乐胖代购免代理版

{"id":"https://openalex.org/W2616246938","doi":"https://doi.org/10.1109/dtis.2017.7930155","title":"Fabrication and simulation of electrically reconfigurable dual metal-gate planar field-effect transistors for dopant-free CMOS","display_name":"Fabrication and simulation of electrically reconfigurable dual metal-gate planar field-effect transistors for dopant-free CMOS","publication_year":2017,"publication_date":"2017-04-01","ids":{"openalex":"https://openalex.org/W2616246938","doi":"https://doi.org/10.1109/dtis.2017.7930155","mag":"2616246938"},"language":"en","primary_location":{"is_oa":false,"landing_page_url":"https://doi.org/10.1109/dtis.2017.7930155","pdf_url":null,"source":null,"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false},"type":"article","type_crossref":"proceedings-article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5029555527","display_name":"Tillmann Krauss","orcid":"https://orcid.org/0000-0002-3907-4942"},"institutions":[{"id":"https://openalex.org/I31512782","display_name":"Technical University of Darmstadt","ror":"https://ror.org/05n911h24","country_code":"DE","type":"funder","lineage":["https://openalex.org/I31512782"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Tillmann Krauss","raw_affiliation_strings":["Institute for Semiconductor Technology and Nanoelectronics technische, Universit\u00e4t Darmstadt, Darmstadt, Germany"],"affiliations":[{"raw_affiliation_string":"Institute for Semiconductor Technology and Nanoelectronics technische, Universit\u00e4t Darmstadt, Darmstadt, Germany","institution_ids":["https://openalex.org/I31512782"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5086570956","display_name":"Frank Wessely","orcid":null},"institutions":[{"id":"https://openalex.org/I31512782","display_name":"Technical University of Darmstadt","ror":"https://ror.org/05n911h24","country_code":"DE","type":"funder","lineage":["https://openalex.org/I31512782"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Frank Wessely","raw_affiliation_strings":["Institute for Semiconductor Technology and Nanoelectronics technische, Universit\u00e4t Darmstadt, Darmstadt, Germany"],"affiliations":[{"raw_affiliation_string":"Institute for Semiconductor Technology and Nanoelectronics technische, Universit\u00e4t Darmstadt, Darmstadt, Germany","institution_ids":["https://openalex.org/I31512782"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5086461489","display_name":"Udo Schwalke","orcid":null},"institutions":[{"id":"https://openalex.org/I31512782","display_name":"Technical University of Darmstadt","ror":"https://ror.org/05n911h24","country_code":"DE","type":"funder","lineage":["https://openalex.org/I31512782"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Udo Schwalke","raw_affiliation_strings":["Institute for Semiconductor Technology and Nanoelectronics technische, Universit\u00e4t Darmstadt, Darmstadt, Germany"],"affiliations":[{"raw_affiliation_string":"Institute for Semiconductor Technology and Nanoelectronics technische, Universit\u00e4t Darmstadt, Darmstadt, Germany","institution_ids":["https://openalex.org/I31512782"]}]}],"institution_assertions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.608,"has_fulltext":true,"fulltext_origin":"ngrams","cited_by_count":4,"citation_normalized_percentile":{"value":0.557895,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":77,"max":79},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"6"},"is_retracted":false,"is_paratext":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9999,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11272","display_name":"Nanowire Synthesis and Applications","score":0.9995,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[],"concepts":[{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.792216},{"id":"https://openalex.org/C136525101","wikidata":"https://www.wikidata.org/wiki/Q5428139","display_name":"Fabrication","level":3,"score":0.75468236},{"id":"https://openalex.org/C134786449","wikidata":"https://www.wikidata.org/wiki/Q3391255","display_name":"Planar","level":2,"score":0.6904137},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.63707596},{"id":"https://openalex.org/C191952053","wikidata":"https://www.wikidata.org/wiki/Q15119237","display_name":"Dopant","level":3,"score":0.6304641},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.51092595},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4967752},{"id":"https://openalex.org/C2780980858","wikidata":"https://www.wikidata.org/wiki/Q110022","display_name":"Dual (grammatical number)","level":2,"score":0.48301208},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.46341747},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.41110188},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.39662424},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.2694799},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.25111002},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.20075208},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.06969607},{"id":"https://openalex.org/C121684516","wikidata":"https://www.wikidata.org/wiki/Q7600677","display_name":"Computer graphics (images)","level":1,"score":0.0},{"id":"https://openalex.org/C71924100","wikidata":"https://www.wikidata.org/wiki/Q11190","display_name":"Medicine","level":0,"score":0.0},{"id":"https://openalex.org/C142362112","wikidata":"https://www.wikidata.org/wiki/Q735","display_name":"Art","level":0,"score":0.0},{"id":"https://openalex.org/C204787440","wikidata":"https://www.wikidata.org/wiki/Q188504","display_name":"Alternative medicine","level":2,"score":0.0},{"id":"https://openalex.org/C124952713","wikidata":"https://www.wikidata.org/wiki/Q8242","display_name":"Literature","level":1,"score":0.0},{"id":"https://openalex.org/C142724271","wikidata":"https://www.wikidata.org/wiki/Q7208","display_name":"Pathology","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"is_oa":false,"landing_page_url":"https://doi.org/10.1109/dtis.2017.7930155","pdf_url":null,"source":null,"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.49}],"grants":[],"datasets":[],"versions":[],"referenced_works_count":15,"referenced_works":["https://openalex.org/W1959796964","https://openalex.org/W1970841857","https://openalex.org/W1977426672","https://openalex.org/W1982666794","https://openalex.org/W1991485703","https://openalex.org/W2013968170","https://openalex.org/W2024922058","https://openalex.org/W2033627499","https://openalex.org/W2034370025","https://openalex.org/W2109471502","https://openalex.org/W2157680042","https://openalex.org/W2319358185","https://openalex.org/W2322754293","https://openalex.org/W2519070888","https://openalex.org/W2963849560"],"related_works":["https://openalex.org/W4253838303","https://openalex.org/W2954104981","https://openalex.org/W2806746576","https://openalex.org/W2165737690","https://openalex.org/W2153961634","https://openalex.org/W2124549714","https://openalex.org/W2118243209","https://openalex.org/W2013539532","https://openalex.org/W1990427537","https://openalex.org/W1971420792"],"abstract_inverted_index":{"In":[0],"this":[1,33],"paper,":[2],"we":[3],"illustrate":[4],"by":[5,12,59],"simulation":[6],"and":[7,69],"extend":[8],"our":[9],"previous":[10],"work":[11,25],"demonstration":[13],"of":[14,17,74],"fabricated":[15],"devices":[16],"electrostatically":[18],"doped,":[19],"reconfigurable":[20],"planar":[21],"field-effect-transistors":[22],"with":[23],"dual":[24],"function":[26],"metal":[27],"gates.":[28],"The":[29,46],"technological":[30],"cornerstones":[31],"for":[32],"dual-gated":[34],"general":[35],"purpose":[36],"FET":[37],"contain":[38],"Schottky":[39],"S/D":[40],"junctions":[41],"on":[42],"a":[43,61],"silicon-on-insulator":[44],"substrate.":[45],"transistor":[47],"type,":[48],"i.e.":[49],"n-type":[50],"or":[51],"p-type":[52],"FET,":[53],"is":[54],"electrically":[55],"selectable":[56],"in":[57,71],"operation":[58],"applying":[60],"control-gate":[62],"voltage":[63],"which":[64],"significantly":[65],"increases":[66],"the":[67,72],"versatility":[68],"flexibility":[70],"design":[73],"digital":[75],"integrated":[76],"circuits.":[77]},"abstract_inverted_index_v3":null,"cited_by_api_url":"https://api.openalex.org/works?filter=cites:W2616246938","counts_by_year":[{"year":2022,"cited_by_count":2},{"year":2018,"cited_by_count":1},{"year":2017,"cited_by_count":1}],"updated_date":"2025-04-19T13:28:41.384905","created_date":"2017-05-26"}