乐胖代购免代理版

{"id":"https://openalex.org/W2061736433","doi":"https://doi.org/10.1587/transele.e94.c.1120","title":"Analytical Drain Current Modeling of Dual-Material Surrounding-Gate MOSFETs","display_name":"Analytical Drain Current Modeling of Dual-Material Surrounding-Gate MOSFETs","publication_year":2011,"publication_date":"2011-01-01","ids":{"openalex":"https://openalex.org/W2061736433","doi":"https://doi.org/10.1587/transele.e94.c.1120","mag":"2061736433"},"language":"en","primary_location":{"is_oa":false,"landing_page_url":"https://doi.org/10.1587/transele.e94.c.1120","pdf_url":null,"source":{"id":"https://openalex.org/S2489501747","display_name":"IEICE Transactions on Electronics","issn_l":"0916-8524","issn":["0916-8524","1745-1353"],"is_oa":false,"is_in_doaj":false,"is_indexed_in_scopus":true,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false},"type":"article","type_crossref":"journal-article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5060875005","display_name":"Zunchao Li","orcid":"https://orcid.org/0000-0002-1653-7596"},"institutions":[{"id":"https://openalex.org/I87445476","display_name":"Xi'an Jiaotong University","ror":"https://ror.org/017zhmm22","country_code":"CN","type":"funder","lineage":["https://openalex.org/I87445476"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zunchao LI","raw_affiliation_strings":["Department of Microelectronics, Xi'an Jiaotong University"],"affiliations":[{"raw_affiliation_string":"Department of Microelectronics, Xi'an Jiaotong University","institution_ids":["https://openalex.org/I87445476"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101405253","display_name":"Jinpeng Xu","orcid":"https://orcid.org/0000-0003-0590-831X"},"institutions":[{"id":"https://openalex.org/I87445476","display_name":"Xi'an Jiaotong University","ror":"https://ror.org/017zhmm22","country_code":"CN","type":"funder","lineage":["https://openalex.org/I87445476"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jinpeng XU","raw_affiliation_strings":["Department of Microelectronics, Xi'an Jiaotong University"],"affiliations":[{"raw_affiliation_string":"Department of Microelectronics, Xi'an Jiaotong University","institution_ids":["https://openalex.org/I87445476"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100409387","display_name":"Linlin Liu","orcid":"https://orcid.org/0000-0002-1058-4551"},"institutions":[{"id":"https://openalex.org/I87445476","display_name":"Xi'an Jiaotong University","ror":"https://ror.org/017zhmm22","country_code":"CN","type":"funder","lineage":["https://openalex.org/I87445476"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Linlin LIU","raw_affiliation_strings":["Department of Microelectronics, Xi'an Jiaotong University"],"affiliations":[{"raw_affiliation_string":"Department of Microelectronics, Xi'an Jiaotong University","institution_ids":["https://openalex.org/I87445476"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5067631851","display_name":"Feng Liang","orcid":"https://orcid.org/0000-0002-9393-6224"},"institutions":[{"id":"https://openalex.org/I87445476","display_name":"Xi'an Jiaotong University","ror":"https://ror.org/017zhmm22","country_code":"CN","type":"funder","lineage":["https://openalex.org/I87445476"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Feng LIANG","raw_affiliation_strings":["Department of Microelectronics, Xi'an Jiaotong University"],"affiliations":[{"raw_affiliation_string":"Department of Microelectronics, Xi'an Jiaotong University","institution_ids":["https://openalex.org/I87445476"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5034840700","display_name":"Kuizhi Mei","orcid":"https://orcid.org/0000-0002-8119-3726"},"institutions":[{"id":"https://openalex.org/I4210105595","display_name":"Institute of Art","ror":"https://ror.org/017fyx225","country_code":"PL","type":"facility","lineage":["https://openalex.org/I4210105595","https://openalex.org/I99542240"]},{"id":"https://openalex.org/I87445476","display_name":"Xi'an Jiaotong University","ror":"https://ror.org/017zhmm22","country_code":"CN","type":"funder","lineage":["https://openalex.org/I87445476"]}],"countries":["CN","PL"],"is_corresponding":false,"raw_author_name":"Kuizhi MEI","raw_affiliation_strings":["Institute of Artificial Intelligence and Robotics, Xi'an Jiaotong University"],"affiliations":[{"raw_affiliation_string":"Institute of Artificial Intelligence and Robotics, Xi'an Jiaotong University","institution_ids":["https://openalex.org/I4210105595","https://openalex.org/I87445476"]}]}],"institution_assertions":[],"countries_distinct_count":2,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.214,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.448339,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":65,"max":72},"biblio":{"volume":"E94-C","issue":"6","first_page":"1120","last_page":"1126"},"is_retracted":false,"is_paratext":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/impact-ionization","display_name":"Impact ionization","score":0.5032899},{"id":"https://openalex.org/keywords/channel-length-modulation","display_name":"Channel length modulation","score":0.4706273}],"concepts":[{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.7287183},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6448755},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.5560973},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.55032396},{"id":"https://openalex.org/C148043351","wikidata":"https://www.wikidata.org/wiki/Q4456944","display_name":"Current (fluid)","level":2,"score":0.5324004},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5156535},{"id":"https://openalex.org/C32921249","wikidata":"https://www.wikidata.org/wiki/Q2001256","display_name":"Impact ionization","level":4,"score":0.5032899},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.50255513},{"id":"https://openalex.org/C171291426","wikidata":"https://www.wikidata.org/wiki/Q5072499","display_name":"Channel length modulation","level":5,"score":0.4706273},{"id":"https://openalex.org/C60799052","wikidata":"https://www.wikidata.org/wiki/Q46221","display_name":"Electric field","level":2,"score":0.4549886},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.44321373},{"id":"https://openalex.org/C127162648","wikidata":"https://www.wikidata.org/wiki/Q16858953","display_name":"Channel (broadcasting)","level":2,"score":0.4156964},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.28707367},{"id":"https://openalex.org/C198291218","wikidata":"https://www.wikidata.org/wiki/Q190382","display_name":"Ionization","level":3,"score":0.2033518},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.20069379},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.14055958},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.11752871},{"id":"https://openalex.org/C145148216","wikidata":"https://www.wikidata.org/wiki/Q36496","display_name":"Ion","level":2,"score":0.059339225},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"is_oa":false,"landing_page_url":"https://doi.org/10.1587/transele.e94.c.1120","pdf_url":null,"source":{"id":"https://openalex.org/S2489501747","display_name":"IEICE Transactions on Electronics","issn_l":"0916-8524","issn":["0916-8524","1745-1353"],"is_oa":false,"is_in_doaj":false,"is_indexed_in_scopus":true,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.67,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"grants":[],"datasets":[],"versions":[],"referenced_works_count":25,"referenced_works":["https://openalex.org/W1500452363","https://openalex.org/W1568988145","https://openalex.org/W1588654529","https://openalex.org/W1982379406","https://openalex.org/W2010332910","https://openalex.org/W2014144793","https://openalex.org/W2018743372","https://openalex.org/W2030478982","https://openalex.org/W2034130198","https://openalex.org/W2050794487","https://openalex.org/W2070314622","https://openalex.org/W2090070944","https://openalex.org/W2102412728","https://openalex.org/W2106320707","https://openalex.org/W2112013721","https://openalex.org/W2120223262","https://openalex.org/W2125578667","https://openalex.org/W2129934025","https://openalex.org/W2131842069","https://openalex.org/W2134775505","https://openalex.org/W2147132721","https://openalex.org/W2154322241","https://openalex.org/W2155289070","https://openalex.org/W2168007744","https://openalex.org/W2168351119"],"related_works":["https://openalex.org/W4378676346","https://openalex.org/W2967799633","https://openalex.org/W2944019676","https://openalex.org/W2202664746","https://openalex.org/W2170848481","https://openalex.org/W2099711277","https://openalex.org/W2025921353","https://openalex.org/W2017161269","https://openalex.org/W1992124208","https://openalex.org/W1989613816"],"abstract_inverted_index":{"The":[0,45,84],"asymmetrical":[1],"halo":[2],"and":[3,32,53,64,79],"dual-material":[4],"gate":[5],"structure":[6],"is":[7,41,70,88],"used":[8],"in":[9,30],"the":[10,19,23,59,73],"surrounding-gate":[11,27],"metal-oxide-semiconductor":[12],"field":[13,67],"effect":[14],"transistor":[15],"(MOSFET)":[16],"to":[17],"improve":[18],"performance.":[20],"By":[21],"treating":[22],"device":[24,74],"as":[25],"three":[26],"MOSFETs":[28],"connected":[29],"series":[31],"maintaining":[33],"current":[34,39,77],"continuity,":[35],"a":[36],"comprehensive":[37],"drain":[38],"model":[40,46,87],"developed":[42],"for":[43],"it.":[44],"incorporates":[47],"not":[48],"only":[49],"channel":[50],"length":[51],"modulation":[52],"impact":[54],"ionization":[55],"effects,":[56],"but":[57],"also":[58],"influence":[60],"of":[61],"doping":[62],"concentration":[63],"vertical":[65],"electric":[66],"distributions.":[68],"It":[69],"concluded":[71],"that":[72],"exhibits":[75],"increased":[76],"drivability":[78],"improved":[80],"hot":[81],"carrier":[82],"reliability.":[83],"derived":[85],"analytical":[86],"verified":[89],"with":[90],"numerical":[91],"simulation.":[92]},"abstract_inverted_index_v3":null,"cited_by_api_url":"https://api.openalex.org/works?filter=cites:W2061736433","counts_by_year":[],"updated_date":"2025-04-17T17:00:55.939769","created_date":"2016-06-24"}