乐胖代购免代理版

{"id":"https://openalex.org/W2045365640","doi":"https://doi.org/10.1109/4.255","title":"Voltage limiters for DRAMs with substrate-plate-electrode memory cells","display_name":"Voltage limiters for DRAMs with substrate-plate-electrode memory cells","publication_year":1988,"publication_date":"1988-02-01","ids":{"openalex":"https://openalex.org/W2045365640","doi":"https://doi.org/10.1109/4.255","mag":"2045365640"},"language":"en","primary_location":{"is_oa":false,"landing_page_url":"https://doi.org/10.1109/4.255","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false},"type":"article","type_crossref":"journal-article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5014318119","display_name":"T. Takeshima","orcid":null},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"T. Takeshima","raw_affiliation_strings":["NEC Corporation,Kanagawa,Japan"],"affiliations":[{"raw_affiliation_string":"NEC Corporation,Kanagawa,Japan","institution_ids":["https://openalex.org/I118347220"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112614030","display_name":"M. Takada","orcid":null},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"M. Takada","raw_affiliation_strings":["NEC Corporation,Kanagawa,Japan"],"affiliations":[{"raw_affiliation_string":"NEC Corporation,Kanagawa,Japan","institution_ids":["https://openalex.org/I118347220"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5022595094","display_name":"Toshiyuki Shimizu","orcid":"https://orcid.org/0000-0003-2272-6964"},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"T. Shimizu","raw_affiliation_strings":["NEC Corporation,Kanagawa,Japan"],"affiliations":[{"raw_affiliation_string":"NEC Corporation,Kanagawa,Japan","institution_ids":["https://openalex.org/I118347220"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5026323457","display_name":"Takuya Katoh","orcid":null},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"T. Katoh","raw_affiliation_strings":["NEC Corporation,Kanagawa,Japan"],"affiliations":[{"raw_affiliation_string":"NEC Corporation,Kanagawa,Japan","institution_ids":["https://openalex.org/I118347220"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5110462867","display_name":"M. Sakamoto","orcid":null},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"M. Sakamoto","raw_affiliation_strings":["NEC Corporation,Kanagawa,Japan"],"affiliations":[{"raw_affiliation_string":"NEC Corporation,Kanagawa,Japan","institution_ids":["https://openalex.org/I118347220"]}]}],"institution_assertions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":true,"fulltext_origin":"ngrams","cited_by_count":2,"citation_normalized_percentile":{"value":0.495414,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":61,"max":66},"biblio":{"volume":"23","issue":"1","first_page":"48","last_page":"52"},"is_retracted":false,"is_paratext":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9999,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9998,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/dram","display_name":"Dram","score":0.8825078},{"id":"https://openalex.org/keywords/limiter","display_name":"Limiter","score":0.867886},{"id":"https://openalex.org/keywords/margin","display_name":"Margin (machine learning)","score":0.5844778}],"concepts":[{"id":"https://openalex.org/C7366592","wikidata":"https://www.wikidata.org/wiki/Q1255620","display_name":"Dram","level":2,"score":0.8825078},{"id":"https://openalex.org/C45011657","wikidata":"https://www.wikidata.org/wiki/Q1613840","display_name":"Limiter","level":2,"score":0.867886},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.70499843},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.62126136},{"id":"https://openalex.org/C774472","wikidata":"https://www.wikidata.org/wiki/Q6760393","display_name":"Margin (machine learning)","level":2,"score":0.5844778},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5679649},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.55089027},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.524814},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.44329563},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3540343},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.23500139},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.22326228},{"id":"https://openalex.org/C111368507","wikidata":"https://www.wikidata.org/wiki/Q43518","display_name":"Oceanography","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C119857082","wikidata":"https://www.wikidata.org/wiki/Q2539","display_name":"Machine learning","level":1,"score":0.0},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"is_oa":false,"landing_page_url":"https://doi.org/10.1109/4.255","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.75,"id":"https://metadata.un.org/sdg/7"}],"grants":[],"datasets":[],"versions":[],"referenced_works_count":7,"referenced_works":["https://openalex.org/W1991220934","https://openalex.org/W2025260604","https://openalex.org/W2034063901","https://openalex.org/W2111975328","https://openalex.org/W2172300836","https://openalex.org/W2508027136","https://openalex.org/W4249235939"],"related_works":["https://openalex.org/W65141678","https://openalex.org/W4288570033","https://openalex.org/W4244089572","https://openalex.org/W3120961607","https://openalex.org/W2021628707","https://openalex.org/W1970357992","https://openalex.org/W1594063253","https://openalex.org/W1576691340","https://openalex.org/W1498528132","https://openalex.org/W123929382"],"abstract_inverted_index":{"To":[0],"prevent":[1],"substrate-plate-electrode":[2],"(SPE)":[3],"cell":[4],"weakness":[5],"due":[6],"to":[7,15,33,58],"substrate-bias":[8,91],"voltage":[9,11,26,38,62,73,76,92,103],"bounce,":[10],"limiters":[12,39,77],"were":[13],"applied":[14],"both":[16],"the":[17,20,70,100,111],"substrate":[18],"and":[19,105],"sense-circuit":[21,101],"supply":[22,25,102],"source.":[23],"A":[24],"V/sub":[27,115],"CC/":[28,116],"bump":[29],"test":[30],"was":[31,49,67],"introduced":[32],"evaluate":[34],"their":[35],"effectiveness.":[36],"The":[37,90],"have":[40],"been":[41],"implemented":[42],"on":[43],"an":[44],"experimental":[45],"4-Mb":[46],"DRAM.":[47],"It":[48],"found":[50],"that":[51],"a":[52,107],"wider":[53],"operational":[54,84,112],"margin,":[55],"as":[56],"compared":[57],"conventional":[59],"DRAMs":[60,86],"(without":[61],"limiters)":[63],"having":[64],"SPE":[65,88],"cells,":[66],"achievable":[68],"through":[69],"use":[71],"of":[72,109,114],"limiters.":[74],"These":[75],"may":[78],"be":[79],"considered":[80],"suitable":[81],"for":[82],"wide":[83],"margin":[85,113],"with":[87],"cells.":[89],"limiter,":[93],"in":[94],"particular,":[95],"is":[96],"more":[97],"effective":[98],"than":[99],"limiter":[104],"offers":[106],"means":[108],"improving":[110],"bump.<":[117],">":[120]},"cited_by_api_url":"https://api.openalex.org/works?filter=cites:W2045365640","counts_by_year":[{"year":2015,"cited_by_count":1}],"updated_date":"2024-12-11T20:00:15.851152","created_date":"2016-06-24"}