乐胖代购免代理版

{"id":"https://openalex.org/W2344948535","doi":"https://doi.org/10.1109/tvlsi.2015.2513369","title":"Built-In Self-Test Methodology With Statistical Analysis for Electrical Diagnosis of Wearout in a Static Random Access Memory Array","display_name":"Built-In Self-Test Methodology With Statistical Analysis for Electrical Diagnosis of Wearout in a Static Random Access Memory Array","publication_year":2016,"publication_date":"2016-02-08","ids":{"openalex":"https://openalex.org/W2344948535","doi":"https://doi.org/10.1109/tvlsi.2015.2513369","mag":"2344948535"},"language":"en","primary_location":{"is_oa":false,"landing_page_url":"https://doi.org/10.1109/tvlsi.2015.2513369","pdf_url":null,"source":{"id":"https://openalex.org/S37538908","display_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","issn_l":"1063-8210","issn":["1063-8210","1557-9999"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false},"type":"article","type_crossref":"journal-article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5057226516","display_name":"Woongrae Kim","orcid":null},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Woongrae Kim","raw_affiliation_strings":["School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA"],"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA","institution_ids":["https://openalex.org/I130701444"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5011064659","display_name":"Chang-Chih Chen","orcid":null},"institutions":[{"id":"https://openalex.org/I1342911587","display_name":"Oracle (United States)","ror":"https://ror.org/006c77m33","country_code":"US","type":"company","lineage":["https://openalex.org/I1342911587"]},{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Chang-Chih Chen","raw_affiliation_strings":["Oracle, Santa Clara, CA, USA","School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA"],"affiliations":[{"raw_affiliation_string":"Oracle, Santa Clara, CA, USA","institution_ids":["https://openalex.org/I1342911587"]},{"raw_affiliation_string":"School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA","institution_ids":["https://openalex.org/I130701444"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100733983","display_name":"Dae-Hyun Kim","orcid":"https://orcid.org/0000-0003-0801-0230"},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Dae-Hyun Kim","raw_affiliation_strings":["School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA"],"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA","institution_ids":["https://openalex.org/I130701444"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5032107826","display_name":"Linda Milor","orcid":"https://orcid.org/0000-0002-8244-4793"},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Linda Milor","raw_affiliation_strings":["School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA"],"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA","institution_ids":["https://openalex.org/I130701444"]}]}],"institution_assertions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.847,"has_fulltext":true,"fulltext_origin":"ngrams","cited_by_count":13,"citation_normalized_percentile":{"value":0.870298,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":89},"biblio":{"volume":"24","issue":"7","first_page":"2521","last_page":"2534"},"is_retracted":false,"is_paratext":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11032","display_name":"VLSI and Analog Circuit Testing","score":0.9999,"subfield":{"id":"https://openalex.org/subfields/1708","display_name":"Hardware and Architecture"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/built-in-self-test","display_name":"Built-in self-test","score":0.4938441},{"id":"https://openalex.org/keywords/electromigration","display_name":"Electromigration","score":0.4742388}],"concepts":[{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.8135958},{"id":"https://openalex.org/C152909973","wikidata":"https://www.wikidata.org/wiki/Q7804816","display_name":"Time-dependent gate oxide breakdown","level":5,"score":0.57281613},{"id":"https://openalex.org/C163164238","wikidata":"https://www.wikidata.org/wiki/Q2737027","display_name":"Failure rate","level":2,"score":0.5048345},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.49776697},{"id":"https://openalex.org/C2780980493","wikidata":"https://www.wikidata.org/wiki/Q181142","display_name":"Built-in self-test","level":2,"score":0.4938441},{"id":"https://openalex.org/C138055206","wikidata":"https://www.wikidata.org/wiki/Q1319010","display_name":"Electromigration","level":2,"score":0.4742388},{"id":"https://openalex.org/C530198007","wikidata":"https://www.wikidata.org/wiki/Q80831","display_name":"Integrated circuit","level":2,"score":0.42140278},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.36946613},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.36274874},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.35963622},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.25405526},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.20308974},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.15841818},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.09892142}],"mesh":[],"locations_count":1,"locations":[{"is_oa":false,"landing_page_url":"https://doi.org/10.1109/tvlsi.2015.2513369","pdf_url":null,"source":{"id":"https://openalex.org/S37538908","display_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","issn_l":"1063-8210","issn":["1063-8210","1557-9999"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false}],"best_oa_location":null,"sustainable_development_goals":[],"grants":[{"funder":"https://openalex.org/F4320332180","funder_display_name":"Defense Advanced Research Projects Agency","award_id":"HR0011-11-1-0011"}],"datasets":[],"versions":[],"referenced_works_count":30,"referenced_works":["https://openalex.org/W1483317440","https://openalex.org/W1569519759","https://openalex.org/W1604482631","https://openalex.org/W1966747106","https://openalex.org/W1970023301","https://openalex.org/W1986881933","https://openalex.org/W1996238674","https://openalex.org/W1998810909","https://openalex.org/W2003121593","https://openalex.org/W2021324282","https://openalex.org/W2039947128","https://openalex.org/W2042830732","https://openalex.org/W2043294426","https://openalex.org/W2046284437","https://openalex.org/W2055170789","https://openalex.org/W2063683432","https://openalex.org/W2069668939","https://openalex.org/W2082028150","https://openalex.org/W2110134128","https://openalex.org/W2115825784","https://openalex.org/W2116269802","https://openalex.org/W2116301815","https://openalex.org/W2118168173","https://openalex.org/W2132621842","https://openalex.org/W2145752244","https://openalex.org/W2168748939","https://openalex.org/W2171484465","https://openalex.org/W2545074889","https://openalex.org/W2896543104","https://openalex.org/W4251383832"],"related_works":["https://openalex.org/W4381800218","https://openalex.org/W4229007131","https://openalex.org/W2542708587","https://openalex.org/W2381557379","https://openalex.org/W2364197307","https://openalex.org/W2138118262","https://openalex.org/W2055638565","https://openalex.org/W2047120369","https://openalex.org/W2034853009","https://openalex.org/W2004615523"],"abstract_inverted_index":{"We":[0],"present":[1],"an":[2,29],"electrical":[3,75],"diagnosis":[4],"methodology":[5],"for":[6,66,87],"a":[7,111],"variety":[8],"of":[9,44,52,84,113,119],"wearout":[10,39,89,120,127],"mechanisms,":[11],"including":[12],"back-end":[13],"time-dependent":[14],"dielectric":[15],"breakdown":[16],"(TDDB),":[17],"electromigration,":[18],"stress-induced":[19],"voiding,":[20],"gate":[21],"oxide":[22],"TDDB,":[23],"and":[24,40,101,109],"bias":[25],"temperature":[26],"instability,":[27],"in":[28,71,124,130],"SRAM":[30,57],"array.":[31],"First,":[32],"the":[33,42,45,49,53,73,82,95,102,126,131],"built-in":[34],"self-test":[35],"(BIST)":[36],"system":[37],"detects":[38],"identifies":[41],"locations":[43],"faulty":[46,80],"cells.":[47],"Next,":[48],"physical":[50],"location":[51],"failure":[54,76,85,97,103],"sites":[55,65],"within":[56],"cells":[58],"is":[59,91,122],"determined.":[60],"There":[61],"are":[62],"some":[63],"fault":[64],"different":[67],"mechanisms":[68,129],"which":[69],"result":[70],"exactly":[72],"same":[74],"signature.":[77],"For":[78],"these":[79],"sites,":[81],"cause":[83],"probabilities":[86],"each":[88],"mechanism":[90],"estimated":[92],"by":[93,107],"matching":[94],"observed":[96],"rate":[98,104],"from":[99],"BIST":[100],"distribution":[105],"computed":[106],"simulation":[108],"as":[110],"function":[112],"circuit":[114],"use":[115],"scenarios.":[116],"The":[117],"estimation":[118],"distributions":[121],"helpful":[123],"determining":[125],"limiting":[128],"field.":[132]},"cited_by_api_url":"https://api.openalex.org/works?filter=cites:W2344948535","counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":3},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":1},{"year":2017,"cited_by_count":4},{"year":2016,"cited_by_count":1}],"updated_date":"2024-12-08T11:24:40.346592","created_date":"2016-06-24"}