乐胖代购免代理版

{"id":"https://openalex.org/W2792195532","doi":"https://doi.org/10.1109/isscc.2018.8310327","title":"32GHz resonant-fin transistors in 14nm FinFET technology","display_name":"32GHz resonant-fin transistors in 14nm FinFET technology","publication_year":2018,"publication_date":"2018-02-01","ids":{"openalex":"https://openalex.org/W2792195532","doi":"https://doi.org/10.1109/isscc.2018.8310327","mag":"2792195532"},"language":"en","primary_location":{"is_oa":false,"landing_page_url":"https://doi.org/10.1109/isscc.2018.8310327","pdf_url":null,"source":{"id":"https://openalex.org/S4363607897","display_name":"2022 IEEE International Solid- State Circuits Conference (ISSCC)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false},"type":"article","type_crossref":"proceedings-article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5051868217","display_name":"Bichoy Bahr","orcid":null},"institutions":[{"id":"https://openalex.org/I74760111","display_name":"Texas Instruments (United States)","ror":"https://ror.org/03vsmv677","country_code":"US","type":"company","lineage":["https://openalex.org/I74760111"]},{"id":"https://openalex.org/I63966007","display_name":"Massachusetts Institute of Technology","ror":"https://ror.org/042nb2s44","country_code":"US","type":"education","lineage":["https://openalex.org/I63966007"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Bichoy Bahr","raw_affiliation_strings":["Kilby Labs, Texas Instruments, Dallas, TX","Massachusetts Institute of Technology"],"affiliations":[{"raw_affiliation_string":"Kilby Labs, Texas Instruments, Dallas, TX","institution_ids":["https://openalex.org/I74760111"]},{"raw_affiliation_string":"Massachusetts Institute of Technology","institution_ids":["https://openalex.org/I63966007"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108051157","display_name":"Yanbo He","orcid":"https://orcid.org/0000-0002-9642-5104"},"institutions":[{"id":"https://openalex.org/I219193219","display_name":"Purdue University West Lafayette","ror":"https://ror.org/02dqehb95","country_code":"US","type":"education","lineage":["https://openalex.org/I219193219"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Yanbo He","raw_affiliation_strings":["Purdue University, West Lafayette, IN"],"affiliations":[{"raw_affiliation_string":"Purdue University, West Lafayette, IN","institution_ids":["https://openalex.org/I219193219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5075026956","display_name":"Zoran Krivokapi\u0107","orcid":"https://orcid.org/0000-0002-5405-7366"},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Zoran Krivokapic","raw_affiliation_strings":["GLOBALFOUNDRIES, Santa Clara, CA"],"affiliations":[{"raw_affiliation_string":"GLOBALFOUNDRIES, Santa Clara, CA","institution_ids":["https://openalex.org/I35662394"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5031558856","display_name":"Srinivasa Banna","orcid":null},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Srinivasa Banna","raw_affiliation_strings":["GLOBALFOUNDRIES, Santa Clara, CA"],"affiliations":[{"raw_affiliation_string":"GLOBALFOUNDRIES, Santa Clara, CA","institution_ids":["https://openalex.org/I35662394"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5066642077","display_name":"Dana Weinstein","orcid":"https://orcid.org/0000-0003-4024-8580"},"institutions":[{"id":"https://openalex.org/I219193219","display_name":"Purdue University West Lafayette","ror":"https://ror.org/02dqehb95","country_code":"US","type":"education","lineage":["https://openalex.org/I219193219"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Dana Weinstein","raw_affiliation_strings":["Purdue University, West Lafayette, IN"],"affiliations":[{"raw_affiliation_string":"Purdue University, West Lafayette, IN","institution_ids":["https://openalex.org/I219193219"]}]}],"institution_assertions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":1.352,"has_fulltext":true,"fulltext_origin":"ngrams","cited_by_count":20,"citation_normalized_percentile":{"value":0.716809,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":91},"biblio":{"volume":"36","issue":null,"first_page":"348","last_page":"350"},"is_retracted":false,"is_paratext":false,"primary_topic":{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9998,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9998,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10299","display_name":"Photonic and Optical Devices","score":0.9997,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11527","display_name":"3D IC and TSV technologies","score":0.9994,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/fin","display_name":"Fin","score":0.6339159}],"concepts":[{"id":"https://openalex.org/C91721477","wikidata":"https://www.wikidata.org/wiki/Q778612","display_name":"Fin","level":2,"score":0.6339159},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.571129},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5292843},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.4540447},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4419075},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.41598666},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.40750724},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.36233395},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.32025012},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.28833187},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.081573606},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.06387669}],"mesh":[],"locations_count":1,"locations":[{"is_oa":false,"landing_page_url":"https://doi.org/10.1109/isscc.2018.8310327","pdf_url":null,"source":{"id":"https://openalex.org/S4363607897","display_name":"2022 IEEE International Solid- State Circuits Conference (ISSCC)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.51,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"grants":[],"datasets":[],"versions":[],"referenced_works_count":7,"referenced_works":["https://openalex.org/W1989827134","https://openalex.org/W2023453077","https://openalex.org/W2060465860","https://openalex.org/W2092837758","https://openalex.org/W2170177912","https://openalex.org/W2927290191","https://openalex.org/W3103527158"],"related_works":["https://openalex.org/W4321379269","https://openalex.org/W4295791167","https://openalex.org/W3155023655","https://openalex.org/W2954455694","https://openalex.org/W2389541158","https://openalex.org/W2382897531","https://openalex.org/W2092177242","https://openalex.org/W2019513361","https://openalex.org/W2000473227","https://openalex.org/W1556217118"],"abstract_inverted_index":{"Monolithic":[0],"integration":[1],"of":[2,77,85,112,160],"microelectromechanical":[3],"resonators":[4,72,187],"in":[5,17,70,109,150,172],"IC":[6,87],"technology":[7],"has":[8],"been":[9,41],"explored":[10],"extensively":[11],"over":[12],"the":[13,18,55,78,86,110,144,156,173],"past":[14],"few":[15],"decades":[16],"effort":[19],"to":[20,122,164],"achieve":[21],"on-chip":[22],"clocks,":[23],"RF":[24],"filters,":[25],"and":[26,29,38,43,48,68,81,95,103,126,168],"physical,":[27],"chemical,":[28],"biological":[30],"sensors.":[31],"Various":[32],"approaches":[33],"for":[34,134],"resonator":[35,106],"integration,":[36],"actuation,":[37],"sensing":[39,118],"have":[40],"proposed":[42],"demonstrated,":[44],"targeting":[45],"high":[46,49,135],"Q":[47],"frequency":[50,100,136],"performance":[51],"[1].":[52],"These":[53,90],"include":[54],"\"MEMS-last\"":[56],"approach":[57],"with":[58,75,178,188],"low":[59],"temperature":[60],"materials":[61,84],"deposited":[62],"on":[63],"complete":[64],"CMOS":[65,176],"chips":[66],"[2,3],":[67],"\"MEMS-in-the-middle\"":[69],"which":[71,129],"are":[73],"defined":[74],"post-processing":[76,180],"front":[79],"end":[80,83],"back":[82],"stack":[88,177],"[4].":[89],"methods":[91],"require":[92],"additional":[93],"processing":[94],"packaging":[96],"steps":[97],"that":[98],"make":[99],"scaling":[101],"challenging":[102],"may":[104],"limit":[105],"Q.":[107],"Meanwhile,":[108],"case":[111],"monolithically":[113],"integrated":[114],"MEMS":[115],"resonators,":[116],"transistor":[117],"can":[119,130],"be":[120],"used":[121],"enhance":[123],"transduction":[124],"efficiency":[125],"reduce":[127],"parasitics,":[128],"prohibit":[131],"2-port":[132],"detection":[133],"resonance":[137],"[5].":[138],"In":[139],"this":[140],"work,":[141],"we":[142],"introduce":[143],"Resonant":[145],"Fin":[146],"Transistor":[147],"(RFT)":[148],"fabricated":[149],"GLOBALFOUNDRIES":[151],"14nm":[152],"FinFET":[153],"technology,":[154],"leveraging":[155],"vertical":[157],"3D":[158],"geometry":[159],"FinFETs":[161],"(Fig.":[162],"21.3.1)":[163],"efficiently":[165],"confine,":[166],"drive,":[167],"sense":[169],"acoustic":[170],"vibrations":[171],"solid":[174],"(unreleased)":[175],"no":[179],"or":[181],"custom":[182],"packaging.":[183],"We":[184],"demonstrate":[185],"32GHz":[186],"Q~49,000.":[189]},"cited_by_api_url":"https://api.openalex.org/works?filter=cites:W2792195532","counts_by_year":[{"year":2022,"cited_by_count":6},{"year":2021,"cited_by_count":6},{"year":2020,"cited_by_count":5},{"year":2019,"cited_by_count":2},{"year":2018,"cited_by_count":1}],"updated_date":"2025-01-06T10:13:53.527809","created_date":"2018-03-29"}