yuji Sutou, R. Kainuma, Kiyohito Ishida:
  Pb-free high temperature solders for power device packaging. 1932-1937

Volume 46, Number 12, December 2006

Introductory Invited Papers

• 
  Juan C. Ranuárez, M. Jamal Deen, Chih-Hung Chen:
  A review of gate tunneling current in MOS devices. 1939-1956
• 
  Joseph B. Bernstein, Moshe Gurfinkel, Xiaojun Li, Jörg Walters, Yoram Shapira, Michael Talmor:
  Electronic circuit reliability modeling. 1957-1979
• 
  Axel Sikora, Frank-Peter Pesl, Walter Unger, Uwe Paschen:
  Technologies and reliability of modern embedded flash cells. 1980-2005
• 
  Reza Ghaffarian:
  CCGA packages for space applications. 2006-2024

Research Papers

• 
  Hou-Kuei Huang, Chou-Sern Wang, Mau-Phon Houng, Yeong-Her Wang:
  Hot-electron effects on AlGaAs/InGaAs/GaAs PHEMTs under accelerated DC stresses. 2025-2031
• 
  Dimitrios H. Tassis, Argyrios T. Hatzopoulos, N. Arpatzanis, C. A. Dimitriadis, G. Kamarinos:
  Dynamic hot-carrier induced degradation in n-channel polysilicon thin-film transistors. 2032-2037
• 
  Hou-Kuei Huang, Cieh-Pin Chang, Mau-Phon Houng, Yeong-Her Wang:
  Current-dependent hot-electron stresses on InGaP-gated and AlGaAs-gated low noise PHEMTs. 2038-2043
• 
  Bing-Liang Yang, Paul C. K. Kwok, P. T. Lai:
  Influence of TCE concentration in thermal oxidation on reliability of SiC MOS capacitors under Fowler-Nordheim electron injection. 2044-2048
• 
  Baozhen Li, Emmanuel Yashchin, Cathryn Christiansen, Jason Gill, Ronald Filippi, Timothy D. Sullivan:
  Application of three-parameter lognormal distribution in EM data analysis. 2049-2055
• 
  C. K. Wong, Hei Wong, Mansun Chan, Chi-Wah Kok, H. P. Chan:
  Minimizing hydrogen content in silicon oxynitride by thermal oxidation of silicon-rich silicon nitride. 2056-2061
• 
  Z. W. He, X. Q. Liu, D. Y. Xu, Y. Y. Wang:
  Effect of annealing on the properties of low-k nanoporous SiO₂ films prepared by sol-gel method with catalyst HF. 2062-2066
• 
  Chih-Kang Deng, Ming-Dou Ker:
  ESD robustness of thin-film devices with different layout structures in LTPS technology. 2067-2073
• 
  Yang-Hua Chang, Hui-Fen Hsu:
  Determination of thermal resistance using Gummel measurement for InGaP/GaAs HBTs. 2074-2078
• 
  Anna Kozlowska, Andrzej Malag:
  Investigations of transient thermal properties of conductively cooled diode laser arrays operating under quasicontinuous-wave conditions. 2079-2084
• 
  Hirotaka Komoda, Masaaki Yoshida, Yoh Yamamoto, Kouji Iwasaki, Ikuko Nakatani, Heiji Watanabe, Kiyoshi Yasutake:
  Novel charge neutralization techniques applicable to wide current range of FIB processing in FIB-SEM combined system. 2085-2095
• 
  E. Misra, N. D. Theodore, J. W. Mayer, T. L. Alford:
  Failure mechanisms of pure silver, pure aluminum and silver-aluminum alloy under high current stress. 2096-2103
• 
  Kuo-Ming Chen, J. D. Wu, Kuo-Ning Chiang:
  Effects of pre-bump probing and bumping processes on eutectic solder bump electromigration. 2104-2111
• 
  C. D. Breach, F. Wulff:
  Oxidation of Au₄Al in un-moulded gold ballbonds after high temperature storage (HTS) in air at 175degreeC. 2112-2121
• 
  Stephen Ridout, Milos Dusek, Chris Bailey, Chris Hunt:
  Assessing the performance of crack detection tests for solder joints. 2122-2130
• 
  Tong Yan Tee, Hun Shen Ng, Zhaowei Zhong:
  Board level solder joint reliability analysis of stacked die mixed flip-chip and wirebond BGA. 2131-2138
• 
  Ming-Hung Shu, Ching-Hsue Cheng, Jing-Rong Chang:
  Using intuitionistic fuzzy sets for fault-tree analysis on printed circuit board assembly. 2139-2148
• 
  Reza Sedaghat, Mayuri Kunchwar, Raha Abedi, M. Reza Javaheri:
  Transistor-level to gate-level comprehensive fault synthesis for n-input primitive gates. 2149-2158

Errata

• 
  Charles S. Whitman:
  Erratum to "Reliability results of HBTs with an InGaP emitter" [Microelectron. Reliability 46 (2006) 1261-1271]. 2159
• 
  Charles S. Whitman, Terri M. Gilbert, Ann M. Rahn, Jennifer A. Antonell:
  Erratum to "Determining factors affecting ESD failure voltage using DOE" [Microelectron. Reliability 46 (2006) 1228-1237]. 2160