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2020 – today
- 2024
[c13]Mattia Gerardi
, Arvind Sharma, Yang Xiang, Jakub Kaczmarek, Fernando García-Redondo, Maarten Rosmeulen, Marie Garcia Bardon:
A DTCO Framework for 3D NAND Flash Readout. DATE 2024: 1-2- [c12]Laurent Breuil, R. Izmailov, Mihaela Ioana Popovici, J. Stiers, Antonio Arreghini, S. Ramesh, Geert Van den Bosch, Jan Van Houdt, Maarten Rosmeulen:
Gate Side Injection Operating Mode for 3D NAND Flash Memories. IMW 2024: 1-4 - [c11]S. Rachidi, S. Ramesh, Davide Tierno, G. L. Donadio, A. Pacco, J. W. Maes, Y. Jeong, Antonio Arreghini, Geert Van den Bosch, Maarten Rosmeulen:
Pure-Metal Replacement Gate for Reliable 30 nm Pitch Scaled 3D NAND Flash. IMW 2024: 1-4 - [c10]Yusuke Higashi, J. P. Bastos, Adrian Vaisman Chasin, Laurent Breuil, Antonio Arreghini, S. Ramesh, S. Rachidi, Y. Jeong, Geert Van den Bosch, Maarten Rosmeulen:
Investigation of the Impact of Ferroelectricity Boosted Gate Stacks for 3D NAND on Short Time Data Retention and Endurance. IRPS 2024: 1-6 - [c9]D. Tiernc, Antonio Arreghini, Alicja Lesniewska, Y. Jeong, Marleen H. van der Veen, J. Stiers, N. Bazzazian, Ivan Ciofi, Geert Van den Bosch, Maarten Rosmeulen:
Exploring the Reliability Limits for the Z-Pitch Scaling of Molybdenum Inter-Word Line Oxides in 3D NAND. IRPS 2024: 1-5 - 2023
- [c8]Laurent Breuil, Mihaela Ioana Popovici, J. Stiers, Antonio Arreghini, S. Ramesh, Geert Van den Bosch, Jan Van Houdt, Maarten Rosmeulen:
Optimization of Retention in Ferroelectricity Boosted Gate Stacks for 3D NAND. IMW 2023: 1-4 - [c7]Zhuo Chen, Nicolo Ronchi, Amey Walke, Kaustuv Banerjee, Mihaela Ioana Popovici, Kostantine Katcko, Geert Van den Bosch, Maarten Rosmeulen, Valeri Afanas'ev, Jan Van Houdt:
Improved MW of IGZO-channel FeFET by Reading Scheme Optimization and Interfacial Engineering. IMW 2023: 1-4 - [c6]S. Rachidi, S. Ramesh, Laurent Breuil, Z. Tao, Devin Verreck, G. L. Donadio, Antonio Arreghini, Geert Van den Bosch, Maarten Rosmeulen:
Enabling 3D NAND Trench Cells for Scaled Flash Memories. IMW 2023: 1-4 - 2022
- [c5]Laurent Breuil, L. Nyns, S. Rachidi, K. Banerjee, Antonio Arreghini, J. P. Bastos, S. Ramesh, Geert Van den Bosch, Maarten Rosmeulen:
High-K incorporated in a SiON tunnel layer for 3D NAND programming voltage reduction. IMW 2022: 1-4 - [c4]S. Rachidi, Antonio Arreghini, Devin Verreck, G. L. Donadio, K. Banerjee, K. Katcko, Yusuke Oniki, Geert Van den Bosch, Maarten Rosmeulen:
At the Extreme of 3D-NAND Scaling: 25 nm Z-Pitch with 10 nm Word Line Cells. IMW 2022: 1-4 - [c3]Maarten Rosmeulen, Cesar J. Lockhart de la Rosa, K. Willems, S. Fransen, B.-Y. Shih, Devin Verreck, V. Kalangi, F. Yasin, Harold Philipsen, Y. T. Set, N. Ronchi, W. Van Roy, O. Y. F. Henry, Antonio Arreghini, Geert Van den Bosch, Arnaud Furnémont:
Liquid Memory and the Future of Data Storage. IMW 2022: 1-4 - 2021
- [c2]Franz Schanovsky, Devin Verreck, Antonio Arreghini, Gerhard Rzepa, Zlatan Stanojevic, Christian Kernstock, Oskar Baumgartner, Maarten Rosmeulen, Markus Karner:
A TCAD Compatible SONOS Trapping Layer Model for Accurate Programming Dynamics. IMW 2021: 1-4 - [c1]Davide Tierno, Kristof Croes, Arjun Ajaykumar, Siva Ramesh, Geert Van den Bosch, Maarten Rosmeulen:
Reliability of Mo as Word Line Metal in 3D NAND. IRPS 2021: 1-6
2010 – 2019
- 2018
- [j4]Lin-Kun Wu, David San Segundo Bello, Philippe Coppejans, Jan Craninckx, Andreas Süss, Maarten Rosmeulen, Piet Wambacq, Jonathan Borremans:
Analysis and Design of a CMOS Ultra-High-Speed Burst Mode Imager with In-Situ Storage Topology Featuring In-Pixel CDS Amplification. Sensors 18(11): 3683 (2018) - 2016
- [j3]Tomislav Resetar, Koen De Munck, Luc Haspeslagh, Maarten Rosmeulen, Andreas Süss, Robert Puers, Chris Van Hoof:
Development of Gated Pinned Avalanche Photodiode Pixels for High-Speed Low-Light Imaging. Sensors 16(8): 1294 (2016)
2000 – 2009
- 2007
- [j2]Giuseppina Puzzilli, Bogdan Govoreanu, Fernanda Irrera, Maarten Rosmeulen, Jan Van Houdt:
Characterization of charge trapping in SiO2/Al2O3 dielectric stacks by pulsed C-V technique. Microelectron. Reliab. 47(4-5): 508-512 (2007) - 2002
- [j1]Jeroen A. Croon, Maarten Rosmeulen, Stefaan Decoutere, Willy Sansen, Herman E. Maes:
An easy-to-use mismatch model for the MOS transistor. IEEE J. Solid State Circuits 37(8): 1056-1064 (2002)
Coauthor Index
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