乐胖代购免代理版

{"id":"https://openalex.org/W2062804343","doi":"https://doi.org/10.1109/essderc.2014.6948842","title":"Characterization of high-voltage charge-trapping effects in GaN-based power HEMTs","display_name":"Characterization of high-voltage charge-trapping effects in GaN-based power HEMTs","publication_year":2014,"publication_date":"2014-09-01","ids":{"openalex":"https://openalex.org/W2062804343","doi":"https://doi.org/10.1109/essderc.2014.6948842","mag":"2062804343"},"language":"en","primary_location":{"is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2014.6948842","pdf_url":null,"source":null,"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false},"type":"article","type_crossref":"proceedings-article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5044270131","display_name":"Davide Bisi","orcid":"https://orcid.org/0000-0002-1660-5261"},"institutions":[{"id":"https://openalex.org/I138689650","display_name":"University of Padua","ror":"https://ror.org/00240q980","country_code":"IT","type":"funder","lineage":["https://openalex.org/I138689650"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"D. Bisi","raw_affiliation_strings":["Department of Information Engineering , University of Padova , via Gradenigo 6/b 35131, Padova , Italy"],"affiliations":[{"raw_affiliation_string":"Department of Information Engineering , University of Padova , via Gradenigo 6/b 35131, Padova , Italy","institution_ids":["https://openalex.org/I138689650"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5054459896","display_name":"Antonio Stocco","orcid":"https://orcid.org/0000-0002-5524-4323"},"institutions":[{"id":"https://openalex.org/I138689650","display_name":"University of Padua","ror":"https://ror.org/00240q980","country_code":"IT","type":"funder","lineage":["https://openalex.org/I138689650"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"A. Stocco","raw_affiliation_strings":["Department of Information Engineering , University of Padova , via Gradenigo 6/b 35131, Padova , Italy"],"affiliations":[{"raw_affiliation_string":"Department of Information Engineering , University of Padova , via Gradenigo 6/b 35131, Padova , Italy","institution_ids":["https://openalex.org/I138689650"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5059611177","display_name":"Matteo Meneghini","orcid":"https://orcid.org/0000-0003-2421-505X"},"institutions":[{"id":"https://openalex.org/I138689650","display_name":"University of Padua","ror":"https://ror.org/00240q980","country_code":"IT","type":"funder","lineage":["https://openalex.org/I138689650"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"M. Meneghini","raw_affiliation_strings":["Department of Information Engineering , University of Padova , via Gradenigo 6/b 35131, Padova , Italy"],"affiliations":[{"raw_affiliation_string":"Department of Information Engineering , University of Padova , via Gradenigo 6/b 35131, Padova , Italy","institution_ids":["https://openalex.org/I138689650"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5044222808","display_name":"F. Rampazzo","orcid":null},"institutions":[{"id":"https://openalex.org/I138689650","display_name":"University of Padua","ror":"https://ror.org/00240q980","country_code":"IT","type":"funder","lineage":["https://openalex.org/I138689650"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"F. Rampazzo","raw_affiliation_strings":["Department of Information Engineering , University of Padova , via Gradenigo 6/b 35131, Padova , Italy"],"affiliations":[{"raw_affiliation_string":"Department of Information Engineering , University of Padova , via Gradenigo 6/b 35131, Padova , Italy","institution_ids":["https://openalex.org/I138689650"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5050762849","display_name":"Andrea Cester","orcid":"https://orcid.org/0000-0001-6583-1735"},"institutions":[{"id":"https://openalex.org/I138689650","display_name":"University of Padua","ror":"https://ror.org/00240q980","country_code":"IT","type":"funder","lineage":["https://openalex.org/I138689650"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"A. Cester","raw_affiliation_strings":["Department of Information Engineering , University of Padova , via Gradenigo 6/b 35131, Padova , Italy"],"affiliations":[{"raw_affiliation_string":"Department of Information Engineering , University of Padova , via Gradenigo 6/b 35131, Padova , Italy","institution_ids":["https://openalex.org/I138689650"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101587480","display_name":"Gaudenzio Meneghesso","orcid":"https://orcid.org/0000-0002-6715-4827"},"institutions":[{"id":"https://openalex.org/I138689650","display_name":"University of Padua","ror":"https://ror.org/00240q980","country_code":"IT","type":"funder","lineage":["https://openalex.org/I138689650"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"G. Meneghesso","raw_affiliation_strings":["Department of Information Engineering , University of Padova , via Gradenigo 6/b 35131, Padova , Italy"],"affiliations":[{"raw_affiliation_string":"Department of Information Engineering , University of Padova , via Gradenigo 6/b 35131, Padova , Italy","institution_ids":["https://openalex.org/I138689650"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5002653396","display_name":"Enrico Zanoni","orcid":"https://orcid.org/0000-0001-7349-9656"},"institutions":[{"id":"https://openalex.org/I138689650","display_name":"University of Padua","ror":"https://ror.org/00240q980","country_code":"IT","type":"funder","lineage":["https://openalex.org/I138689650"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"E. Zanoni","raw_affiliation_strings":["Department of Information Engineering , University of Padova , via Gradenigo 6/b 35131, Padova , Italy"],"affiliations":[{"raw_affiliation_string":"Department of Information Engineering , University of Padova , via Gradenigo 6/b 35131, Padova , Italy","institution_ids":["https://openalex.org/I138689650"]}]}],"institution_assertions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":1.542,"has_fulltext":true,"fulltext_origin":"ngrams","cited_by_count":4,"citation_normalized_percentile":{"value":0.726316,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":79,"max":80},"biblio":{"volume":null,"issue":null,"first_page":"389","last_page":"392"},"is_retracted":false,"is_paratext":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9995,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.46184582}],"concepts":[{"id":"https://openalex.org/C2777924906","wikidata":"https://www.wikidata.org/wiki/Q34168","display_name":"Trapping","level":2,"score":0.7253964},{"id":"https://openalex.org/C205200001","wikidata":"https://www.wikidata.org/wiki/Q176066","display_name":"Schottky diode","level":3,"score":0.6000421},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5054288},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.48904},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.46902648},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.46184582},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.35179958},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3240898},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.30211636},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.17068693},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.11531389},{"id":"https://openalex.org/C86803240","wikidata":"https://www.wikidata.org/wiki/Q420","display_name":"Biology","level":0,"score":0.10978329},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.103517115},{"id":"https://openalex.org/C18903297","wikidata":"https://www.wikidata.org/wiki/Q7150","display_name":"Ecology","level":1,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2014.6948842","pdf_url":null,"source":null,"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.45,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"grants":[],"datasets":[],"versions":[],"referenced_works_count":17,"referenced_works":["https://openalex.org/W1628168668","https://openalex.org/W1977450210","https://openalex.org/W1978868203","https://openalex.org/W1980781387","https://openalex.org/W1991653226","https://openalex.org/W1993047195","https://openalex.org/W2009841345","https://openalex.org/W2029699094","https://openalex.org/W2050938047","https://openalex.org/W2072371118","https://openalex.org/W2080869683","https://openalex.org/W2082022477","https://openalex.org/W2090609957","https://openalex.org/W2092387864","https://openalex.org/W2103943288","https://openalex.org/W2124799437","https://openalex.org/W2137003270"],"related_works":["https://openalex.org/W769734323","https://openalex.org/W4296916267","https://openalex.org/W4252213749","https://openalex.org/W2394289659","https://openalex.org/W2354192024","https://openalex.org/W2051069894","https://openalex.org/W2018070723","https://openalex.org/W2007742350","https://openalex.org/W2007559369","https://openalex.org/W2007529921"],"abstract_inverted_index":{"We":[0],"investigate":[1],"the":[2,5,75,85,90],"effects":[3],"and":[4,18,53,71],"causes":[6],"of":[7,77],"highvoltage":[8],"charge-trapping":[9],"phenomena":[10],"in":[11],"AlGaN/GaN":[12],"Schottky-HEMTs":[13],"grown":[14],"on":[15],"SiC":[16],"substrate,":[17],"we":[19],"present":[20],"an":[21],"high-voltage":[22],"pulsed":[23],"system,":[24],"implemented":[25],"by":[26,67,81],"a":[27],"cost-effective":[28],"fully-customable":[29],"modular":[30],"solution.":[31],"The":[32,56],"characterization":[33],"methodology":[34],"includes":[35],"double-pulsed":[36],"I":[37],"D":[40,44],"-V":[41],"measurements,":[45],"time-resolved":[46],"R":[47,60],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">ON":[50,63],"recovery":[51],"transients,":[52],"leakage-currents":[54],"analysis.":[55],"observed":[57],"parasitic":[58,78],"dynamic":[59],"-increase":[64],"is":[65],"triggered":[66],"high":[68],"drain-voltage":[69],"(>50V),":[70],"likely":[72],"originates":[73],"from":[74],"trapping":[76],"electrons":[79],"supplied":[80],"leakage":[82],"currents":[83],"at":[84],"crystallographic":[86],"defect-states":[87],"located":[88],"within":[89],"epitaxial":[91],"structure.":[92]},"abstract_inverted_index_v3":null,"cited_by_api_url":"https://api.openalex.org/works?filter=cites:W2062804343","counts_by_year":[{"year":2023,"cited_by_count":1},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":1}],"updated_date":"2025-04-21T18:14:22.858784","created_date":"2016-06-24"}