乐胖代购免代理版

{"id":"https://openalex.org/W1992131905","doi":"https://doi.org/10.1016/j.microrel.2010.08.014","title":"AlGaN/GaN HEMT device reliability and degradation evolution: Importance of diffusion processes","display_name":"AlGaN/GaN HEMT device reliability and degradation evolution: Importance of diffusion processes","publication_year":2010,"publication_date":"2010-09-25","ids":{"openalex":"https://openalex.org/W1992131905","doi":"https://doi.org/10.1016/j.microrel.2010.08.014","mag":"1992131905"},"language":"en","primary_location":{"is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.microrel.2010.08.014","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_indexed_in_scopus":true,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false},"type":"article","type_crossref":"journal-article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5081176603","display_name":"Martin Kuball","orcid":"https://orcid.org/0000-0003-3070-1070"},"institutions":[{"id":"https://openalex.org/I36234482","display_name":"University of Bristol","ror":"https://ror.org/0524sp257","country_code":"GB","type":"education","lineage":["https://openalex.org/I36234482"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"Martin Kuball","raw_affiliation_strings":["Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, United Kingdom"],"affiliations":[{"raw_affiliation_string":"Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, United Kingdom","institution_ids":["https://openalex.org/I36234482"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5049911473","display_name":"M. \u0164apajna","orcid":"https://orcid.org/0000-0003-1099-2050"},"institutions":[{"id":"https://openalex.org/I36234482","display_name":"University of Bristol","ror":"https://ror.org/0524sp257","country_code":"GB","type":"education","lineage":["https://openalex.org/I36234482"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"Milan \u0164apajna","raw_affiliation_strings":["Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, United Kingdom"],"affiliations":[{"raw_affiliation_string":"Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, United Kingdom","institution_ids":["https://openalex.org/I36234482"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5052111808","display_name":"R. Simms","orcid":null},"institutions":[{"id":"https://openalex.org/I36234482","display_name":"University of Bristol","ror":"https://ror.org/0524sp257","country_code":"GB","type":"education","lineage":["https://openalex.org/I36234482"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"Richard J.T. Simms","raw_affiliation_strings":["Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, United Kingdom"],"affiliations":[{"raw_affiliation_string":"Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, United Kingdom","institution_ids":["https://openalex.org/I36234482"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5057230896","display_name":"Mustapha Faqir","orcid":"https://orcid.org/0000-0002-2507-6605"},"institutions":[{"id":"https://openalex.org/I36234482","display_name":"University of Bristol","ror":"https://ror.org/0524sp257","country_code":"GB","type":"education","lineage":["https://openalex.org/I36234482"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"Mustapha Faqir","raw_affiliation_strings":["Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, United Kingdom"],"affiliations":[{"raw_affiliation_string":"Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, United Kingdom","institution_ids":["https://openalex.org/I36234482"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5011558464","display_name":"Umesh K. Mishra","orcid":"https://orcid.org/0000-0001-8084-9247"},"institutions":[{"id":"https://openalex.org/I154570441","display_name":"University of California, Santa Barbara","ror":"https://ror.org/02t274463","country_code":"US","type":"education","lineage":["https://openalex.org/I154570441"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Umesh K. Mishra","raw_affiliation_strings":["Department of Electrical & Computer Engineering, University of California, Santa Barbara CA 93106, USA"],"affiliations":[{"raw_affiliation_string":"Department of Electrical & Computer Engineering, University of California, Santa Barbara CA 93106, USA","institution_ids":["https://openalex.org/I154570441"]}]}],"institution_assertions":[],"countries_distinct_count":2,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2190,"currency":"USD","value_usd":2190,"provenance":"doaj"},"apc_paid":null,"fwci":5.376,"has_fulltext":true,"fulltext_origin":"ngrams","cited_by_count":81,"citation_normalized_percentile":{"value":0.930443,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":96,"max":97},"biblio":{"volume":"51","issue":"2","first_page":"195","last_page":"200"},"is_retracted":false,"is_paratext":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9999,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/degradation","display_name":"Degradation","score":0.45943898}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.77594787},{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.6603033},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.64988244},{"id":"https://openalex.org/C2777924906","wikidata":"https://www.wikidata.org/wiki/Q34168","display_name":"Trapping","level":2,"score":0.59780276},{"id":"https://openalex.org/C31625292","wikidata":"https://www.wikidata.org/wiki/Q215803","display_name":"Electroluminescence","level":3,"score":0.55416137},{"id":"https://openalex.org/C69357855","wikidata":"https://www.wikidata.org/wiki/Q163214","display_name":"Diffusion","level":2,"score":0.5438249},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.45943898},{"id":"https://openalex.org/C21036866","wikidata":"https://www.wikidata.org/wiki/Q181767","display_name":"Stress (linguistics)","level":2,"score":0.4370237},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.30954793},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.2843854},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.18724036},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.18581483},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.17775023},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.14343777},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.06984356},{"id":"https://openalex.org/C18903297","wikidata":"https://www.wikidata.org/wiki/Q7150","display_name":"Ecology","level":1,"score":0.0},{"id":"https://openalex.org/C41895202","wikidata":"https://www.wikidata.org/wiki/Q8162","display_name":"Linguistics","level":1,"score":0.0},{"id":"https://openalex.org/C138885662","wikidata":"https://www.wikidata.org/wiki/Q5891","display_name":"Philosophy","level":0,"score":0.0},{"id":"https://openalex.org/C86803240","wikidata":"https://www.wikidata.org/wiki/Q420","display_name":"Biology","level":0,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.microrel.2010.08.014","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_indexed_in_scopus":true,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false}],"best_oa_location":null,"sustainable_development_goals":[],"grants":[],"datasets":[],"versions":[],"referenced_works_count":21,"referenced_works":["https://openalex.org/W1665028453","https://openalex.org/W1950898365","https://openalex.org/W1982619893","https://openalex.org/W2032090818","https://openalex.org/W2034348795","https://openalex.org/W2035142014","https://openalex.org/W2038280026","https://openalex.org/W2040584532","https://openalex.org/W2050443780","https://openalex.org/W2065062179","https://openalex.org/W2093302013","https://openalex.org/W2093784581","https://openalex.org/W2103125572","https://openalex.org/W2111795236","https://openalex.org/W2114948479","https://openalex.org/W2125052023","https://openalex.org/W2125078061","https://openalex.org/W2160833768","https://openalex.org/W2161751664","https://openalex.org/W2168224221","https://openalex.org/W2313897986"],"related_works":["https://openalex.org/W940975362","https://openalex.org/W4248751768","https://openalex.org/W4205934534","https://openalex.org/W2382302308","https://openalex.org/W2150038201","https://openalex.org/W2137930185","https://openalex.org/W2060993002","https://openalex.org/W2049059605","https://openalex.org/W2038762453","https://openalex.org/W1976110942"],"abstract_inverted_index":null,"cited_by_api_url":"https://api.openalex.org/works?filter=cites:W1992131905","counts_by_year":[{"year":2024,"cited_by_count":6},{"year":2023,"cited_by_count":6},{"year":2022,"cited_by_count":3},{"year":2021,"cited_by_count":3},{"year":2020,"cited_by_count":5},{"year":2019,"cited_by_count":3},{"year":2018,"cited_by_count":7},{"year":2017,"cited_by_count":8},{"year":2016,"cited_by_count":7},{"year":2015,"cited_by_count":5},{"year":2014,"cited_by_count":4},{"year":2013,"cited_by_count":10},{"year":2012,"cited_by_count":11}],"updated_date":"2025-01-21T23:05:50.063415","created_date":"2016-06-24"}