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ORCIDTomás Diaz
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Other persons with a similar name
- Tomas Diaz-Becerril
- Tomas G. Diaz Jimenez
- David Tomás 0001
![[0000-0003-3287-9366]](https://dblp.dagstuhl.de/img/orcid-mark.12x12.png "0000-0003-3287-9366")
(aka: David Tomás Díaz) — University of Alicante, Department of Software and Computing Systems, Spain
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2020 – today
- 2020
[j4]Francisco Ramírez-González, Godofredo García Salgado, Enrique Rosendo, Tomás Díaz, Fabiola Nieto-Caballero, Antonio Coyopol, Román Romano, Alberto Luna, Karim Monfil, Erick Gastellou:
Porous Silicon Gas Sensors: The Role of the Layer Thickness and the Silicon Conductivity. Sensors 20(17): 4942 (2020)- [c3]Tomás Díaz, Federico Olmedo, Éric Tanter:
A mechanized formalization of GraphQL. CPP 2020: 201-214
2010 – 2019
- 2018
- [c2]Martin Bodin, Tomás Diaz, Éric Tanter:
A trustworthy mechanized formalization of R. DLS 2018: 13-24 - 2015
- [c1]Tomás Díaz, Christine Julien:
Demo abstract MoodChat: Using context-awareness to connect likeminded co-located individuals. PerCom Workshops 2015: 202-204
2000 – 2009
- 2008
- [j3]Godofredo García Salgado, R. Hernández, Javier Martínez, Tomás Díaz, Héctor Juárez, Enrique Rosendo, Reina Galeazzi, A. García, G. Juárez:
Fabrication, characterization, and analysis of photodetectors metal-porous silicon with different geometry and thickness of the porous silicon layer. Microelectron. J. 39(3-4): 489-493 (2008) - [j2]Crisóforo Morales, Héctor Juárez, Tomás Díaz, Yasuhiro Matsumoto, Enrique Rosendo, Godofredo Garcia, M. Rubin, F. Mora, Mauricio Pacio, A. García:
Low temperature SnO2 films deposited by APCVD. Microelectron. J. 39(3-4): 586-588 (2008) - [j1]Héctor Juárez, Tomás Díaz, Mauricio Pacio, C. Pacheco, E. Rosendo, G. García Salgado, M. Rubin, G. Romero, A. García, C. Morales:
Analog switch device using a MOS structure. Microelectron. J. 39(3-4): 651-655 (2008)
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