{"id":"https://openalex.org/W3154248308","doi":"https://doi.org/10.1109/bcicts48439.2020.9392930","title":"Modeling the temperature dependence of sheet and contact resistances in SiGe:C HBTs from 4.3 to 423 K","display_name":"Modeling the temperature dependence of sheet and contact resistances in SiGe:C HBTs from 4.3 to 423 K","publication_year":2020,"publication_date":"2020-11-16","ids":{"openalex":"https://openalex.org/W3154248308","doi":"https://doi.org/10.1109/bcicts48439.2020.9392930","mag":"3154248308"},"language":"en","primary_location":{"is_oa":false,"landing_page_url":"https://doi.org/10.1109/bcicts48439.2020.9392930","pdf_url":null,"source":null,"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false},"type":"article","type_crossref":"proceedings-article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5052598592","display_name":"Xiaodi Jin","orcid":"https://orcid.org/0000-0002-7800-9000"},"institutions":[{"id":"https://openalex.org/I78650965","display_name":"TU Dresden","ror":"https://ror.org/042aqky30","country_code":"DE","type":"education","lineage":["https://openalex.org/I78650965"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Xiaodi Jin","raw_affiliation_strings":["Chair for Electron Devices and Integrated Circuits, TU Dresden, Dresden, Germany"],"affiliations":[{"raw_affiliation_string":"Chair for Electron Devices and Integrated Circuits, TU Dresden, Dresden, Germany","institution_ids":["https://openalex.org/I78650965"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5088861441","display_name":"Christoph Weimer","orcid":"https://orcid.org/0000-0002-6005-0937"},"institutions":[{"id":"https://openalex.org/I78650965","display_name":"TU Dresden","ror":"https://ror.org/042aqky30","country_code":"DE","type":"education","lineage":["https://openalex.org/I78650965"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Christoph Weimer","raw_affiliation_strings":["Chair for Electron Devices and Integrated Circuits, TU Dresden, Dresden, Germany"],"affiliations":[{"raw_affiliation_string":"Chair for Electron Devices and Integrated Circuits, TU Dresden, Dresden, Germany","institution_ids":["https://openalex.org/I78650965"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100736912","display_name":"Yaxin Zhang","orcid":"https://orcid.org/0000-0001-9418-4522"},"institutions":[{"id":"https://openalex.org/I78650965","display_name":"TU Dresden","ror":"https://ror.org/042aqky30","country_code":"DE","type":"education","lineage":["https://openalex.org/I78650965"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Yaxin Zhang","raw_affiliation_strings":["Chair for Electron Devices and Integrated Circuits, TU Dresden, Dresden, Germany"],"affiliations":[{"raw_affiliation_string":"Chair for Electron Devices and Integrated Circuits, TU Dresden, Dresden, Germany","institution_ids":["https://openalex.org/I78650965"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5035970449","display_name":"M. Schr\u00f6ter","orcid":"https://orcid.org/0000-0002-5432-716X"},"institutions":[{"id":"https://openalex.org/I78650965","display_name":"TU Dresden","ror":"https://ror.org/042aqky30","country_code":"DE","type":"education","lineage":["https://openalex.org/I78650965"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Michael Schroter","raw_affiliation_strings":["Chair for Electron Devices and Integrated Circuits, TU Dresden, Dresden, Germany"],"affiliations":[{"raw_affiliation_string":"Chair for Electron Devices and Integrated Circuits, TU Dresden, Dresden, Germany","institution_ids":["https://openalex.org/I78650965"]}]}],"institution_assertions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.159,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.337643,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":69,"max":73},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"primary_topic":{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9996,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9996,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.9994,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9989,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/atmospheric-temperature-range","display_name":"Atmospheric temperature range","score":0.6588941},{"id":"https://openalex.org/keywords/contact-resistance","display_name":"Contact resistance","score":0.58199716},{"id":"https://openalex.org/keywords/equivalent-series-resistance","display_name":"Equivalent series resistance","score":0.465994}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.67978823},{"id":"https://openalex.org/C39353612","wikidata":"https://www.wikidata.org/wiki/Q5283759","display_name":"Atmospheric temperature range","level":2,"score":0.6588941},{"id":"https://openalex.org/C66825105","wikidata":"https://www.wikidata.org/wiki/Q354718","display_name":"Sheet resistance","level":3,"score":0.5893951},{"id":"https://openalex.org/C123671423","wikidata":"https://www.wikidata.org/wiki/Q332329","display_name":"Contact resistance","level":3,"score":0.58199716},{"id":"https://openalex.org/C72293138","wikidata":"https://www.wikidata.org/wiki/Q909741","display_name":"Temperature measurement","level":2,"score":0.48251176},{"id":"https://openalex.org/C204323151","wikidata":"https://www.wikidata.org/wiki/Q905424","display_name":"Range (aeronautics)","level":2,"score":0.46816134},{"id":"https://openalex.org/C14485415","wikidata":"https://www.wikidata.org/wiki/Q5384730","display_name":"Equivalent series resistance","level":3,"score":0.465994},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.41140205},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.28188875},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.24067786},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.235946},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.21871257},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.13303417},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.07069701},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"is_oa":false,"landing_page_url":"https://doi.org/10.1109/bcicts48439.2020.9392930","pdf_url":null,"source":null,"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false}],"best_oa_location":null,"sustainable_development_goals":[],"grants":[],"datasets":[],"versions":[],"referenced_works_count":16,"referenced_works":["https://openalex.org/W1989218887","https://openalex.org/W2015601653","https://openalex.org/W2106391466","https://openalex.org/W2121013032","https://openalex.org/W2153502403","https://openalex.org/W2345283220","https://openalex.org/W2431159820","https://openalex.org/W2490765418","https://openalex.org/W2547020345","https://openalex.org/W2558770604","https://openalex.org/W2606803236","https://openalex.org/W2787949239","https://openalex.org/W2885771901","https://openalex.org/W3003437941","https://openalex.org/W4230198689","https://openalex.org/W4236154283"],"related_works":["https://openalex.org/W4318601828","https://openalex.org/W2889599805","https://openalex.org/W2507745370","https://openalex.org/W2131495691","https://openalex.org/W2018358512","https://openalex.org/W2005075220","https://openalex.org/W1995064285","https://openalex.org/W1973428710","https://openalex.org/W1967458228","https://openalex.org/W1256500646"],"abstract_inverted_index":{"The":[0,44],"temperature":[1,31,54,66],"dependence":[2,32],"of":[3,33],"series":[4],"resistance":[5],"components":[6],"in":[7],"SiGe:C":[8],"HBTs":[9],"was":[10],"measured":[11,42,65],"from":[12,87],"4.3":[13,88],"to":[14,89],"423":[15,90],"K.":[16,91],"A":[17],"physics-based":[18,71],"description":[19],"as":[20,22],"well":[21],"various":[23,84],"widely":[24],"used":[25],"analytical":[26],"formulations":[27],"for":[28,81],"modeling":[29,82],"the":[30,41,63,78,83],"sheet":[34,85],"and":[35,68],"contact":[36],"resistances":[37,86],"were":[38],"compared":[39],"with":[40],"data.":[43],"standard":[45],"two-parameter":[46],"power":[47],"law":[48],"model":[49,72],"only":[50],"covers":[51],"a":[52,69],"limited":[53],"range,":[55,67],"while":[56],"three-parameter":[57],"models":[58],"exhibit":[59],"good":[60],"accuracy":[61],"over":[62],"entire":[64],"four-parameter":[70],"shows":[73],"excellent":[74],"accuracy.":[75],"This":[76],"is":[77],"first":[79],"demonstration":[80]},"cited_by_api_url":"https://api.openalex.org/works?filter=cites:W3154248308","counts_by_year":[{"year":2021,"cited_by_count":2}],"updated_date":"2025-01-08T04:24:17.540302","created_date":"2021-04-26"}