{"id":"https://openalex.org/W2166531048","doi":"https://doi.org/10.1109/icecs.2007.4510938","title":"Behavioural and Electrothermal Modelling of the IGBT for Circuits Simulation","display_name":"Behavioural and Electrothermal Modelling of the IGBT for Circuits Simulation","publication_year":2007,"publication_date":"2007-12-01","ids":{"openalex":"https://openalex.org/W2166531048","doi":"https://doi.org/10.1109/icecs.2007.4510938","mag":"2166531048"},"language":"en","primary_location":{"is_oa":false,"landing_page_url":"https://doi.org/10.1109/icecs.2007.4510938","pdf_url":null,"source":null,"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false},"type":"article","type_crossref":"proceedings-article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5033161940","display_name":"Elmostafa Elwarraki","orcid":"https://orcid.org/0000-0001-8440-275X"},"institutions":[{"id":"https://openalex.org/I119856527","display_name":"Cadi Ayyad University","ror":"https://ror.org/04xf6nm78","country_code":"MA","type":"funder","lineage":["https://openalex.org/I119856527"]}],"countries":["MA"],"is_corresponding":false,"raw_author_name":"Elmostafa Elwarraki","raw_affiliation_strings":["FSTGLSET Research Laboratory, Cadi Ayyad University, Marrakech, Morocco"],"affiliations":[{"raw_affiliation_string":"FSTGLSET Research Laboratory, Cadi Ayyad University, Marrakech, Morocco","institution_ids":["https://openalex.org/I119856527"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5113697460","display_name":"Abderrafia Sabir","orcid":null},"institutions":[{"id":"https://openalex.org/I99297268","display_name":"University of Hassan II Casablanca","ror":"https://ror.org/001q4kn48","country_code":"MA","type":"funder","lineage":["https://openalex.org/I99297268"]}],"countries":["MA"],"is_corresponding":false,"raw_author_name":"Abderrafia Sabir","raw_affiliation_strings":["ESTC, Hassan II University, Casablanca, Morocco"],"affiliations":[{"raw_affiliation_string":"ESTC, Hassan II University, Casablanca, Morocco","institution_ids":["https://openalex.org/I99297268"]}]}],"institution_assertions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.39,"has_fulltext":true,"fulltext_origin":"ngrams","cited_by_count":9,"citation_normalized_percentile":{"value":0.75609,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":82,"max":83},"biblio":{"volume":null,"issue":null,"first_page":"90","last_page":"93"},"is_retracted":false,"is_paratext":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9994,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9994,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11444","display_name":"Electromagnetic Compatibility and Noise Suppression","score":0.99,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12898","display_name":"Induction Heating and Inverter Technology","score":0.9878,"subfield":{"id":"https://openalex.org/subfields/2210","display_name":"Mechanical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/insulated-gate-bipolar-transistor","display_name":"Insulated-gate bipolar transistor","score":0.8739648},{"id":"https://openalex.org/keywords/semiconductor-device-modeling","display_name":"Semiconductor device modeling","score":0.46678746},{"id":"https://openalex.org/keywords/power-electronics","display_name":"Power Electronics","score":0.44220152},{"id":"https://openalex.org/keywords/behavioral-modeling","display_name":"Behavioral Modeling","score":0.41378897}],"concepts":[{"id":"https://openalex.org/C28285623","wikidata":"https://www.wikidata.org/wiki/Q176110","display_name":"Insulated-gate bipolar transistor","level":3,"score":0.8739648},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.6618366},{"id":"https://openalex.org/C79635011","wikidata":"https://www.wikidata.org/wiki/Q175805","display_name":"Semiconductor device","level":3,"score":0.6590971},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.6062096},{"id":"https://openalex.org/C138331895","wikidata":"https://www.wikidata.org/wiki/Q11650","display_name":"Electronics","level":2,"score":0.5315266},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.4974287},{"id":"https://openalex.org/C4775677","wikidata":"https://www.wikidata.org/wiki/Q7449393","display_name":"Semiconductor device modeling","level":3,"score":0.46678746},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.45700988},{"id":"https://openalex.org/C129014197","wikidata":"https://www.wikidata.org/wiki/Q906544","display_name":"Power semiconductor device","level":3,"score":0.44349146},{"id":"https://openalex.org/C178911571","wikidata":"https://www.wikidata.org/wiki/Q593143","display_name":"Power electronics","level":3,"score":0.44220152},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.44119424},{"id":"https://openalex.org/C78639753","wikidata":"https://www.wikidata.org/wiki/Q3318160","display_name":"Behavioral modeling","level":2,"score":0.41378897},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.23565131},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.13900885},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.08715516},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.082723916},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.08187109},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"is_oa":false,"landing_page_url":"https://doi.org/10.1109/icecs.2007.4510938","pdf_url":null,"source":null,"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false}],"best_oa_location":null,"sustainable_development_goals":[],"grants":[],"datasets":[],"versions":[],"referenced_works_count":6,"referenced_works":["https://openalex.org/W2051002910","https://openalex.org/W2145980096","https://openalex.org/W2151321886","https://openalex.org/W2178902450","https://openalex.org/W4285719527","https://openalex.org/W4297783599"],"related_works":["https://openalex.org/W4248766865","https://openalex.org/W2547004337","https://openalex.org/W2345599747","https://openalex.org/W2178533142","https://openalex.org/W2164236338","https://openalex.org/W2158589382","https://openalex.org/W1972534604","https://openalex.org/W1969620786","https://openalex.org/W1834239480","https://openalex.org/W1571872413"],"abstract_inverted_index":{"The":[0],"semiconductor":[1],"devices":[2,18,63,97],"modelling":[3,116],"became":[4],"today":[5],"an":[6],"indispensable":[7],"tool":[8],"in":[9,52,64,103,114],"the":[10,32,36,43,59,80,89,104,115,118],"electronic":[11,14],"and":[12,26,34,55,77],"power":[13],"fields.":[15],"Recently":[16],"several":[17],"models":[19,73,91,98],"are":[20,28,50],"presented,":[21],"resulting":[22],"from":[23,74],"semiconductors":[24],"physics":[25],"which":[27],"intended":[29],"only":[30],"for":[31],"design":[33],"to":[35,71,87,93,99],"improvement":[37],"of":[38,61,117],"device":[39],"performances":[40],"themselves.":[41],"On":[42],"other":[44],"hand,":[45],"as":[46],"users":[47],"one,":[48],"we":[49],"interested":[51,113],"their":[53],"electrical":[54],"thermal":[56],"behaviour.":[57,82],"Indeed,":[58],"insertion":[60],"these":[62],"a":[65],"circuit":[66],"environment":[67],"necessitates":[68],"enough":[69],"often":[70],"find":[72],"passive":[75],"elements":[76],"that":[78],"reproduce":[79],"same":[81],"It":[83],"appears":[84],"therefore":[85],"necessary":[86],"adapt":[88],"existing":[90],"or":[92],"develop":[94],"new":[95],"behavioural":[96],"solve":[100],"evoked":[101],"problems":[102],"circuits":[105],"design.":[106],"In":[107],"this":[108],"way,":[109],"our":[110],"paper":[111],"is":[112],"IGBT":[119],"device.":[120]},"abstract_inverted_index_v3":null,"cited_by_api_url":"https://api.openalex.org/works?filter=cites:W2166531048","counts_by_year":[{"year":2023,"cited_by_count":3},{"year":2021,"cited_by_count":2},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2015,"cited_by_count":1}],"updated_date":"2025-02-15T23:18:10.962602","created_date":"2016-06-24"}