{"id":"https://openalex.org/W2149946537","doi":"https://doi.org/10.1109/ismvl.2007.25","title":"Four-State Magnetic Random Access Memory and Ternary Content Addressable Memory Using CoFe-Based Magnetic Tunnel Junctions","display_name":"Four-State Magnetic Random Access Memory and Ternary Content Addressable Memory Using CoFe-Based Magnetic Tunnel Junctions","publication_year":2007,"publication_date":"2007-05-01","ids":{"openalex":"https://openalex.org/W2149946537","doi":"https://doi.org/10.1109/ismvl.2007.25","mag":"2149946537"},"language":"en","primary_location":{"is_oa":false,"landing_page_url":"https://doi.org/10.1109/ismvl.2007.25","pdf_url":null,"source":{"id":"https://openalex.org/S4210220027","display_name":"Proceedings/Proceedings - International Symposium on Multiple-Valued Logic","issn_l":"0195-623X","issn":["0195-623X","2378-2226"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false},"type":"article","type_crossref":"proceedings-article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5060447429","display_name":"Tetsuya Uemura","orcid":"https://orcid.org/0000-0003-0451-7376"},"institutions":[{"id":"https://openalex.org/I205349734","display_name":"Hokkaido University","ror":"https://ror.org/02e16g702","country_code":"JP","type":"education","lineage":["https://openalex.org/I205349734"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"T. Uemura","raw_affiliation_strings":["Hokkaido University, Japan"],"affiliations":[{"raw_affiliation_string":"Hokkaido University, Japan","institution_ids":["https://openalex.org/I205349734"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5027269249","display_name":"Takao Marukame","orcid":"https://orcid.org/0000-0001-5954-828X"},"institutions":[{"id":"https://openalex.org/I205349734","display_name":"Hokkaido University","ror":"https://ror.org/02e16g702","country_code":"JP","type":"education","lineage":["https://openalex.org/I205349734"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"T. Marukame","raw_affiliation_strings":["Hokkaido University, Japan"],"affiliations":[{"raw_affiliation_string":"Hokkaido University, Japan","institution_ids":["https://openalex.org/I205349734"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5052766404","display_name":"Ken-ichi Matsuda","orcid":"https://orcid.org/0000-0003-2891-2530"},"institutions":[{"id":"https://openalex.org/I205349734","display_name":"Hokkaido University","ror":"https://ror.org/02e16g702","country_code":"JP","type":"education","lineage":["https://openalex.org/I205349734"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"K.-i. Matsuda","raw_affiliation_strings":["Hokkaido University, Japan"],"affiliations":[{"raw_affiliation_string":"Hokkaido University, Japan","institution_ids":["https://openalex.org/I205349734"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5101917336","display_name":"M. Yamamoto","orcid":"https://orcid.org/0000-0003-1585-997X"},"institutions":[{"id":"https://openalex.org/I205349734","display_name":"Hokkaido University","ror":"https://ror.org/02e16g702","country_code":"JP","type":"education","lineage":["https://openalex.org/I205349734"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"M. Yamamoto","raw_affiliation_strings":["Hokkaido University, Japan"],"affiliations":[{"raw_affiliation_string":"Hokkaido University, Japan","institution_ids":["https://openalex.org/I205349734"]}]}],"institution_assertions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":true,"fulltext_origin":"ngrams","cited_by_count":7,"citation_normalized_percentile":{"value":0.530928,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":80,"max":81},"biblio":{"volume":null,"issue":null,"first_page":"49","last_page":"49"},"is_retracted":false,"is_paratext":false,"primary_topic":{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":0.9997,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":0.9997,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9911,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9902,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/tunnel-magnetoresistance","display_name":"Tunnel magnetoresistance","score":0.47148228}],"concepts":[{"id":"https://openalex.org/C64452783","wikidata":"https://www.wikidata.org/wiki/Q1524945","display_name":"Ternary operation","level":2,"score":0.55082136},{"id":"https://openalex.org/C56202322","wikidata":"https://www.wikidata.org/wiki/Q1884383","display_name":"Tunnel magnetoresistance","level":3,"score":0.47148228},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.46969795},{"id":"https://openalex.org/C155058782","wikidata":"https://www.wikidata.org/wiki/Q66468430","display_name":"Remanence","level":4,"score":0.4511324},{"id":"https://openalex.org/C117958382","wikidata":"https://www.wikidata.org/wiki/Q58347","display_name":"Magnetoresistance","level":3,"score":0.42494884},{"id":"https://openalex.org/C53442348","wikidata":"https://www.wikidata.org/wiki/Q745101","display_name":"Content-addressable memory","level":3,"score":0.41296196},{"id":"https://openalex.org/C32546565","wikidata":"https://www.wikidata.org/wiki/Q856711","display_name":"Magnetization","level":3,"score":0.39691755},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.37527105},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.35641098},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.33056092},{"id":"https://openalex.org/C11413529","wikidata":"https://www.wikidata.org/wiki/Q8366","display_name":"Algorithm","level":1,"score":0.32804322},{"id":"https://openalex.org/C115260700","wikidata":"https://www.wikidata.org/wiki/Q11408","display_name":"Magnetic field","level":2,"score":0.29289168},{"id":"https://openalex.org/C82217956","wikidata":"https://www.wikidata.org/wiki/Q184207","display_name":"Ferromagnetism","level":2,"score":0.22998062},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.22856367},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.13919902},{"id":"https://openalex.org/C50644808","wikidata":"https://www.wikidata.org/wiki/Q192776","display_name":"Artificial neural network","level":2,"score":0.0},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"is_oa":false,"landing_page_url":"https://doi.org/10.1109/ismvl.2007.25","pdf_url":null,"source":{"id":"https://openalex.org/S4210220027","display_name":"Proceedings/Proceedings - International Symposium on Multiple-Valued Logic","issn_l":"0195-623X","issn":["0195-623X","2378-2226"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false}],"best_oa_location":null,"sustainable_development_goals":[],"grants":[],"datasets":[],"versions":[],"referenced_works_count":18,"referenced_works":["https://openalex.org/W1946188354","https://openalex.org/W1982247831","https://openalex.org/W1991813033","https://openalex.org/W2039780806","https://openalex.org/W2068505962","https://openalex.org/W2078173465","https://openalex.org/W2097703969","https://openalex.org/W2097843706","https://openalex.org/W2101474368","https://openalex.org/W2105178422","https://openalex.org/W2142727034","https://openalex.org/W2154699669","https://openalex.org/W2156242836","https://openalex.org/W2157434337","https://openalex.org/W2163958441","https://openalex.org/W2169856780","https://openalex.org/W2169950191","https://openalex.org/W2404421410"],"related_works":["https://openalex.org/W3197207674","https://openalex.org/W2899116713","https://openalex.org/W2389658853","https://openalex.org/W2086473242","https://openalex.org/W2065896673","https://openalex.org/W2042935703","https://openalex.org/W2037742179","https://openalex.org/W2032091983","https://openalex.org/W2031406206","https://openalex.org/W14112068"],"abstract_inverted_index":{"A":[0],"four-state":[1],"magnetic":[2,33,100],"random":[3],"access":[4],"memory":[5,11],"(MRAM)":[6],"and":[7],"ternary":[8],"content":[9],"addressable":[10],"(TCAM)":[12],"were":[13],"developed":[14],"using":[15],"epitaxial":[16],"Co":[17,89],"50":[20,24,28,32,92,96],"Fe":[21,29,93],"/MgO/Co":[25],"tunnel":[34,38],"junctions":[35],"with":[36,62],"a":[37,138],"magnetoresistance":[39],"(TMR)":[40],"ratio":[41],"of":[42,65,84,116,123],"145%":[43],"at":[44,81],"room":[45],"temperature":[46],"(RT).":[47],"Four":[48],"remanent":[49],"magnetization":[50,114],"states":[51],"in":[52,70],"the":[53,59,66,85,99,105,113,117,124,133,143],"single-crystalline":[54],"CoS0FeS0":[55],"electrode,":[56],"due":[57],"to":[58,111,136,142],"cubic":[60],"anisotropy":[61],"easy":[63],"axes":[64],"(110)":[67,106],"directions,":[68],"result":[69],"four":[71],"possible":[72,110],"angular-dependent":[73],"TMRs,":[74],"each":[75],"separated":[76],"by":[77],"more":[78],"than":[79],"20%":[80],"RT.":[82],"Analysis":[83],"asteroid":[86],"curve":[87],"for":[88],"indicated":[97],"that":[98],"field":[101],"along":[102],"22.5deg":[103],"from":[104],"directions":[107],"made":[108],"it":[109],"change":[112],"direction":[115],"selected":[118],"cell":[119,131],"without":[120],"disturbing":[121],"those":[122],"half-selected":[125],"cells.":[126],"The":[127],"proposed":[128],"non-volatile":[129],"TCAM":[130],"reduced":[132],"device":[134],"count":[135],"5,":[137],"value":[139],"1/3":[140],"compared":[141],"conventional":[144],"CMOS-based":[145],"TCAMs.":[146]},"cited_by_api_url":"https://api.openalex.org/works?filter=cites:W2149946537","counts_by_year":[{"year":2021,"cited_by_count":1},{"year":2018,"cited_by_count":3},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":2}],"updated_date":"2024-12-08T05:10:15.182456","created_date":"2016-06-24"}