乐胖代购免代理版

{"id":"https://openalex.org/W2989707304","doi":"https://doi.org/10.1587/elex.16.20190626","title":"A novel snapback-free reverse-conducting (RC) SOI-LIGBT with a built-in thyristor","display_name":"A novel snapback-free reverse-conducting (RC) SOI-LIGBT with a built-in thyristor","publication_year":2019,"publication_date":"2019-01-01","ids":{"openalex":"https://openalex.org/W2989707304","doi":"https://doi.org/10.1587/elex.16.20190626","mag":"2989707304"},"language":"en","primary_location":{"is_oa":true,"landing_page_url":"https://doi.org/10.1587/elex.16.20190626","pdf_url":"https://www.jstage.jst.go.jp/article/elex/16/24/16_16.20190626/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true},"type":"article","type_crossref":"journal-article","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://www.jstage.jst.go.jp/article/elex/16/24/16_16.20190626/_pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5075811089","display_name":"Jingjie Lin","orcid":"https://orcid.org/0000-0002-7508-8727"},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]},{"id":"https://openalex.org/I4210124847","display_name":"National Engineering Research Center of Electromagnetic Radiation Control Materials","ror":"https://ror.org/02k4dcs46","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210124847"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jingjie Lin","raw_affiliation_strings":["State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China"],"affiliations":[{"raw_affiliation_string":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China","institution_ids":["https://openalex.org/I150229711","https://openalex.org/I4210124847"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5040090528","display_name":"Ping Li","orcid":"https://orcid.org/0000-0003-1622-3607"},"institutions":[{"id":"https://openalex.org/I158842170","display_name":"Chongqing University","ror":"https://ror.org/023rhb549","country_code":"CN","type":"education","lineage":["https://openalex.org/I158842170"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Ping Li","raw_affiliation_strings":["Chongqing Engineering Laboratory of High Performance Integrated Circuits, School of Microelectronics and Communication Engineering, Chongqing University"],"affiliations":[{"raw_affiliation_string":"Chongqing Engineering Laboratory of High Performance Integrated Circuits, School of Microelectronics and Communication Engineering, Chongqing University","institution_ids":["https://openalex.org/I158842170"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5044693191","display_name":"Junji Cheng","orcid":"https://orcid.org/0000-0002-6163-6219"},"institutions":[{"id":"https://openalex.org/I4210124847","display_name":"National Engineering Research Center of Electromagnetic Radiation Control Materials","ror":"https://ror.org/02k4dcs46","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210124847"]},{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Junji Cheng","raw_affiliation_strings":["State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China"],"affiliations":[{"raw_affiliation_string":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China","institution_ids":["https://openalex.org/I4210124847","https://openalex.org/I150229711"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101777342","display_name":"Jiayu Wu","orcid":"https://orcid.org/0000-0001-6988-6872"},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]},{"id":"https://openalex.org/I4210124847","display_name":"National Engineering Research Center of Electromagnetic Radiation Control Materials","ror":"https://ror.org/02k4dcs46","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210124847"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jiayu Wu","raw_affiliation_strings":["State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China"],"affiliations":[{"raw_affiliation_string":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China","institution_ids":["https://openalex.org/I150229711","https://openalex.org/I4210124847"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5038129779","display_name":"Bo Yi","orcid":"https://orcid.org/0000-0002-6596-8480"},"institutions":[{"id":"https://openalex.org/I4210124847","display_name":"National Engineering Research Center of Electromagnetic Radiation Control Materials","ror":"https://ror.org/02k4dcs46","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210124847"]},{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Bo Yi","raw_affiliation_strings":["State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China"],"affiliations":[{"raw_affiliation_string":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China","institution_ids":["https://openalex.org/I4210124847","https://openalex.org/I150229711"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5036789749","display_name":"Xingbi Chen","orcid":null},"institutions":[{"id":"https://openalex.org/I4210124847","display_name":"National Engineering Research Center of Electromagnetic Radiation Control Materials","ror":"https://ror.org/02k4dcs46","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210124847"]},{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xingbi Chen","raw_affiliation_strings":["State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China"],"affiliations":[{"raw_affiliation_string":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China","institution_ids":["https://openalex.org/I4210124847","https://openalex.org/I150229711"]}]}],"institution_assertions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.091,"has_fulltext":true,"fulltext_origin":"pdf","cited_by_count":1,"citation_normalized_percentile":{"value":0.362544,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":61,"max":69},"biblio":{"volume":"16","issue":"24","first_page":"20190626","last_page":"20190626"},"is_retracted":false,"is_paratext":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9999,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9999,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12898","display_name":"Induction Heating and Inverter Technology","score":0.9972,"subfield":{"id":"https://openalex.org/subfields/2210","display_name":"Mechanical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11444","display_name":"Electromagnetic Compatibility and Noise Suppression","score":0.9947,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/snapback","display_name":"Snapback","score":0.99656665},{"id":"https://openalex.org/keywords/mos-controlled-thyristor","display_name":"MOS-controlled thyristor","score":0.580254},{"id":"https://openalex.org/keywords/gate-turn-off-thyristor","display_name":"Gate turn-off thyristor","score":0.4421086},{"id":"https://openalex.org/keywords/static-induction-thyristor","display_name":"Static induction thyristor","score":0.42781267}],"concepts":[{"id":"https://openalex.org/C2779888857","wikidata":"https://www.wikidata.org/wiki/Q18378810","display_name":"Snapback","level":4,"score":0.99656665},{"id":"https://openalex.org/C121922863","wikidata":"https://www.wikidata.org/wiki/Q180805","display_name":"Thyristor","level":3,"score":0.68395156},{"id":"https://openalex.org/C194777113","wikidata":"https://www.wikidata.org/wiki/Q1066563","display_name":"Integrated gate-commutated thyristor","level":4,"score":0.6766875},{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.59839106},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.58548796},{"id":"https://openalex.org/C12688097","wikidata":"https://www.wikidata.org/wiki/Q450402","display_name":"MOS-controlled thyristor","level":5,"score":0.580254},{"id":"https://openalex.org/C205483674","wikidata":"https://www.wikidata.org/wiki/Q3574961","display_name":"Electrostatic discharge","level":3,"score":0.5308132},{"id":"https://openalex.org/C161638520","wikidata":"https://www.wikidata.org/wiki/Q1189770","display_name":"Gate turn-off thyristor","level":5,"score":0.4421086},{"id":"https://openalex.org/C164401470","wikidata":"https://www.wikidata.org/wiki/Q7604168","display_name":"Static induction thyristor","level":5,"score":0.42781267},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.36038792},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.24057087},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.24043101},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.22130483},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.079642385},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.06786078},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"is_oa":true,"landing_page_url":"https://doi.org/10.1587/elex.16.20190626","pdf_url":"https://www.jstage.jst.go.jp/article/elex/16/24/16_16.20190626/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true}],"best_oa_location":{"is_oa":true,"landing_page_url":"https://doi.org/10.1587/elex.16.20190626","pdf_url":"https://www.jstage.jst.go.jp/article/elex/16/24/16_16.20190626/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true},"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.71,"display_name":"Affordable and clean energy"}],"grants":[],"datasets":[],"versions":[],"referenced_works_count":29,"referenced_works":["https://openalex.org/W1496709431","https://openalex.org/W1501886167","https://openalex.org/W1548582976","https://openalex.org/W1822741049","https://openalex.org/W1856967591","https://openalex.org/W1972330263","https://openalex.org/W1978527780","https://openalex.org/W1997439760","https://openalex.org/W2008520876","https://openalex.org/W2035308048","https://openalex.org/W2088401232","https://openalex.org/W2119939776","https://openalex.org/W2120909789","https://openalex.org/W2122761202","https://openalex.org/W2139194645","https://openalex.org/W2139836865","https://openalex.org/W2152685187","https://openalex.org/W2153017651","https://openalex.org/W2154350366","https://openalex.org/W2156764815","https://openalex.org/W2159134406","https://openalex.org/W2228527308","https://openalex.org/W2320907324","https://openalex.org/W2571003122","https://openalex.org/W2580886662","https://openalex.org/W2886013257","https://openalex.org/W2924617644","https://openalex.org/W3147940039","https://openalex.org/W4241070446"],"related_works":["https://openalex.org/W3201223521","https://openalex.org/W3100465988","https://openalex.org/W2989707304","https://openalex.org/W2953491022","https://openalex.org/W2903693248","https://openalex.org/W2540199004","https://openalex.org/W2111348629","https://openalex.org/W2110574891","https://openalex.org/W2063628798","https://openalex.org/W1602406754"],"abstract_inverted_index":{"A":[0],"novel":[1],"reverse-conducting":[2],"(RC)":[3],"silicon-on-insulator":[4],"lateral":[5],"insulated":[6],"gate":[7],"bipolar":[8],"transistor":[9],"(SOI-LIGBT)":[10],"is":[11,78],"proposed.":[12],"It":[13,40],"features":[14],"a":[15,21],"built-in":[16],"thyristor":[17,32,65],"formed":[18],"by":[19,108,119],"introducing":[20],"floating":[22],"P-well":[23],"surrounding":[24],"an":[25,67,90],"N+":[26],"collector.":[27],"The":[28],"realization":[29],"of":[30],"the":[31,44,49,54,59,64,72,75,86,93,97,103,113],"barely":[33],"increases":[34],"chip":[35],"area":[36],"or":[37],"complicates":[38],"fabrication.":[39],"helps":[41],"to":[42],"realize":[43],"RC":[45,114],"function":[46],"and":[47,102,112],"prevents":[48],"device":[50,95],"from":[51],"working":[52],"in":[53],"unipolar":[55],"mode,":[56],"which":[57],"eliminates":[58],"snapback":[60],"problem.":[61],"Moreover,":[62],"since":[63],"provides":[66],"electron":[68],"extraction":[69],"path":[70],"during":[71],"turn-off":[73,104],"operation,":[74],"switching":[76],"performance":[77],"improved.":[79],"Simulation":[80],"results":[81],"show":[82],"that,":[83],"compared":[84],"with":[85,89],"conventional":[87],"LIGBT":[88],"antiparallel":[91],"diode,":[92],"proposed":[94],"presents":[96],"reverse":[98],"recovery":[99],"charge":[100],"(Qrr)":[101],"loss":[105],"(Eoff)":[106],"reduced":[107],"more":[109],"than":[110],"30%,":[111],"voltage":[115],"drop":[116],"(VF)":[117],"decreased":[118],"about":[120],"0.1":[121],"V.":[122]},"cited_by_api_url":"https://api.openalex.org/works?filter=cites:W2989707304","counts_by_year":[{"year":2022,"cited_by_count":1}],"updated_date":"2024-12-24T07:40:28.675047","created_date":"2019-12-05"}