乐胖代购免代理版

{"id":"https://openalex.org/W2512417767","doi":"https://doi.org/10.1109/iscas.2016.7527167","title":"Low power and roboust FinFET SRAM cell using independent gate control","display_name":"Low power and roboust FinFET SRAM cell using independent gate control","publication_year":2016,"publication_date":"2016-05-01","ids":{"openalex":"https://openalex.org/W2512417767","doi":"https://doi.org/10.1109/iscas.2016.7527167","mag":"2512417767"},"language":"en","primary_location":{"is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2016.7527167","pdf_url":null,"source":{"id":"https://openalex.org/S4363604393","display_name":"2022 IEEE International Symposium on Circuits and Systems (ISCAS)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false},"type":"article","type_crossref":"proceedings-article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5072312486","display_name":"Leila Bagheriye","orcid":"https://orcid.org/0000-0003-1605-5850"},"institutions":[{"id":"https://openalex.org/I99861883","display_name":"University of Zanjan","ror":"https://ror.org/05e34ej29","country_code":"IR","type":"education","lineage":["https://openalex.org/I99861883"]}],"countries":["IR"],"is_corresponding":false,"raw_author_name":"Leila Bagheriye","raw_affiliation_strings":["Department of Electrical Engineering, University of Zanjan, Zanjan, Iran"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, University of Zanjan, Zanjan, Iran","institution_ids":["https://openalex.org/I99861883"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5037472767","display_name":"Roghayeh Saeidi","orcid":"https://orcid.org/0000-0001-6505-8623"},"institutions":[{"id":"https://openalex.org/I4210102178","display_name":"ICT Research Institute","ror":"https://ror.org/01a3g2z22","country_code":"IR","type":"facility","lineage":["https://openalex.org/I4210102178"]}],"countries":["IR"],"is_corresponding":false,"raw_author_name":"Roghayeh Saeidi","raw_affiliation_strings":["Iran Telecommunication Research Center, Tehran, Iran"],"affiliations":[{"raw_affiliation_string":"Iran Telecommunication Research Center, Tehran, Iran","institution_ids":["https://openalex.org/I4210102178"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5017596278","display_name":"Siroos Toofan","orcid":"https://orcid.org/0000-0002-1306-9301"},"institutions":[{"id":"https://openalex.org/I99861883","display_name":"University of Zanjan","ror":"https://ror.org/05e34ej29","country_code":"IR","type":"education","lineage":["https://openalex.org/I99861883"]}],"countries":["IR"],"is_corresponding":false,"raw_author_name":"Siroos Toofan","raw_affiliation_strings":["Department of Electrical Engineering, University of Zanjan, Zanjan, Iran"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, University of Zanjan, Zanjan, Iran","institution_ids":["https://openalex.org/I99861883"]}]}],"institution_assertions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":1.023,"has_fulltext":true,"fulltext_origin":"ngrams","cited_by_count":4,"citation_normalized_percentile":{"value":0.574706,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":79,"max":81},"biblio":{"volume":null,"issue":null,"first_page":"49","last_page":"52"},"is_retracted":false,"is_paratext":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9999,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[],"concepts":[{"id":"https://openalex.org/C197162436","wikidata":"https://www.wikidata.org/wiki/Q83908","display_name":"NMOS logic","level":4,"score":0.9171424},{"id":"https://openalex.org/C27050352","wikidata":"https://www.wikidata.org/wiki/Q173605","display_name":"PMOS logic","level":4,"score":0.86732507},{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.6446652},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.59636974},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.5754032},{"id":"https://openalex.org/C135402231","wikidata":"https://www.wikidata.org/wiki/Q898440","display_name":"Dissipation","level":2,"score":0.5667891},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5307415},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.49031928},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.48554227},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.479294},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.47915715},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4453444},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.39968854},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.38691953},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.36590642},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.31163},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.21244591},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2016.7527167","pdf_url":null,"source":{"id":"https://openalex.org/S4363604393","display_name":"2022 IEEE International Symposium on Circuits and Systems (ISCAS)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.83}],"grants":[],"datasets":[],"versions":[],"referenced_works_count":9,"referenced_works":["https://openalex.org/W142327980","https://openalex.org/W1972177424","https://openalex.org/W2029383304","https://openalex.org/W2096029841","https://openalex.org/W2098286658","https://openalex.org/W2113677113","https://openalex.org/W2114346440","https://openalex.org/W2121885371","https://openalex.org/W2161637772"],"related_works":["https://openalex.org/W4386261925","https://openalex.org/W2379197520","https://openalex.org/W2263373136","https://openalex.org/W2160067645","https://openalex.org/W2082944690","https://openalex.org/W2048420745","https://openalex.org/W2023334077","https://openalex.org/W2005494397","https://openalex.org/W1914349328","https://openalex.org/W1742453416"],"abstract_inverted_index":{"In":[0],"this":[1],"paper,":[2],"we":[3,42],"propose":[4],"a":[5],"robust":[6],"FinFET":[7],"SRAM":[8],"design":[9,21],"with":[10],"pMOS":[11],"access":[12],"transistors":[13],"using":[14],"independent":[15],"gate":[16,65],"(IG)":[17],"control":[18],"method.":[19],"This":[20],"is":[22],"performed":[23],"by":[24],"dynamically":[25],"adjusting":[26],"the":[27,72,76,83],"back-gate":[28],"(BG)":[29],"voltages":[30],"of":[31,67],"pull-down":[32],"(PD)":[33],"trans":[34],"istors.":[35],"For":[36],"generating":[37],"optimum":[38],"PD,":[39],"BG":[40],"voltages,":[41],"use":[43],"an":[44],"extra":[45],"write":[46],"driver,":[47],"predischarge":[48],"circuit":[49],"and":[50,56,80,82],"nMOS":[51],"switches":[52],"for":[53,63],"write,":[54],"hold":[55],"read":[57,78],"operation":[58],"respectively.":[59],"Mixed-mode":[60],"TCAD":[61],"simulations":[62],"physical":[64],"length":[66],"22":[68],"nm,":[69],"indicate":[70],"that":[71],"proposed":[73],"cell":[74],"has":[75],"highest":[77],"SNM":[79],"writeability,":[81],"least":[84],"static":[85],"power":[86],"dissipation":[87],"than":[88],"recently":[89],"reported":[90],"IG":[91],"cells.":[92]},"cited_by_api_url":"https://api.openalex.org/works?filter=cites:W2512417767","counts_by_year":[{"year":2021,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":2}],"updated_date":"2024-12-10T09:28:57.514585","created_date":"2016-09-16"}