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Sung-Burn Cho

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2000 – 2009

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2001
[j2]
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Kyehyun Kyung, Hi-Choon Lee, Ki-Whan Song, Ho-Sung Song, Keewook Jung, Joon-Seo Moon, Byoung-Sul Kim, Sung-Burn Cho, Changhyun Kim, Soo-In Cho:
A 2.5-V 2.0-Gbyte/s 288-Mb packet-based DRAM with enhanced cell efficiency and noise immunity. IEEE J. Solid State Circuits 36(5): 735-743 (2001)

1990 – 1999

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1999
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Changhyun Kim, Kye-Hyun Kyung, W.-P. Jeong, J.-S. Kim, Byung-Sik Moon, Joon-Wan Chai, S.-M. Yim, Jung-Hwan Choi, K.-H. Han, C.-J. Park, Hong-Sun Hwang, H. Choi, Sung-Burn Cho, Clemenz L. Portmann, Soo-In Cho:
A 2.5-V, 72-Mbit, 2.0-GByte/s packet-based DRAM with a 1.0-Gbps/pin interface. IEEE J. Solid State Circuits 34(5): 645-652 (1999)

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