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ORCIDBarry J. O'Sullivan
Person information
- affiliation: KU Leuven, Belgium
- not to be confused with: Barry O'Sullivan
Other persons with a similar name
- Barry O'Sullivan
![[0000-0002-0090-2085]](https://dblp.dagstuhl.de/img/orcid-mark.12x12.png "0000-0002-0090-2085")
— University College Cork, Ireland - Barry Sullivan
- Barry J. Sullivan
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2020 – today
- 2024
[c17]Barry J. O'Sullivan, AliReza Alian, Arturo Sibaja Hernandez, Jacopo Franco, Sachin Yadav, Hao Yu, A. Rathi, Uthayasankaran Peralagu, Adrian Vaisman Chasin, Bertrand Parvais, Nadine Collaert:
DC Reliability Study of $\text{high}-\kappa$ GaN-on-Si MOS-HEMT's for mm-Wave Power Amplifiers. IRPS 2024: 1-9- [c16]Ping-Yi Hsieh, Ameni Ben Driss, Artemisia Tsiara, Barry J. O'Sullivan, Didit Yudistira, Bernardette Kunert, Joris Van Campenhout, Ingrid De Wolf:
Modeling Dark Current Degradation of Monolithic InGaAs/GaAs-On-Si Nano-Ridge Photodetectors. IRPS 2024: 2 - [c15]J. P. Bastos, Barry J. O'Sullivan, Yusuke Higashi, Adrian Vaisman Chasin, Jacopo Franco, Hiroaki Arimura, J. Ganguly, Elena Capogreco, Alessio Spessot, N. Horiguchi:
Side and Corner Region Non-Uniformities in Grown SiO2 and Their Implications on Current, Capacitance and Breakdown Characteristics. IRPS 2024: 36 - 2022
- [c14]J. P. Bastos, Barry J. O'Sullivan, Jacopo Franco, Stanislav Tyaginov, Brecht Truijen, Adrian Vaisman Chasin, Robin Degraeve, Ben Kaczer, Romain Ritzenthaler, Elena Capogreco, E. Dentoni Litta, Alessio Spessot, Yusuke Higashi, Y. Yoon, V. Machkaoutsan, Pierre Fazan, N. Horiguchi:
Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery. IRPS 2022: 1-6 - [c13]Barry J. O'Sullivan, Brecht Truijen, Vamsi Putcha, Alexander Grill, Adrian Vaisman Chasin, Geert Van den Bosch, Ben Kaczer, Md Nur K. Alam, Jan Van Houdt:
Modelling ultra-fast threshold voltage instabilities in Hf-based ferroelectrics. IRPS 2022: 4 - [c12]Ping-Yi Hsieh, Artemisia Tsiara, Barry J. O'Sullivan, Didit Yudistira, Marina Baryshnikova, Guido Groeseneken, Bernardette Kunert, Marianna Pantouvaki, Joris Van Campenhout, Ingrid De Wolf:
Wafer-Level Aging of InGaAs/GaAs Nano-Ridge p-i-n Diodes Monolithically Integrated on Silicon. IRPS 2022: 9 - [c11]Brecht Truijen, Barry J. O'Sullivan, Md. Nurul Alam, Dieter Claes, Mischa Thesberg, Philippe Roussel, Adrian Vaisman Chasin, Geert Van den Bosch, Ben Kaczer, Jan Van Houdt:
Trap-polarization interaction during low-field trap characterization on hafnia-based ferroelectric gatestacks. IRPS 2022: 12-1 - 2021
- [c10]Sidharth Rao, Woojin Kim, Simon Van Beek, Shreya Kundu, Manu Perumkunnil, Stefan Cosemans, Farrukh Yasin, Sebastien Couet, Robert Carpenter, Barry J. O'Sullivan, Shamin H. Sharifi, N. Jossart, Laurent Souriau, Ludovic Goux, Dimitri Crotti, Gouri Sankar Kar:
STT-MRAM array performance improvement through optimization of Ion Beam Etch and MTJ for Last-Level Cache application. IMW 2021: 1-4 - [c9]Simon Van Beek, Siddharth Rao, Shreya Kundu, Woojin Kim, Barry J. O'Sullivan, Stefan Cosemans, Farrukh Yasin, Robert Carpenter, Sebastien Couet, Shamin H. Sharifi, Nico Jossart, Davide Crotti, Gouri Sankar Kar:
Edge-induced reliability & performance degradation in STT-MRAM: an etch engineering solution. IRPS 2021: 1-5 - [c8]Tibor Grasser, Barry J. O'Sullivan, Ben Kaczer, Jacopo Franco, Bernhard Stampfer, Michael Waltl:
CV Stretch-Out Correction after Bias Temperature Stress: Work-Function Dependence of Donor-/Acceptor-Like Traps, Fixed Charges, and Fast States. IRPS 2021: 1-6 - 2020
- [c7]Simon Van Beek, Barry J. O'Sullivan, Sebastien Couet, Davide Crotti, Dimitri Linten, Gouri Sankar Kar:
Understanding and empirical fitting the breakdown of MgO in end-of-line annealed MTJs. IRPS 2020: 1-5 - [c6]Tibor Grasser, Ben Kaczer, Barry J. O'Sullivan, Gerhard Rzepa, Bernhard Stampfer, Michael Waltl:
The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release. IRPS 2020: 1-6
2010 – 2019
- 2019
- [c5]Alicja Lesniewska, S. A. Srinivasan, Joris Van Campenhout, Barry J. O'Sullivan, Kris Croes:
Accelerated Device Degradation of High-Speed Ge Waveguide Photodetectors. IRPS 2019: 1-7 - [c4]Barry J. O'Sullivan, Romain Ritzenthaler, Gerhard Rzepa, Z. Wu, E. Dentoni Litta, O. Richard, T. Conard, V. Machkaoutsan, Pierre Fazan, C. Kim, Jacopo Franco, Ben Kaczer, Tibor Grasser, Alessio Spessot, Dimitri Linten, N. Horiguchi:
Gate-Stack Engineered NBTI Improvements in Highvoltage Logic-For-Memory High-ĸ/Metal Gate Devices. IRPS 2019: 1-8 - 2018
- [j3]Gerhard Rzepa, Jacopo Franco, Barry J. O'Sullivan, A. Subirats, Marko Simicic, Geert Hellings, Pieter Weckx, Markus Jech, Theresia Knobloch, Michael Waltl, Philippe Roussel, Dimitri Linten, Ben Kaczer, Tibor Grasser:
Comphy - A compact-physics framework for unified modeling of BTI. Microelectron. Reliab. 85: 49-65 (2018) - [c3]Simon Van Beek, Philippe Roussel, Barry J. O'Sullivan, Robin Degraeve, Stefan Cosemans, Dimitri Linten, Gouri Sankar Kar:
Study of breakdown in STT-MRAM using ramped voltage stress and all-in-one maximum likelihood fit. ESSDERC 2018: 146-149 - [c2]Tibor Grasser, Bernhard Stampfer, Michael Waltl, Gerhard Rzepa, Karl Rupp, Franz Schanovsky, Gregor Pobegen, Katja Puschkarsky, Hans Reisinger, Barry J. O'Sullivan, Ben Kaczer:
Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors. IRPS 2018: 2 - [c1]Barry J. O'Sullivan, Simon Van Beek, Philippe J. Roussel, Sidharth Rao, Wonsub Kim, S. Couet, Johan Swerts, Farrukh Yasin, Dimitri Crotti, Dimitri Linten, Gouri Sankar Kar:
Extended RVS characterisation of STT-MRAM devices: Enabling detection of AP/P switching and breakdown. IRPS 2018: 5-1
2000 – 2009
- 2005
- [j2]J. M. Decams, H. Guillon, Carmen Jiménez, M. Audier, J. P. Sénateur, C. Dubourdieu, O. Cadix, Barry J. O'Sullivan, Mircea Modreanu, Paul K. Hurley:
Electrical characterization of HfO2 films obtained by UV assisted injection MOCVD. Microelectron. Reliab. 45(5-6): 929-932 (2005) - 2001
- [j1]Barry J. O'Sullivan, Paul K. Hurley, F. N. Cubaynes, P. A. Stolk, F. P. Widdershoven:
Flat band voltage shift and oxide properties after rapid thermal annealing. Microelectron. Reliab. 41(7): 1053-1056 (2001)
Coauthor Index
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