乐胖代购免代理版

{"id":"https://openalex.org/W1971036045","doi":"https://doi.org/10.1016/j.microrel.2007.07.039","title":"Lifetime modeling of intrinsic gate oxide breakdown at high temperature","display_name":"Lifetime modeling of intrinsic gate oxide breakdown at high temperature","publication_year":2007,"publication_date":"2007-09-01","ids":{"openalex":"https://openalex.org/W1971036045","doi":"https://doi.org/10.1016/j.microrel.2007.07.039","mag":"1971036045"},"language":"en","primary_location":{"is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.microrel.2007.07.039","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false},"type":"article","type_crossref":"journal-article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5091567644","display_name":"R. Moonen","orcid":null},"institutions":[{"id":"https://openalex.org/I878454856","display_name":"Hasselt University","ror":"https://ror.org/04nbhqj75","country_code":"BE","type":"education","lineage":["https://openalex.org/I878454856"]}],"countries":["BE"],"is_corresponding":true,"raw_author_name":"R. Moonen","raw_affiliation_strings":["Institute for Materials Research, Hasselt University, Wetenschapspark 1, B-3590 Diepenbeek, Belgium","XIOS Hogeschool Limburg, Universitaire Campus, Agoralaan, Gebouw H, B-3590 Diepenbeek, Belgium"],"affiliations":[{"raw_affiliation_string":"XIOS Hogeschool Limburg, Universitaire Campus, Agoralaan, Gebouw H, B-3590 Diepenbeek, Belgium","institution_ids":[]},{"raw_affiliation_string":"Institute for Materials Research, Hasselt University, Wetenschapspark 1, B-3590 Diepenbeek, Belgium","institution_ids":["https://openalex.org/I878454856"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5089273534","display_name":"P. Vanmeerbeek","orcid":null},"institutions":[{"id":"https://openalex.org/I4210110772","display_name":"ON Semiconductor (Belgium)","ror":"https://ror.org/0212gej90","country_code":"BE","type":"company","lineage":["https://openalex.org/I100625452","https://openalex.org/I4210110772"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"P. Vanmeerbeek","raw_affiliation_strings":["AMI Semiconductor Belgium BVBA, Westerring 15, B-9700 Oudenaarde, Belgium"],"affiliations":[{"raw_affiliation_string":"AMI Semiconductor Belgium BVBA, Westerring 15, B-9700 Oudenaarde, Belgium","institution_ids":["https://openalex.org/I4210110772"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5029824546","display_name":"G. Lekens","orcid":null},"institutions":[{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"G. Lekens","raw_affiliation_strings":["IMEC vzw, Division IMOMEC, Wetenschapspark 1, B-3590 Diepenbeek, Belgium"],"affiliations":[{"raw_affiliation_string":"IMEC vzw, Division IMOMEC, Wetenschapspark 1, B-3590 Diepenbeek, Belgium","institution_ids":["https://openalex.org/I4210114974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5043327590","display_name":"W. De Ceuninck","orcid":"https://orcid.org/0000-0002-4630-5569"},"institutions":[{"id":"https://openalex.org/I878454856","display_name":"Hasselt University","ror":"https://ror.org/04nbhqj75","country_code":"BE","type":"education","lineage":["https://openalex.org/I878454856"]},{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"W. De Ceuninck","raw_affiliation_strings":["IMEC vzw, Division IMOMEC, Wetenschapspark 1, B-3590 Diepenbeek, Belgium","Institute for Materials Research, Hasselt University, Wetenschapspark 1, B-3590 Diepenbeek, Belgium"],"affiliations":[{"raw_affiliation_string":"Institute for Materials Research, Hasselt University, Wetenschapspark 1, B-3590 Diepenbeek, Belgium","institution_ids":["https://openalex.org/I878454856"]},{"raw_affiliation_string":"IMEC vzw, Division IMOMEC, Wetenschapspark 1, B-3590 Diepenbeek, Belgium","institution_ids":["https://openalex.org/I4210114974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109149924","display_name":"P. Moens","orcid":null},"institutions":[{"id":"https://openalex.org/I4210110772","display_name":"ON Semiconductor (Belgium)","ror":"https://ror.org/0212gej90","country_code":"BE","type":"company","lineage":["https://openalex.org/I100625452","https://openalex.org/I4210110772"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"P. Moens","raw_affiliation_strings":["AMI Semiconductor Belgium BVBA, Westerring 15, B-9700 Oudenaarde, Belgium"],"affiliations":[{"raw_affiliation_string":"AMI Semiconductor Belgium BVBA, Westerring 15, B-9700 Oudenaarde, Belgium","institution_ids":["https://openalex.org/I4210110772"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5047411824","display_name":"J. Boutsen","orcid":null},"institutions":[],"countries":["BE"],"is_corresponding":false,"raw_author_name":"J. Boutsen","raw_affiliation_strings":["XIOS Hogeschool Limburg, Universitaire Campus, Agoralaan, Gebouw H, B-3590 Diepenbeek, Belgium"],"affiliations":[{"raw_affiliation_string":"XIOS Hogeschool Limburg, Universitaire Campus, Agoralaan, Gebouw H, B-3590 Diepenbeek, Belgium","institution_ids":[]}]}],"institution_assertions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5091567644"],"corresponding_institution_ids":["https://openalex.org/I878454856"],"apc_list":{"value":2190,"currency":"USD","value_usd":2190,"provenance":"doaj"},"apc_paid":null,"fwci":0.579,"has_fulltext":true,"fulltext_origin":"ngrams","cited_by_count":7,"citation_normalized_percentile":{"value":0.629358,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":80,"max":81},"biblio":{"volume":"47","issue":"9-11","first_page":"1389","last_page":"1393"},"is_retracted":false,"is_paratext":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9997,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9993,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/dielectric-strength","display_name":"Dielectric strength","score":0.579339},{"id":"https://openalex.org/keywords/atmospheric-temperature-range","display_name":"Atmospheric temperature range","score":0.43511283}],"concepts":[{"id":"https://openalex.org/C152909973","wikidata":"https://www.wikidata.org/wiki/Q7804816","display_name":"Time-dependent gate oxide breakdown","level":5,"score":0.88158447},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.72307694},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.6205684},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.5799325},{"id":"https://openalex.org/C70401718","wikidata":"https://www.wikidata.org/wiki/Q343241","display_name":"Dielectric strength","level":3,"score":0.579339},{"id":"https://openalex.org/C60799052","wikidata":"https://www.wikidata.org/wiki/Q46221","display_name":"Electric field","level":2,"score":0.5675017},{"id":"https://openalex.org/C89395315","wikidata":"https://www.wikidata.org/wiki/Q181232","display_name":"Anode","level":3,"score":0.55224496},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.5181909},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.51408607},{"id":"https://openalex.org/C21036866","wikidata":"https://www.wikidata.org/wiki/Q181767","display_name":"Stress (linguistics)","level":2,"score":0.45641664},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.44596848},{"id":"https://openalex.org/C119321828","wikidata":"https://www.wikidata.org/wiki/Q1267190","display_name":"Breakdown voltage","level":3,"score":0.44551635},{"id":"https://openalex.org/C39353612","wikidata":"https://www.wikidata.org/wiki/Q5283759","display_name":"Atmospheric temperature range","level":2,"score":0.43511283},{"id":"https://openalex.org/C95121573","wikidata":"https://www.wikidata.org/wiki/Q190474","display_name":"Activation energy","level":2,"score":0.42807415},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.40633944},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.39626917},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.37591228},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.29310226},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.16758704},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.12604684},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.09099212},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.082059234},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.06292248},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.056667},{"id":"https://openalex.org/C41895202","wikidata":"https://www.wikidata.org/wiki/Q8162","display_name":"Linguistics","level":1,"score":0.0},{"id":"https://openalex.org/C138885662","wikidata":"https://www.wikidata.org/wiki/Q5891","display_name":"Philosophy","level":0,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.microrel.2007.07.039","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.85}],"grants":[],"datasets":[],"versions":[],"referenced_works_count":26,"referenced_works":["https://openalex.org/W1925913808","https://openalex.org/W1976287906","https://openalex.org/W1982373709","https://openalex.org/W1994505637","https://openalex.org/W1998001233","https://openalex.org/W2008383595","https://openalex.org/W2023858409","https://openalex.org/W2030098442","https://openalex.org/W2035802984","https://openalex.org/W2044615663","https://openalex.org/W2055508507","https://openalex.org/W2059795568","https://openalex.org/W2075697254","https://openalex.org/W2091638764","https://openalex.org/W2101031263","https://openalex.org/W2103397636","https://openalex.org/W2108898163","https://openalex.org/W2110335574","https://openalex.org/W2128100740","https://openalex.org/W2132218751","https://openalex.org/W2136455663","https://openalex.org/W2141511821","https://openalex.org/W2155684293","https://openalex.org/W2157050789","https://openalex.org/W2164412411","https://openalex.org/W4245911952"],"related_works":["https://openalex.org/W3160961382","https://openalex.org/W3107547302","https://openalex.org/W2779258936","https://openalex.org/W2546473172","https://openalex.org/W2392567938","https://openalex.org/W2373803844","https://openalex.org/W2243340867","https://openalex.org/W2210936481","https://openalex.org/W2099624314","https://openalex.org/W1199668799"],"abstract_inverted_index":null,"cited_by_api_url":"https://api.openalex.org/works?filter=cites:W1971036045","counts_by_year":[{"year":2013,"cited_by_count":4},{"year":2012,"cited_by_count":1}],"updated_date":"2024-12-06T00:54:38.889443","created_date":"2016-06-24"}