{"id":"https://openalex.org/W2802500638","doi":"https://doi.org/10.1109/iscas.2018.8351577","title":"A Novel Sensing Circuit with Large Sensing Margin for Embedded Spin-Transfer Torque MRAMs","display_name":"A Novel Sensing Circuit with Large Sensing Margin for Embedded Spin-Transfer Torque MRAMs","publication_year":2018,"publication_date":"2018-05-01","ids":{"openalex":"https://openalex.org/W2802500638","doi":"https://doi.org/10.1109/iscas.2018.8351577","mag":"2802500638"},"language":"en","primary_location":{"is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2018.8351577","pdf_url":null,"source":{"id":"https://openalex.org/S4363604393","display_name":"2022 IEEE International Symposium on Circuits and Systems (ISCAS)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_indexed_in_scopus":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false},"type":"article","type_crossref":"proceedings-article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5072312486","display_name":"Leila Bagheriye","orcid":"https://orcid.org/0000-0003-1605-5850"},"institutions":[{"id":"https://openalex.org/I99861883","display_name":"University of Zanjan","ror":"https://ror.org/05e34ej29","country_code":"IR","type":"funder","lineage":["https://openalex.org/I99861883"]}],"countries":["IR"],"is_corresponding":false,"raw_author_name":"Leila Bagheriye","raw_affiliation_strings":["Department of Electrical Engineering, University of Zanjan, Zanjan, Iran"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, University of Zanjan, Zanjan, Iran","institution_ids":["https://openalex.org/I99861883"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5017596278","display_name":"Siroos Toofan","orcid":"https://orcid.org/0000-0002-1306-9301"},"institutions":[{"id":"https://openalex.org/I99861883","display_name":"University of Zanjan","ror":"https://ror.org/05e34ej29","country_code":"IR","type":"funder","lineage":["https://openalex.org/I99861883"]}],"countries":["IR"],"is_corresponding":false,"raw_author_name":"Siroos Toofan","raw_affiliation_strings":["Department of Electrical Engineering, University of Zanjan, Zanjan, Iran"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, University of Zanjan, Zanjan, Iran","institution_ids":["https://openalex.org/I99861883"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5037472767","display_name":"Roghayeh Saeidi","orcid":"https://orcid.org/0000-0001-6505-8623"},"institutions":[{"id":"https://openalex.org/I4210102178","display_name":"ICT Research Institute","ror":"https://ror.org/01a3g2z22","country_code":"IR","type":"funder","lineage":["https://openalex.org/I4210102178"]}],"countries":["IR"],"is_corresponding":false,"raw_author_name":"Roghayeh Saeidi","raw_affiliation_strings":["Iran Telecommunication Research Center, Tehran, Iran"],"affiliations":[{"raw_affiliation_string":"Iran Telecommunication Research Center, Tehran, Iran","institution_ids":["https://openalex.org/I4210102178"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5043716992","display_name":"Farshad Moradi","orcid":"https://orcid.org/0000-0001-7077-8545"},"institutions":[{"id":"https://openalex.org/I204337017","display_name":"Aarhus University","ror":"https://ror.org/01aj84f44","country_code":"DK","type":"funder","lineage":["https://openalex.org/I204337017"]}],"countries":["DK"],"is_corresponding":false,"raw_author_name":"Farshad Moradi","raw_affiliation_strings":["Department of Engineering, Aarhus University, Aarhus, Denmark"],"affiliations":[{"raw_affiliation_string":"Department of Engineering, Aarhus University, Aarhus, Denmark","institution_ids":["https://openalex.org/I204337017"]}]}],"institution_assertions":[],"countries_distinct_count":2,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":5.434,"has_fulltext":true,"fulltext_origin":"ngrams","cited_by_count":7,"citation_normalized_percentile":{"value":0.960736,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":82,"max":83},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"5"},"is_retracted":false,"is_paratext":false,"primary_topic":{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":0.9999,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":0.9999,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9994,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10382","display_name":"Quantum and electron transport phenomena","score":0.999,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/spin-transfer-torque","display_name":"Spin-transfer torque","score":0.8027178},{"id":"https://openalex.org/keywords/margin","display_name":"Margin (machine learning)","score":0.6922303},{"id":"https://openalex.org/keywords/magnetoresistive-random-access-memory","display_name":"Magnetoresistive random-access memory","score":0.6435249},{"id":"https://openalex.org/keywords/process-variation","display_name":"Process Variation","score":0.43077374}],"concepts":[{"id":"https://openalex.org/C609986","wikidata":"https://www.wikidata.org/wiki/Q844840","display_name":"Spin-transfer torque","level":4,"score":0.8027178},{"id":"https://openalex.org/C774472","wikidata":"https://www.wikidata.org/wiki/Q6760393","display_name":"Margin (machine learning)","level":2,"score":0.6922303},{"id":"https://openalex.org/C46891859","wikidata":"https://www.wikidata.org/wiki/Q1061546","display_name":"Magnetoresistive random-access memory","level":3,"score":0.6435249},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.5919723},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5612986},{"id":"https://openalex.org/C144171764","wikidata":"https://www.wikidata.org/wiki/Q48103","display_name":"Torque","level":2,"score":0.54633254},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.49350703},{"id":"https://openalex.org/C186370098","wikidata":"https://www.wikidata.org/wiki/Q442787","display_name":"Energy (signal processing)","level":2,"score":0.44558325},{"id":"https://openalex.org/C93389723","wikidata":"https://www.wikidata.org/wiki/Q7247313","display_name":"Process variation","level":3,"score":0.43077374},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.40995649},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3933591},{"id":"https://openalex.org/C2994168587","wikidata":"https://www.wikidata.org/wiki/Q5295","display_name":"Random access memory","level":2,"score":0.33487532},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.30068803},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.16704318},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.15825325},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.1280629},{"id":"https://openalex.org/C32546565","wikidata":"https://www.wikidata.org/wiki/Q856711","display_name":"Magnetization","level":3,"score":0.11833367},{"id":"https://openalex.org/C115260700","wikidata":"https://www.wikidata.org/wiki/Q11408","display_name":"Magnetic field","level":2,"score":0.08748424},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C119857082","wikidata":"https://www.wikidata.org/wiki/Q2539","display_name":"Machine learning","level":1,"score":0.0},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2018.8351577","pdf_url":null,"source":{"id":"https://openalex.org/S4363604393","display_name":"2022 IEEE International Symposium on Circuits and Systems (ISCAS)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_indexed_in_scopus":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.84}],"grants":[],"datasets":[],"versions":[],"referenced_works_count":21,"referenced_works":["https://openalex.org/W142327980","https://openalex.org/W1566433644","https://openalex.org/W1967035245","https://openalex.org/W1984842310","https://openalex.org/W1996356878","https://openalex.org/W1998798369","https://openalex.org/W2029712422","https://openalex.org/W2040579068","https://openalex.org/W2056511998","https://openalex.org/W2057386187","https://openalex.org/W2069795715","https://openalex.org/W2091773052","https://openalex.org/W2159904000","https://openalex.org/W2160372845","https://openalex.org/W2290734434","https://openalex.org/W2433252002","https://openalex.org/W2510112886","https://openalex.org/W2533706950","https://openalex.org/W2539008933","https://openalex.org/W2543205889","https://openalex.org/W2549733628"],"related_works":["https://openalex.org/W4388285079","https://openalex.org/W4281561022","https://openalex.org/W4235980920","https://openalex.org/W3006384944","https://openalex.org/W2733919783","https://openalex.org/W2546997659","https://openalex.org/W2425808153","https://openalex.org/W2404332818","https://openalex.org/W2342993049","https://openalex.org/W2188761345"],"abstract_inverted_index":{"Spin-Transfer":[0],"Torque":[1],"Magnetic":[2],"Random":[3],"Access":[4],"Memory":[5],"(STT-MRAM)":[6],"has":[7],"emerged":[8],"as":[9],"a":[10,26,51,59,74],"promising":[11],"candidate":[12],"for":[13,108],"next-generation":[14],"computing":[15],"systems.":[16],"However,":[17],"with":[18,46,54,75,86],"increasing":[19],"process":[20],"variation":[21],"and":[22,38,58,73,91,105,112],"decreasing":[23],"supply":[24],"voltage,":[25],"big":[27],"design":[28],"challenge":[29],"of":[30],"embedded":[31],"STT-MRAMs":[32],"is":[33,63],"to":[34,44],"guarantee":[35],"negligible":[36],"read-disturbance":[37],"high":[39,60],"yield.":[40],"In":[41],"this":[42],"paper,":[43],"deal":[45],"the":[47,67,87,92,99,115],"read":[48,78],"reliability":[49],"challenge,":[50],"sensing":[52,61,68,89,96],"circuit":[53],"strong":[55],"positive":[56],"feedback":[57],"margin":[62,69],"proposed.":[64],"It":[65],"improves":[66],"(SM)":[70],"by":[71],"10.42\u00d7/3.3\u00d7":[72],"1.24\u00d7/1.59\u00d7":[76],"lower":[77],"energy":[79],"at":[80],"iso-sensing":[81],"time":[82],"(2ns)":[83],"in":[84],"comparison":[85],"conventional":[88],"scheme":[90,101],"state-of-the":[93],"art":[94],"current-sampling-based":[95],"circuit.":[97],"Moreover":[98],"proposed":[100],"supports":[102],"six":[103],"sigma":[104],"higher":[106],"yield":[107],"both":[109],"states":[110],"0":[111],"1,":[113],"while":[114],"compared":[116],"schems":[117],"fail.":[118]},"abstract_inverted_index_v3":null,"cited_by_api_url":"https://api.openalex.org/works?filter=cites:W2802500638","counts_by_year":[{"year":2023,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":2},{"year":2018,"cited_by_count":2}],"updated_date":"2025-04-16T10:53:06.985043","created_date":"2018-05-17"}