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2020 – today
- 2020
[c26]Maximilian Reuter
, Johannes Pfau, Tillmann A. Krauss, Mahdi Moradinasab, Udo Schwalke, Jürgen Becker, Klaus Hofmann:
Towards Ambipolar Planar Devices: The DeFET Device in Area Constrained XOR Applications. LASCAS 2020: 1-4
2010 – 2019
- 2019
- [c25]Maximilian Reuter, Tillmann A. Krauss, Mahdi Moradinasab, Johannes Pfau, Udo Schwalke, Jürgen Becker, Klaus Hofmann:
From MOSFETs to Ambipolar Transistors: A Static DeFET Inverter Cell for SOI. APCCAS 2019: 113-116 - [c24]Dennis Noll, Udo Schwalke:
Reliability issues and length dependence of nanocrystalline graphene field-effect transistors for gas sensing. DTIS 2019: 1-5 - [c23]Fatemeh Safari, Mahdi Moradinasab, M. Fathipour, Udo Schwalke:
The transport and optical sensing properties of Blue Phosphorene: A First-Principles Study. DTIS 2019: 1-4 - 2018
- [c22]Tillmann Krauss, Frank Wessely, Udo Schwalke:
Reconfigurable electrostatically doped 2.5-gate planar field-effect transistors for dopant-free CMOS. DTIS 2018: 1-4 - [c21]Dennis Noll, Udo Schwalke:
Ammonia sensors based on in situ fabricated nanocrystalline graphene field-effect devices. DTIS 2018: 1-5 - [c20]Mike Schwarz, Laurie E. Calvet, John P. Snyder, Tillmann Krauss, Udo Schwalke, Alexander Kloes:
Process and Device Simulation of Schottky Barrier MOSFETs for Analysis of Current Injection. MIXDES 2018: 67-72 - 2017
- [c19]Tillmann Krauss, Frank Wessely, Udo Schwalke:
Fabrication and simulation of electrically reconfigurable dual metal-gate planar field-effect transistors for dopant-free CMOS. DTIS 2017: 1-6 - [c18]Dennis Noll, Udo Schwalke:
Feasibility study of in-situ grown nanocrystalline graphene for humidity sensing. DTIS 2017: 1-4 - [c17]Mike Schwarz, John P. Snyder, Tillmann Krauss, Udo Schwalke, Laurie E. Calvet, Alexander Kloes:
Simulation framework for barrier lowering in Schottky barrier MOSFETs. MIXDES 2017: 149-153 - 2016
- [c16]Dennis Noll, Udo Schwalke:
PMMA-enhancement of the lateral growth of transfer-free in situ CCVD grown graphene. SSD 2016: 548-551 - [c15]Tillmann Krauss, Frank Wessely, Udo Schwalke:
Electrically reconfigurable dual metal-gate planar field-effect transistor for dopant-free CMOS. SSD 2016: 681-686 - [c14]Dennis Noll, Udo Schwalke:
Investigation of transfer-free catalytic CVD graphene on SiO2 by means of conductive atomic force microscopy. DTIS 2016: 1-4 - 2015
- [c13]Dennis Noll, Udo Schwalke:
Silicon CMOS compatible in situ CCVD growth of graphene on silicon nitride. DTIS 2015: 1-3 - 2014
- [c12]Martin Keyn, Andreas Kramer, Udo Schwalke:
Dependence of annealing temperature on cluster formation during in situ growth of CNTs. DTIS 2014: 1-5 - [c11]Tillmann Krauss, Frank Wessely, Udo Schwalke:
An electrostatically doped planar device concept. DTIS 2014: 1-4 - [c10]Pia Juliane Wessely, Udo Schwalke:
2nd generation bilayer graphene transistors for applications in nanoelectronics. DTIS 2014: 1-3 - 2013
- [j5]Frank Wessely, Tillmann Krauss, Udo Schwalke:
Reconfigurable CMOS with undoped silicon nanowire midgap Schottky-barrier FETs. Microelectron. J. 44(12): 1072-1076 (2013) - [c9]Udo Schwalke:
The future of nanoelectronics is black: From silicon to hexagonal carbon. AFRICON 2013: 1-5 - [c8]Martin Keyn, Udo Schwalke:
Multi-CNTFETs for power device applications: Investigation of CCVD grown CNTs by means of atomic force microscopy. DTIS 2013: 1-5 - [c7]Pia Juliane Wessely, Udo Schwalke:
Transfer-free grown bilayer graphene memory devices. DTIS 2013: 12-15 - [c6]Udo Schwalke, Frank Wessely, Tillmann Krauss:
Simulation and experimental verification: Dopant-free Si-nanowire CMOS technology on silicon-on-insulator material. IDT 2013: 1-6 - 2012
- [c5]Martin Keyn, Pia Juliane Wessely, Frank Wessely, Lorraine Rispal, Johannes Palm, Udo Schwalke:
Feasibility study on in situ CCVD grown CNTs for field-effect power device applications. DTIS 2012: 1-3 - [c4]Udo Schwalke, Pia Juliane Wessely, Frank Wessely, Martin Keyn, Lorraine Rispal:
Nanoelectronics: From silicon to graphene. DTIS 2012: 1-3 - [c3]Frank Wessely, Tillmann Krauss, Udo Schwalke:
Dopant-free CMOS: A new device concept. DTIS 2012: 1-3 - [c2]Pia Juliane Wessely, Frank Wessely, Emrah Birinci, Udo Schwalke, Bernadette Riedinger:
On/off-current ratios of transfer-free bilayer graphene FETs as a function of temperature. DTIS 2012: 1-3
2000 – 2009
- 2008
- [c1]Udo Schwalke:
Novel Field-Effect Controlled Single-Walled Carbon Nanotube Network Devices for Biomedical Sensor Applications. BIODEVICES (2) 2008: 99-102 - 2007
- [j4]Ralf Endres, Yordan Stefanov, Udo Schwalke:
Electrical characterization of crystalline Gd2O3 gate dielectric MOSFETs fabricated by damascene metal gate technology. Microelectron. Reliab. 47(4-5): 528-531 (2007) - 2005
- [j3]Udo Schwalke, Yordan Stefanov:
Process integration and nanometer-scale electrical characterization of crystalline high-k gate dielectrics. Microelectron. Reliab. 45(5-6): 790-793 (2005) - 2001
- [j2]Udo Schwalke:
Progress in device isolation technology. Microelectron. Reliab. 41(4): 483-490 (2001) - [j1]Udo Schwalke, Martin Pölzl, Thomas Sekinger, Martin Kerber:
Ultra-thick gate oxides: charge generation and its impact on reliability. Microelectron. Reliab. 41(7): 1007-1010 (2001)
Coauthor Index
aka: Tillmann A. Krauss
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