乐胖代购免代理版

{"id":"https://openalex.org/W2946658825","doi":"https://doi.org/10.1145/3316781.3317737","title":"A 3T/Cell Practical Embedded Nonvolatile Memory Supporting Symmetric Read and Write Access Based on Ferroelectric FETs","display_name":"A 3T/Cell Practical Embedded Nonvolatile Memory Supporting Symmetric Read and Write Access Based on Ferroelectric FETs","publication_year":2019,"publication_date":"2019-05-23","ids":{"openalex":"https://openalex.org/W2946658825","doi":"https://doi.org/10.1145/3316781.3317737","mag":"2946658825"},"language":"en","primary_location":{"is_oa":false,"landing_page_url":"https://doi.org/10.1145/3316781.3317737","pdf_url":null,"source":null,"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false},"type":"article","type_crossref":"proceedings-article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5081429680","display_name":"Juejian Wu","orcid":"https://orcid.org/0000-0001-9473-1995"},"institutions":[{"id":"https://openalex.org/I99065089","display_name":"Tsinghua University","ror":"https://ror.org/03cve4549","country_code":"CN","type":"education","lineage":["https://openalex.org/I99065089"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Juejian Wu","raw_affiliation_strings":["Tsinghua University, Beijing, China"],"affiliations":[{"raw_affiliation_string":"Tsinghua University, Beijing, China","institution_ids":["https://openalex.org/I99065089"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5042859357","display_name":"Hongtao Zhong","orcid":"https://orcid.org/0000-0003-2527-4246"},"institutions":[{"id":"https://openalex.org/I99065089","display_name":"Tsinghua University","ror":"https://ror.org/03cve4549","country_code":"CN","type":"education","lineage":["https://openalex.org/I99065089"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Hongtao Zhong","raw_affiliation_strings":["Tsinghua University, Beijing, China"],"affiliations":[{"raw_affiliation_string":"Tsinghua University, Beijing, China","institution_ids":["https://openalex.org/I99065089"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5075633314","display_name":"Kai Ni","orcid":"https://orcid.org/0000-0002-3628-3431"},"institutions":[{"id":"https://openalex.org/I107639228","display_name":"University of Notre Dame","ror":"https://ror.org/00mkhxb43","country_code":"US","type":"education","lineage":["https://openalex.org/I107639228"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Kai Ni","raw_affiliation_strings":["University of Notre Dame, IN, US"],"affiliations":[{"raw_affiliation_string":"University of Notre Dame, IN, US","institution_ids":["https://openalex.org/I107639228"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5045721867","display_name":"Yongpan Liu","orcid":"https://orcid.org/0000-0002-4892-2309"},"institutions":[{"id":"https://openalex.org/I99065089","display_name":"Tsinghua University","ror":"https://ror.org/03cve4549","country_code":"CN","type":"education","lineage":["https://openalex.org/I99065089"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yongpan Liu","raw_affiliation_strings":["Tsinghua University, Beijing, China"],"affiliations":[{"raw_affiliation_string":"Tsinghua University, Beijing, China","institution_ids":["https://openalex.org/I99065089"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5023755254","display_name":"Huazhong Yang","orcid":"https://orcid.org/0000-0003-2421-353X"},"institutions":[{"id":"https://openalex.org/I99065089","display_name":"Tsinghua University","ror":"https://ror.org/03cve4549","country_code":"CN","type":"education","lineage":["https://openalex.org/I99065089"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Huazhong Yang","raw_affiliation_strings":["Tsinghua University, Beijing, China"],"affiliations":[{"raw_affiliation_string":"Tsinghua University, Beijing, China","institution_ids":["https://openalex.org/I99065089"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100764674","display_name":"Xueqing Li","orcid":"https://orcid.org/0000-0002-8051-3345"},"institutions":[{"id":"https://openalex.org/I99065089","display_name":"Tsinghua University","ror":"https://ror.org/03cve4549","country_code":"CN","type":"education","lineage":["https://openalex.org/I99065089"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xueqing Li","raw_affiliation_strings":["Tsinghua University, Beijing, China"],"affiliations":[{"raw_affiliation_string":"Tsinghua University, Beijing, China","institution_ids":["https://openalex.org/I99065089"]}]}],"institution_assertions":[],"countries_distinct_count":2,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":2.93,"has_fulltext":true,"fulltext_origin":"ngrams","cited_by_count":9,"citation_normalized_percentile":{"value":0.824985,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":85,"max":86},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"6"},"is_retracted":false,"is_paratext":false,"primary_topic":{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9994,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9985,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/non-volatile-memory","display_name":"Non-Volatile Memory","score":0.78998005},{"id":"https://openalex.org/keywords/ferroelectric-ram","display_name":"Ferroelectric RAM","score":0.68518406},{"id":"https://openalex.org/keywords/memory-cell","display_name":"Memory cell","score":0.4967466}],"concepts":[{"id":"https://openalex.org/C177950962","wikidata":"https://www.wikidata.org/wiki/Q10997658","display_name":"Non-volatile memory","level":2,"score":0.78998005},{"id":"https://openalex.org/C161164327","wikidata":"https://www.wikidata.org/wiki/Q703656","display_name":"Ferroelectric RAM","level":4,"score":0.68518406},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.65404654},{"id":"https://openalex.org/C48044578","wikidata":"https://www.wikidata.org/wiki/Q727490","display_name":"Scalability","level":2,"score":0.6531051},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5453678},{"id":"https://openalex.org/C2994168587","wikidata":"https://www.wikidata.org/wiki/Q5295","display_name":"Random access memory","level":2,"score":0.5416158},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.51363987},{"id":"https://openalex.org/C79090758","wikidata":"https://www.wikidata.org/wiki/Q1045739","display_name":"Ferroelectricity","level":3,"score":0.50466526},{"id":"https://openalex.org/C2776638159","wikidata":"https://www.wikidata.org/wiki/Q18343761","display_name":"Memory cell","level":4,"score":0.4967466},{"id":"https://openalex.org/C82876162","wikidata":"https://www.wikidata.org/wiki/Q17096504","display_name":"Latency (audio)","level":2,"score":0.45088777},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.37881318},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.3708865},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.35304976},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.35175762},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.35151345},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.28594628},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.16058177},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.14233884},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.072208375},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"is_oa":false,"landing_page_url":"https://doi.org/10.1145/3316781.3317737","pdf_url":null,"source":null,"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.87}],"grants":[],"datasets":[],"versions":[],"referenced_works_count":36,"referenced_works":["https://openalex.org/W1519039476","https://openalex.org/W1916668514","https://openalex.org/W2001682737","https://openalex.org/W2019240782","https://openalex.org/W2057830845","https://openalex.org/W2081451611","https://openalex.org/W2085601491","https://openalex.org/W2112856774","https://openalex.org/W2125667472","https://openalex.org/W2224414959","https://openalex.org/W2342750693","https://openalex.org/W2407647853","https://openalex.org/W2426624872","https://openalex.org/W2433248078","https://openalex.org/W2537444166","https://openalex.org/W2583357209","https://openalex.org/W2622875686","https://openalex.org/W2730425383","https://openalex.org/W2744849844","https://openalex.org/W2785344708","https://openalex.org/W2786159202","https://openalex.org/W2787453651","https://openalex.org/W2790748954","https://openalex.org/W2792488046","https://openalex.org/W2799043997","https://openalex.org/W2885866622","https://openalex.org/W2886146119","https://openalex.org/W2893163116","https://openalex.org/W2895545069","https://openalex.org/W2899077824","https://openalex.org/W2904888043","https://openalex.org/W2913902313","https://openalex.org/W2919690119","https://openalex.org/W2922086978","https://openalex.org/W4230826845","https://openalex.org/W4255642092"],"related_works":["https://openalex.org/W4239770751","https://openalex.org/W3209704453","https://openalex.org/W2917388298","https://openalex.org/W2788525133","https://openalex.org/W2482369952","https://openalex.org/W2342993049","https://openalex.org/W2113422672","https://openalex.org/W2099729013","https://openalex.org/W2079003009","https://openalex.org/W1988281217"],"abstract_inverted_index":{"Making":[0],"embedded":[1],"memory":[2,8,63],"symmetric":[3,61],"provides":[4],"the":[5,32,41,72],"capability":[6],"of":[7,19,29,43,78],"access":[9],"in":[10,31,90,92],"both":[11],"rows":[12],"and":[13,22,56,80,88],"columns,":[14],"which":[15],"brings":[16],"new":[17,59],"opportunities":[18],"significant":[20,76],"energy":[21,79],"time":[23],"savings":[24],"if":[25],"only":[26],"a":[27,58],"portion":[28],"data":[30],"words":[33],"need":[34],"to":[35],"be":[36],"accessed.":[37],"This":[38],"work":[39],"investigates":[40],"use":[42],"ferroelectric":[44],"field-effect":[45],"transistors":[46],"(FeFETs),":[47],"an":[48],"emerging":[49],"nonvolatile,":[50],"low-power,":[51],"deeply-scalable,":[52],"CMOS-compatible":[53],"transistor":[54],"technology,":[55],"proposes":[57],"3-transistor/cell":[60],"nonvolatile":[62],"(SymNVM).":[64],"With":[65],"~1.67x":[66],"higher":[67],"density":[68],"as":[69,86],"compared":[70],"with":[71],"prior":[73],"FeFET":[74],"design,":[75],"benefits":[77],"latency":[81],"improvement":[82],"have":[83],"been":[84],"achieved,":[85],"evaluated":[87],"discussed":[89],"depth":[91],"this":[93],"paper.":[94]},"cited_by_api_url":"https://api.openalex.org/works?filter=cites:W2946658825","counts_by_year":[{"year":2022,"cited_by_count":2},{"year":2021,"cited_by_count":4},{"year":2020,"cited_by_count":2},{"year":2019,"cited_by_count":1}],"updated_date":"2024-12-09T08:35:44.314294","created_date":"2019-05-29"}