{"id":"https://openalex.org/W2067330305","doi":"https://doi.org/10.1109/icicdt.2012.6232868","title":"Variability in Fully Depleted MOSFETs","display_name":"Variability in Fully Depleted MOSFETs","publication_year":2012,"publication_date":"2012-05-01","ids":{"openalex":"https://openalex.org/W2067330305","doi":"https://doi.org/10.1109/icicdt.2012.6232868","mag":"2067330305"},"language":"en","primary_location":{"is_oa":false,"landing_page_url":"https://doi.org/10.1109/icicdt.2012.6232868","pdf_url":null,"source":null,"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false},"type":"article","type_crossref":"proceedings-article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5019983362","display_name":"M. Vinet","orcid":"https://orcid.org/0000-0001-6757-295X"},"institutions":[],"countries":["US"],"is_corresponding":false,"raw_author_name":"M. Vinet","raw_affiliation_strings":["CEA-LETI, 257 Fuller Rd, 12203 Albany, USA"],"affiliations":[{"raw_affiliation_string":"CEA-LETI, 257 Fuller Rd, 12203 Albany, USA","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111917208","display_name":"Terence B. Hook","orcid":null},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"T. Hook","raw_affiliation_strings":["IBM Microelectronics, 257 Fuller Rd, 12203 Albany, USA"],"affiliations":[{"raw_affiliation_string":"IBM Microelectronics, 257 Fuller Rd, 12203 Albany, USA","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5011044726","display_name":"Y. Le Tiec","orcid":null},"institutions":[{"id":"https://openalex.org/I4210150049","display_name":"CEA LETI","ror":"https://ror.org/04mf0wv34","country_code":"FR","type":"government","lineage":["https://openalex.org/I2738703131","https://openalex.org/I4210117989","https://openalex.org/I4210150049"]},{"id":"https://openalex.org/I2738703131","display_name":"Commissariat \u00e0 l'\u00c9nergie Atomique et aux \u00c9nergies Alternatives","ror":"https://ror.org/00jjx8s55","country_code":"FR","type":"government","lineage":["https://openalex.org/I2738703131"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Y. Le Tiec","raw_affiliation_strings":["CEA-LETI, France"],"affiliations":[{"raw_affiliation_string":"CEA-LETI, France","institution_ids":["https://openalex.org/I4210150049","https://openalex.org/I2738703131"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5008532584","display_name":"Richard Murphy","orcid":"https://orcid.org/0000-0002-3063-515X"},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"R. Murphy","raw_affiliation_strings":["IBM Microelectronics, 257 Fuller Rd, 12203 Albany, USA"],"affiliations":[{"raw_affiliation_string":"IBM Microelectronics, 257 Fuller Rd, 12203 Albany, USA","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5045453807","display_name":"S. Ponoth","orcid":null},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"S. Ponoth","raw_affiliation_strings":["IBM Microelectronics, 257 Fuller Rd, 12203 Albany, USA"],"affiliations":[{"raw_affiliation_string":"IBM Microelectronics, 257 Fuller Rd, 12203 Albany, USA","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5050302547","display_name":"L. Grenouillet","orcid":"https://orcid.org/0000-0001-6721-0393"},"institutions":[],"countries":["US"],"is_corresponding":false,"raw_author_name":"L. Grenouillet","raw_affiliation_strings":["CEA-LETI, 257 Fuller Rd, 12203 Albany, USA"],"affiliations":[{"raw_affiliation_string":"CEA-LETI, 257 Fuller Rd, 12203 Albany, USA","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5009510805","display_name":"R. Wacquez","orcid":null},"institutions":[],"countries":["US"],"is_corresponding":false,"raw_author_name":"R. Wacquez","raw_affiliation_strings":["CEA-LETI, 257 Fuller Rd, 12203 Albany, USA"],"affiliations":[{"raw_affiliation_string":"CEA-LETI, 257 Fuller Rd, 12203 Albany, USA","institution_ids":[]}]}],"institution_assertions":[],"countries_distinct_count":2,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.346,"has_fulltext":true,"fulltext_origin":"ngrams","cited_by_count":3,"citation_normalized_percentile":{"value":0.432948,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":75,"max":78},"biblio":{"volume":null,"issue":null,"first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9999,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9999,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9999,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9984,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[],"concepts":[{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.7735319},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.61322546},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.61137563},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.60837233},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5751469},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.52575094},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.52300805},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.4698115},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.46608064},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.45998615},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4354851},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4000073},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.3573185},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.34538683},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.19541034},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1755197},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.15513432},{"id":"https://openalex.org/C111368507","wikidata":"https://www.wikidata.org/wiki/Q43518","display_name":"Oceanography","level":1,"score":0.0},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"is_oa":false,"landing_page_url":"https://doi.org/10.1109/icicdt.2012.6232868","pdf_url":null,"source":null,"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/6","score":0.41,"display_name":"Clean water and sanitation"}],"grants":[],"datasets":[],"versions":[],"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W4250300609","https://openalex.org/W2765340795","https://openalex.org/W2572160370","https://openalex.org/W2545707786","https://openalex.org/W2386361943","https://openalex.org/W2159000463","https://openalex.org/W2149895879","https://openalex.org/W2102078456","https://openalex.org/W2031432268","https://openalex.org/W2010357007"],"abstract_inverted_index":{"Threshold":[0],"voltage":[1],"variability":[2,31],"in":[3,13,26,32,47],"Fully":[4],"Depleted":[5],"MOSFETs":[6],"transistors":[7],"is":[8],"usually":[9],"much":[10],"better":[11],"than":[12],"bulk":[14],"devices":[15,34],"because":[16],"of":[17,20,30],"the":[18,28,48,52],"suppression":[19],"channel":[21],"doping.":[22],"This":[23],"paper":[24],"reviews":[25],"details":[27],"specificities":[29],"such":[33],"and":[35],"highlights":[36],"that":[37],"SOI":[38],"boosters":[39],"(such":[40],"as":[41],"back":[42],"bias":[43],"or":[44],"embedded":[45],"strain":[46],"substrate)":[49],"do":[50],"degrade":[51],"matching":[53],"properties.":[54]},"cited_by_api_url":"https://api.openalex.org/works?filter=cites:W2067330305","counts_by_year":[{"year":2017,"cited_by_count":1},{"year":2014,"cited_by_count":2}],"updated_date":"2024-12-11T08:06:38.977357","created_date":"2016-06-24"}