{"id":"https://openalex.org/W2050314583","doi":"https://doi.org/10.1016/j.microrel.2004.01.017","title":"Long-term reliability of Ti\u2013Pt\u2013Au metallization system for Schottky contact and first-level metallization on SiC MESFET","display_name":"Long-term reliability of Ti\u2013Pt\u2013Au metallization system for Schottky contact and first-level metallization on SiC MESFET","publication_year":2004,"publication_date":"2004-05-11","ids":{"openalex":"https://openalex.org/W2050314583","doi":"https://doi.org/10.1016/j.microrel.2004.01.017","mag":"2050314583"},"language":"en","primary_location":{"is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.microrel.2004.01.017","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false},"type":"article","type_crossref":"journal-article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5012737422","display_name":"A. Sozza","orcid":"https://orcid.org/0000-0003-1135-152X"},"institutions":[{"id":"https://openalex.org/I4210140930","display_name":"Thales (France)","ror":"https://ror.org/04emwm605","country_code":"FR","type":"company","lineage":["https://openalex.org/I4210140930"]},{"id":"https://openalex.org/I4210108802","display_name":"Gestione Sistemi per l\u2019Informatica (Italy)","ror":"https://ror.org/01gyw2394","country_code":"IT","type":"company","lineage":["https://openalex.org/I4210108802"]}],"countries":["FR","IT"],"is_corresponding":true,"raw_author_name":"A Sozza","raw_affiliation_strings":["Dipartimento di Ingegneria dell'Informazione, Via Gradedigo, 6/B, 35131 Padova, Italy","Thales Research and Technology France, Domaine de Corbeville, Orsay Cedex F-91404, France"],"affiliations":[{"raw_affiliation_string":"Thales Research and Technology France, Domaine de Corbeville, Orsay Cedex F-91404, France","institution_ids":["https://openalex.org/I4210140930"]},{"raw_affiliation_string":"Dipartimento di Ingegneria dell'Informazione, Via Gradedigo, 6/B, 35131 Padova, Italy","institution_ids":["https://openalex.org/I4210108802"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5015423378","display_name":"C. Dua","orcid":null},"institutions":[{"id":"https://openalex.org/I4210140930","display_name":"Thales (France)","ror":"https://ror.org/04emwm605","country_code":"FR","type":"company","lineage":["https://openalex.org/I4210140930"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"C Dua","raw_affiliation_strings":["Thales Research and Technology France, Domaine de Corbeville, Orsay Cedex F-91404, France"],"affiliations":[{"raw_affiliation_string":"Thales Research and Technology France, Domaine de Corbeville, Orsay Cedex F-91404, France","institution_ids":["https://openalex.org/I4210140930"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5036818508","display_name":"A. Kerlain","orcid":null},"institutions":[{"id":"https://openalex.org/I4210140930","display_name":"Thales (France)","ror":"https://ror.org/04emwm605","country_code":"FR","type":"company","lineage":["https://openalex.org/I4210140930"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"A Kerlain","raw_affiliation_strings":["Thales Research and Technology France, Domaine de Corbeville, Orsay Cedex F-91404, France"],"affiliations":[{"raw_affiliation_string":"Thales Research and Technology France, Domaine de Corbeville, Orsay Cedex F-91404, France","institution_ids":["https://openalex.org/I4210140930"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5089023279","display_name":"C. Brylinski","orcid":null},"institutions":[{"id":"https://openalex.org/I4210140930","display_name":"Thales (France)","ror":"https://ror.org/04emwm605","country_code":"FR","type":"company","lineage":["https://openalex.org/I4210140930"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"C Brylinski","raw_affiliation_strings":["Thales Research and Technology France, Domaine de Corbeville, Orsay Cedex F-91404, France"],"affiliations":[{"raw_affiliation_string":"Thales Research and Technology France, Domaine de Corbeville, Orsay Cedex F-91404, France","institution_ids":["https://openalex.org/I4210140930"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5002653396","display_name":"E. Zanoni","orcid":"https://orcid.org/0000-0001-7349-9656"},"institutions":[{"id":"https://openalex.org/I4210108802","display_name":"Gestione Sistemi per l\u2019Informatica (Italy)","ror":"https://ror.org/01gyw2394","country_code":"IT","type":"company","lineage":["https://openalex.org/I4210108802"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"E Zanoni","raw_affiliation_strings":["Dipartimento di Ingegneria dell'Informazione, Via Gradedigo, 6/B, 35131 Padova, Italy"],"affiliations":[{"raw_affiliation_string":"Dipartimento di Ingegneria dell'Informazione, Via Gradedigo, 6/B, 35131 Padova, Italy","institution_ids":["https://openalex.org/I4210108802"]}]}],"institution_assertions":[],"countries_distinct_count":2,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5012737422"],"corresponding_institution_ids":["https://openalex.org/I4210140930","https://openalex.org/I4210108802"],"apc_list":{"value":2190,"currency":"USD","value_usd":2190,"provenance":"doaj"},"apc_paid":null,"fwci":0.564,"has_fulltext":true,"fulltext_origin":"ngrams","cited_by_count":25,"citation_normalized_percentile":{"value":0.832063,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":89},"biblio":{"volume":"44","issue":"7","first_page":"1109","last_page":"1113"},"is_retracted":false,"is_paratext":false,"primary_topic":{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.9998,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.9998,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9997,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9997,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/mesfet","display_name":"MESFET","score":0.81585526},{"id":"https://openalex.org/keywords/contact-resistance","display_name":"Contact resistance","score":0.6208834},{"id":"https://openalex.org/keywords/auger-electron-spectroscopy","display_name":"Auger electron spectroscopy","score":0.605784},{"id":"https://openalex.org/keywords/degradation","display_name":"Degradation","score":0.44464296}],"concepts":[{"id":"https://openalex.org/C134123091","wikidata":"https://www.wikidata.org/wiki/Q1837339","display_name":"MESFET","level":5,"score":0.81585526},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6896333},{"id":"https://openalex.org/C123745756","wikidata":"https://www.wikidata.org/wiki/Q1665949","display_name":"Interconnection","level":2,"score":0.68263817},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.622013},{"id":"https://openalex.org/C123671423","wikidata":"https://www.wikidata.org/wiki/Q332329","display_name":"Contact resistance","level":3,"score":0.6208834},{"id":"https://openalex.org/C25442681","wikidata":"https://www.wikidata.org/wiki/Q28087","display_name":"Auger electron spectroscopy","level":2,"score":0.605784},{"id":"https://openalex.org/C77671233","wikidata":"https://www.wikidata.org/wiki/Q556046","display_name":"Secondary ion mass spectrometry","level":3,"score":0.5317698},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.52903193},{"id":"https://openalex.org/C21036866","wikidata":"https://www.wikidata.org/wiki/Q181767","display_name":"Stress (linguistics)","level":2,"score":0.49011979},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.44464296},{"id":"https://openalex.org/C16115445","wikidata":"https://www.wikidata.org/wiki/Q2391942","display_name":"Schottky barrier","level":3,"score":0.428693},{"id":"https://openalex.org/C69357855","wikidata":"https://www.wikidata.org/wiki/Q163214","display_name":"Diffusion","level":2,"score":0.4236576},{"id":"https://openalex.org/C525849907","wikidata":"https://www.wikidata.org/wiki/Q1096","display_name":"Tin","level":2,"score":0.41091418},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.34598303},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.3450622},{"id":"https://openalex.org/C145148216","wikidata":"https://www.wikidata.org/wiki/Q36496","display_name":"Ion","level":2,"score":0.28926975},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.21742707},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.20885259},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.20681626},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.20538834},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.17830527},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.10378438},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.102335215},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.087977886},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0758481},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.0},{"id":"https://openalex.org/C138885662","wikidata":"https://www.wikidata.org/wiki/Q5891","display_name":"Philosophy","level":0,"score":0.0},{"id":"https://openalex.org/C41895202","wikidata":"https://www.wikidata.org/wiki/Q8162","display_name":"Linguistics","level":1,"score":0.0},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C185544564","wikidata":"https://www.wikidata.org/wiki/Q81197","display_name":"Nuclear physics","level":1,"score":0.0},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.microrel.2004.01.017","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false}],"best_oa_location":null,"sustainable_development_goals":[],"grants":[],"datasets":[],"versions":[],"referenced_works_count":6,"referenced_works":["https://openalex.org/W1982625786","https://openalex.org/W1994956673","https://openalex.org/W2011138001","https://openalex.org/W2062754397","https://openalex.org/W2071742159","https://openalex.org/W2097241547"],"related_works":["https://openalex.org/W4200318646","https://openalex.org/W3138233985","https://openalex.org/W3117301816","https://openalex.org/W2899899469","https://openalex.org/W2605593973","https://openalex.org/W2323418717","https://openalex.org/W2193085994","https://openalex.org/W2081329720","https://openalex.org/W2019050294","https://openalex.org/W1015775940"],"abstract_inverted_index":null,"cited_by_api_url":"https://api.openalex.org/works?filter=cites:W2050314583","counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2019,"cited_by_count":2},{"year":2018,"cited_by_count":1},{"year":2017,"cited_by_count":3},{"year":2015,"cited_by_count":1},{"year":2014,"cited_by_count":3},{"year":2013,"cited_by_count":1},{"year":2012,"cited_by_count":3}],"updated_date":"2024-12-11T11:42:50.928420","created_date":"2016-06-24"}